• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.223-223
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• 1999

PZT(PbZr1-xTixO3) 박막은 고유전율과 같은 remanent polarization을 가져서 고집적 소자의 커패시터 유전율층 또는 비휘발성 메모리 소자의 제조에 이용되고 있으나, fatigue 와 aging 문제로 인하여 새로운 물질의 개발이 필요한데, 그 대표적으로 연구되고 있는 것이 PMN-PT(Pb(Mg1/3Nb2/3)O-PbTiO3) 이다. 본 실험에서는 sol-gel 법에 의하여 제조된 PMN-PT막을 ICP(Inductively coupled plasma)에 의하여 식각하였고 mask층으로는 PR을 사용하였다. 식각 가스로는 Ar, Cl, BCl를 단독 또는 혼합하여 사용하였으며, 식각 특성을 보기 위하여 RF Power, Substrate bias, Operation pressure, Substrate temperature를 변화시켰다. 식각속도는 stylus profiler를 이용하여 측정하였고, 단면 profile은 scanning electron microscopy (SEM)를 이용하여 관찰하였다. 식각 메커니즘을 규명하고자 식각된 박막의 표면을 X-ray photoelectron spectroscopy (XPS)로 관찰하였고, optical emission spectroscopy (OES)로 플라즈마 특성을 규명하고자 하였다. 식각속도는 Ar 또는 Cl2 플라즈마에 BCl3 가스를 혼합하였을 경우 증가되었고, BCl3 가스를 단독으로 사용하여도 높은 식각속도를 나타내었으며, BCl3의 첨가량이 늘어날수록 PR의 식각속도는 감소하여 높은 선택비를 보였다. 90% BCl3/10%Cl2 플라즈마에서 2800$\AA$/min의 식각속도 그리고 1.37:1의 PR 선택비를 얻을 수 있었다. Power나 기판 bias 증가에 따라 식각속도는 증가하였으나 기판 온도변화에는 민감하지 않았다. BCl3 rich에서의 식각속도 증가와 선택비 증가는 B2O3의 형성에 의한 것으로 생각된다.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.16-16
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• 2012

Mg and its alloys have been of great interest because of their low density of 1.7, 30% lighter than Al, but their wide applications have been limited because of their poor resistances against corrosion and/or abrasion. Corrosion resistance of Mg alloys can be improved by formation of anodic films using anodic oxidation method in aqueous electrolytes. Plasma electrolytic oxidation (PEO) is one of anodic oxidation methods by which hard anodic films can be formed as a result of micro-arc generation under high electric field. PEO method utilize not only substrate elements but also chemical components in electrolytes to form anodic films on Mg alloys. PEO films formed on AM50 magnesium alloy in an acidic fluozirconate electrolyte were observed to consist of mainly $ZrO_2$ and $MgF_2$. Liu et al reported that PEO coating on AM30 Mg alloy consists of $MgF_2$-rich outer porous layer and an MgO-rich dense inner layer. PEO films prepared on ACM522 Mg die-casting alloy in an aqueous phosphate solution were also reported to be composed of monoclinic $Mg_3(PO_4)_2$. $CeO_2$-incorporated PEO coatings were also reported to be formed on AZ31 Mg alloys in $CeO_2$ particle-containing $Na_2SiO_3$-based electrolytes. Magnesium tin hydroxide ($MgSn(OH)_6$) was also produced on AZ91D alloy by PEO process in stannate-containing electrolyte. Effects of $OH^-$, $F^-$, $PO{_4}^{3-}$ and $SiO{_3}^{2-}$ ions and alloying elements of Al and Sn on the formation of PEO films on pure Mg and Mg alloys and their protective properties against corrosion have been investigated in this work. $PO{_4}^{3-}$, $F^-$ and $SiO{_3}^{2-}$ ions were observed to contribute to the formation of PEO films but $OH^-$ ions were found to break down the surface films under high electric field. The effect of pulse current on the formation of PEO films will be also reported.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.112-114
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• 1999

Superconducting multiplexer consisting of hairpin type filters has been designed for the reduction of the physical size of the device. Pulsed laser deposition with a Nd:YAG laser has been used to grow high quality YBCO superconducting films on MgO substrates. Multiplexer has been designed to have the center frequencies at 13.6 CHz and 13.9 GHz on MgO substrate with the size of 20 ${\times}$ 20 ${\times}$ 0.5mm$^3$. It is possible to implement superconducting multiplexer having two passbands on the limited 20 ${\times}$ 20 ${\times}$ 0.5mm$^3$ MgO substrate by adopting hairpin type filters. This type of superconducting device will be useful for the integration of microwave subsystem.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.358-361
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• 1999

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

• The Korean Journal of Mycology
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• v.24 no.3 s.78
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• pp.223-227
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• 1996

The effects of addition of dried apple pomace to sawdust substrate on the growth of Flammulina velutipes were investigated during the period of 2 years $(1994{\sim}1995)$. Dried apple pomace used in this study consisted of 44.6% C, 0.54% N, 0.16% CaO, 0.16% $P_2O_5$, 0.11% MgO and 1.29% $K_2O$ (pH 4.4). The addition of 15% apple pomace (v/v) increased the yield of the mushroom fruitbody by 9%, and period of primordia formation was similar regardless of the treatments. In economical analysis, the addition of 15% apple pomace (v/v) increased 29% compared to the control treatment in relative income.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.251-254
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• 2001

This paper describes an efficiency improvement of buried contact solar cell (BSCS) with a structure of MgF$_2$/CeO$_2$/Ag/Cu/Ni grid/n$^{+}$ emitter/p-type Si base/p$^{+}$/Al. Theoretical and experimental investigations were performed on a double layer antireflection (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. An optimized DLAR coating shewed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 ${\mu}{\textrm}{m}$ to 1.1 ${\mu}{\textrm}{m}$. BCSC cell efficiency was improved from 16.2 % without any AR coating to 19.9 % by employing DLAR coatings. Further details on MgF$_2$/CeO$_2$ DLAR coatings on the BCSC cells are presented in this paper.per.

• Microbiology and Biotechnology Letters
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• v.8 no.3
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• pp.199-206
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• 1980

Some experiments on the citric acid production were carried out from soluble starch and molasses as raw materials. When soluble starch was used as substrate for the fermentation of citric acid by the strain M-80 which had assimilating ability of soluble starch in surface culture, the optimal culture media was 120g of soluble starch, 3.0g of (N $H_4$)$_2$S $O_4$, 2.0g of K $H_2$P $O_4$, 0.2g of MgS $O_4$.7$H_2O$, 1.5mg of F $e^{++}$, 1mg of Z $n^{++}$ and 20ml of methanol were added to 1 liter and optimal pH was 5.5. In about 8 days 61.8mg/ml of citric acid was produced. When treated molasses with potassium ferrocyanide was used as substrate for the fermentation of citric acid by the strain of M-315, the optimal condition in surface culture was 250g of molasses, 0.3g of N $H_4$N $O_3$, 0.05g of K $H_2$P $O_4$, 0.01g of MgS $O_4$.7$H_2O$, 0.5g of Potassium ferrocyanide and 30ml of methanol were added to 1.0 liter. On the other hand, the optimal condition in submersed culture was 250g of molasses, 0.3g of N $H_4$N $O_3$, 0.1g of K $H_2$P $O_4$, 0.01g of MgS $O_4$.7$H_2O$, 0.5g of potassium ferrocyanide, and 30m1 of methanol were added to 1.0 liter and optimal pH was all 5.0. After 9 days culture, 69.4mg/ ml, 39.6mg/ml of citric acid were separately produced in surface and submerged culture media.dia.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.