• 제목/요약/키워드: MgO sol-gel

Search Result 71, Processing Time 0.027 seconds

Microwave Dielectric Properties of $Mg_4Nb_2O_9$ Ceramics Produced by a Sol-gel Route (솔-젤법에 의해 제조한 $Mg_4Nb_2O_9$ 세라믹스의 마이크로파 유전특성)

  • Lim, Sung-Woo;Lee, Sang-Wook;Bang, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.281-282
    • /
    • 2007
  • $Mg_4Nb_2O_9$ (MN) ceramics have been prepared by a sol-gel method. The powder characteristics, phase evolution, and microwave dielectric properties of the MN were investigated in various processing conditions such as sol-gel compositions, calcination, and sintering temperatures. A Qxfo value of 111,717 GHz with a ${\varepsilon}_r$ of 10.59 and a ${\tau}_f$ of $+1.736\;ppm/^{\circ}C$ was obtained after sintering at $1300^{\circ}C$ for 5 h.

  • PDF

Surface treatment of Mg Alloy plate using organic monolayer (유기 단분자막을 이용한 마그네슘 판재 표면처리)

  • Park, Yeong-Hui;Lee, Gyeong-Hwang;Jeong, Jae-In;Yang, Ji-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2007.11a
    • /
    • pp.36-36
    • /
    • 2007
  • AZ31 Mg alloy plate 표면에 대기압 플라즈마 처리, MgO 코팅, 유기단분자막 형성, sol-gel 코팅등의 표면 처리를 한 후 내식성의 변화를 조사하였다. 대기압 플라즈마는 O2, Ar 개스를 사용하여 처리하였고, MgO 코팅은 sputter를 사용하였으며, 유기 단분자막으로는 Octadecyltrimethoxy silane을 기상유기박막 코팅하였으며, sol-gel 코팅은 dipping 방법을 이용하여 샘플을 제작하였다. 마그네슘 판재는 buffing 공정으로 표면 처리된 것을 사용하였으며, 아세톤 및 에탄올을 이용하여 초음파 세척하여 사용하였다. 표면처리된 시험편을 염수분무법으로 내식성을 평가하였으며, sol-gel 코팅 층의 젖음성 특성 및 xps를 이용하여 내식 특성에 미치는 표면 효과를 분석하였다.

  • PDF

The Effect of Mg Precursors on Optical and Structural Characteristics of Sol-Gel Processed Mg0.3Zn0.7O Thin Films (졸-겔법으로 성장시킨 Mg0.3Zn0.7O 박막의 Mg 전구체의 종류에 따른 광학적·구조적 특성에 관한 연구)

  • Yeom, Ahram;Kim, Hong Seung;Jang, Nak Won;Yun, Young;Ahn, Hyung Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.33 no.3
    • /
    • pp.214-218
    • /
    • 2020
  • In this study, MgxZn1-xO thin films, which can be applied not only to active layers of light-emitting devices (LEDs), such as UV-LEDs, but also to solar cells, high mobility field-effect transistors, and power semiconductor devices, are fabricated using the sol-gel method. ZnO and Mg0.3Zn0.7O solution synthesized by the sol-gel method and the thin film were grown by spin coating on a Si (100) substrate and sapphire substrate. The solutions are synthesized by dissolving precursor materials in 2-methoxyethanol (2-ME) solvent, and then monoethanolamine (MEA) was added to the mixed solution as a sol stabilizer. Zinc acetate dihydrate is used as a ZnO precursor, while Mg nitrate hexahydrate and Mg acetate tetrahydrate are used as an MgO precursor. Then, the optical and structural characteristics of the fabricated thin films are compared. The molar concentration of the Zn precursor in the solvent is fixed at 0.3 M, and the amount of the Mg precursor is 30% of Mg2+/Zn2+. The optical characteristics are measured using an UV-vis spectrophotometer, and the transmittance of each wavelength is measured. Structural characteristics are measured using X-ray diffraction (XRD) and transmission electron microscopy (TEM). Composition analyses are performed using energy dispersive X-ray spectroscopy (EDS). The Mg0.3Zn0.7O thin film was well formed at the ratio of the Mg precursor added regardless of the type of Mg precursor, and the c-axis of the thin film was decreased, while the band gap was increased to 3.56 eV.

Growth of magnesium oxide nanoparticles onto graphene oxide nanosheets by sol-gel process

  • Lee, Ju Ran;Koo, Hye Young
    • Carbon letters
    • /
    • v.14 no.4
    • /
    • pp.206-209
    • /
    • 2013
  • Nanocomposites comprised of graphene oxide (GO) nanosheets and magnesium oxide (MgO) nanoparticles were synthesized by a sol-gel process. The synthesized samples were studied by X-ray powder diffraction, atomic force microscopy, transmission electron microscopy, and energy-dispersive X-ray analysis. The results show that the MgO nanoparticles, with an average diameter of 70 nm, are decorated uniformly on the surface of the GOs. By controlling the concentration of the MgO precursors and reaction cycles, it was possible to control the loading density and the size of the resulting MgO particles. Because the MgO particles are robustly anchored on the GO structure, the MgO/GOs nanocomposites will have future applications in the fields of adsorption and chemical sensing.

Spectroscopic and Microstructural Analysis of Phase Transformation of Mg-PSZ/$Al_2O_3$ Fibers Prepared by Sol-Gel Method

  • Eun, Hee-Tai;Whang, Chin-Myung
    • The Korean Journal of Ceramics
    • /
    • v.2 no.2
    • /
    • pp.102-110
    • /
    • 1996
  • The Mg-PSZ/$Al_2O_3$ fibers were fabricated by the sol-gel method. The added $Al_2O_3$ amounts were varied from 5 to 20 mol%. The phase transformation studies of a drawn Mg-PSZ/$Al_2O_3$ fibers were investigated by use of X-ray diffraction, IR and Raman spectroscopy. Microstructure and tensile strength of fibers were subjected to scanning electron microscopy and tensile strength tester. When $Al_2O_3$ was added to the Mg-PSZ fibers, it was found out from the analysis of XRD patterns and Raman spectra that a small amount of crystalline spinel($MgAl_2O_4$) started to form due to the reaction between $Al_2O_3$ and MgO, at $1000^{\circ}C$, and the phase transformation temperature of $ZrO_2$ crystal phase at different sintering temperatures increased. Also, the rapid grain growth with average size of 2.0 ${\mu}m$ shown in Mg-PSZ fiber at $1500^{\circ}C$ was considerably suppressed to 0.39 ${\mu}m$ by adding $Al_2O_3$ at the same temperature. When the Mg-PSZ/$Al_2O_3$ fibers containing 5 mol% $Al_2O_3$ were sintered $800^{\circ}C$ for 1 hr, average tensile strength of fibers was 0.9 GPs at diameters of 20 to 30 ${\mu}m$, but as the sintering temperatures was increased to $1000^{\circ}C$ for 1 hr, average tensile strength of fibers increased to 1.2 GPa in the same diameter range.

  • PDF

Dielectric properties of (100)-oriented $Ba_{0.6}Sr_{0.4}TiO_3$ Thin Films grown on MgO (100) thin films for phase-shifters (Phase-shifters 응용을 위한 MgO 박막위에 성장된 BST(100) 박막의 유전적 특성)

  • Lee, Byeong-Ki;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.07b
    • /
    • pp.663-666
    • /
    • 2004
  • In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

  • PDF