• Title/Summary/Keyword: MgO protective layer

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Influence of gas mixture ratio on the secondary electron emission coefficient ($\gamma$) fo MgO single crystals and MgO protective layer in AC PDP

  • Lim, Jae-Yong;Jung, J.M.;Choi, M.C.;Ahn, J.C.;Cho, T.S.;Kim, T.Y.;Kim, S.S.;Jung, M.W.;Choi, S.H.;Kim, S.B.;Ko, J.J.;Kim, D.I.;Lee, C.W.;Seo, Y.;Cho, G.S.;Kang, S.O.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.145-147
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    • 2000
  • The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

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The Analysis of the Discharging Characteristics and MgO protective layer by MgO Evaporation Rates for High-Efficiency PDP (MgO 증착률에 따른 PDP 보호막 물성 및 방전 특성 분석)

  • Kim, Yong-Jae;Kwon, Sang-Jik
    • Journal of the Korean Vacuum Society
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    • v.16 no.3
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    • pp.181-186
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    • 2007
  • We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at $5{\AA}/sec$, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than $5{\AA}/sec$, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.

Discharge characteristics of MgO-PDP manufactured by using "all-in-vacuum" process

  • Yano, T.;Uchida, G.;Uchida, K.;Awaji, N.;Shinoda, T.;Kajiyama, H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.28-30
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    • 2009
  • PDP panels with MgO protective layer are manufactured by using the "all-in-vacuum" process we have established [1]. This is the process aiming to keep the MgO surface as clean as possible after the evaporation. The panels are evaluated in term of discharge voltage, aging time, luminance, luminous efficacy, discharge time-lag. It is confirmed that the "all-in-vacuum" process particularly improves the aging time, discharge voltage and the discharge time-lag.

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Preparation of MgO Protective Layer for AC PDP by Unbalanced Magnetron Sputtering (불평형 마그네트론 스파터링에 의한 AC PDP의 MgO 보호층 형성에 관한 연구)

  • Ko, Kwang-Sic;Kim, Young-Kee;Park, Jung-Tae;Kim, Eun-Chin;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.142-145
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

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Process TAC Time Reduction Technology for Improving the Efficiency and Throughput of the PDP (PDP 효율 및 생산성 향상을 위한 공정단순화 기술)

  • Kwon, Sang Jik
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.45-50
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    • 2013
  • This paper focuses on the fundamental issues for improving the efficiency and throughput of the AC PDP (Plasma Display Panel) manufacturing. The properties of the MgO protective layer affect the PDP efficiency. Especially, the secondary electron emission efficiency was affected on the deposition rate of MgO during the evaporation. In this study, the deposition rate of 5 $\AA$/s has given the maximum efficiency value of 0.05 It is demonstrated that the impurity gases such as $H_2O$, $CO_2$, CO or $N_2$, and $O_2$ can be remained inside the PDP panel before sealing and the amount of the impurity gases decreased rapidly as the base vacuum level increased, especially near $10^{-5}$ torr. The fundamental solution in order to overcome these problems is the vacuum in-line sealing process from the MgO evaporation to the final sealing of the panel without breaking the vacuum. We have demonstrated this fundamental process technology and shown the feasibility. The firing voltage was reduced down to 285 V at the base vacuum value of $10^{-6}$ torr, whreras it was about 328 V at the base vacuum value of $10^{-3}$ torr.

Effects of Cooling Rates of Coating Layer on Microstructures and Corrosion Behaviors of Zn-Al-Mg Alloy Coated Steel Sheets (Zn-Al-Mg 합금도금강판의 도금 층 냉각속도 제어에 따른 미세조직 및 부식거동 분석)

  • Lee, Jae-Won;Kim, Sung Jin
    • Corrosion Science and Technology
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    • v.21 no.3
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    • pp.221-229
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    • 2022
  • To understand effects of cooling rates of coating layer on microstructures and corrosion behaviors of hot-dip alloy coated steel sheets (Zn-5%Al-2%Mg) in a neutral aqueous condition with chloride ion, a range of experimental and analytical methods were used in this study. Results showed that a faster cooling rate during solidification decreased the fraction of primary Zn, and increased the fraction of Zn-Al phase. In addition, interlamellar spacing became refined under a faster cooling rate. These modifications of the coating structure had higher open circuit potentials (OCP) with smaller anodic and cathodic current densities in the electrochemical potentiodynamic polarization. Surface analyses after a salt spray test showed that the increase in the Zn-Al phase in the coating formed under a faster cooling rate might have contributed to the formation of simonkolleite (Zn5(OH)8Cl2·H2O) and hydrotalcite (ZnAl2(OH)6Cl2·H2O) with a protective nature on the corroded outer surface, thus delaying the formation of red rust.

Preparation of Novel Magnesium Precursors and MgO Thin Films Growth by Atomic Layer Deposition (ALD)

  • Kim, Hyo-Suk;park, Bo Keun;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.364.2-364.2
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    • 2014
  • Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

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Influence of surface geometrical structures on the secondary electron emission coefficient $({\gamma})$ of MgO protective layer

  • Park, W.B.;Lim, J.Y.;Oh, J.S.;Jeong, H.S.;Jeong, J.C.;Kim, S.B.;Cho, I.R.;Cho, J.W.;Kang, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.806-809
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    • 2003
  • Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

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Thick Film Type duster in Mg2SiO4/Glass composite ceramics for Anion Generation (Mg2SiO4/Glass Composite계 세라믹스를 이용한 음이온 발생용 후막형 클러스터)

  • Yeo, Dong-Hun;Shin, Hyo-Soon;Hong, Youn-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.2
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    • pp.118-123
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    • 2010
  • The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.