• 제목/요약/키워드: MgO layer

검색결과 593건 처리시간 0.024초

Cu 기판위에 성장한 MgO, $MgAl_2O_4$$MgAl_2O_4/MgO$ 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정 (Sputtering Yield and Secondary Electron Emission Coefficient(${\gamma}$) of the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ Thin Film Grown on the Cu Substrate by Using the Focused Ion Beam)

  • 정강원;이혜정;정원희;오현주;박철우;최은하;서윤호;강승언
    • 한국진공학회지
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    • 제15권4호
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    • pp.395-403
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    • 2006
  • [ $MgAl_2O_4$ ] 막은 MgO 보호막 보다 단단하며 수분 흡착 오염 문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP 의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 $MgAl_2O_4/MgO$ 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO 와 $MgAl_2O_4$을 각각 $1000\AA$ 두께로 증착, $MgAl_2O_4/MgO$$200/800\AA$ 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al 을 $1000\AA$ 두께로 증착하였다. 집속 이온빔 (focused ion beam: FIB) 장치를 이용하여 10 kV 에서 14 kV 까지 이온빔 에너지에 따라 MgO는 $0.364{\sim}0.449$ 값의 스퍼터링 수율에서 $MgAl_2O_4/MgO$ 을 적층함으로 $24{\sim}30 %$ 낮아진 $0.244{\sim}0.357$ 값의 스퍼터링 수율이 측정되었으며, $MgAl_2O_4$는 가장 낮은 $0.088{\sim}0.109$ 값의 스퍼터링 수율이 측정되었다. g-집속이온빔 (g-FIB) 장치를 이용하여 $Ne^+$ 이온 에너지를 50 V 에서 200 V 까지 변화시켜 $MgAl_2O_4/MgO$ 와 MgO 는 $0.09{\sim}0.12$의 비슷한 이차 전자방출 계수를 측정하였다. AC- PDP 셀의 72 시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 $MgAl_2O_4/MgO$의 적층보호막의 열화특성을 살펴보았다.

반응성 스퍼트링에 의한 MgO 유전체 보호층 형성에 관한 연구 (Preparation of MgO Protective layer by reactive magnetron Sputtering)

  • 하홍주;이우근;류재하;송용;조정수;박정후
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.59-62
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    • 1996
  • Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

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AlZnMg-합금의 용융산화에 의한 $Al_2O_3$-복합재료의 형성 (Formation of $Al_2O_3$-Composites by the Melt Oxidation of an AlZnMg-alloy)

  • 김일수;김상호;강정윤
    • 한국세라믹학회지
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    • 제33권9호
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    • pp.985-994
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    • 1996
  • The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

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TiO2 씨앗층을 이용한 다양한 기판에서의 Co/Pd 층의 수직 자기 이방성에 대한 연구 (Perpendicular Magnetic Anisotropy in Co/Pd Layer with TiO2 Seed Layer on the Various Substrates)

  • 강물빛;윤정범;이정섭;유천열
    • 한국자기학회지
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    • 제23권1호
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    • pp.7-11
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    • 2013
  • 본 연구에서는 $TiO_2$/Co/Pd 구조의 다층박막을 마그네트론 스퍼터링으로 GaAs(100), MgO(100), MgO(111), Si(100), glass와 같은 다양한 종류의 기판에 대해 제작하여 수직 자기 이방성에 대해서 연구하였다. 산소 분압 등의 $TiO_2$ 층의 증착 조건과 기판의 종류에 따른 Co/Pd 층의 수직 자기 이방성을 측정하였다. 그 결과, $TiO_2$ 층이 5 nm 이하 일 때는 기판의 종류에 영향을 받지만, 그 이상의 두께에 대해서는 MgO(111)을 제외한 기판의 영향이 크지 않음을 확인하였고, 이는 $TiO_2$ 씨앗층의 성장조건과 계면의 거칠기, 결정방향 등과 관련이 있음을 발견하였다.

Molecular Dynamics and Quantum Chemical Molecular Dynamics Simulations for the Design of MgO Protecting Layer in Plasma Display Panel

  • Kubo, Momoji;Serizawa, Kazumi;Kikuchi, Hiromi;Suzuki, Ai;Koyama, Michihisa;Tsuboi, Hideyuki;Hatakeyama, Nozomu;Endou, Akira;Takaba, Hiromitsu;Kajiyama, Hiroshi;Shinoda, Tsutae;Miyamoto, Akira
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1049-1052
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    • 2008
  • We developed novel molecular dynamics and quantum chemical molecular dynamics simulators for the design of MgO protecting layer in plasma display panel. These simulators were applied to the investigations on the destruction processes of the MgO protecting layer as well as the evaluation of its second electron emission ability. From the simulation results, we successfully proposed new guidelines for MgO protecting layer with high durability and high second electron emission ability.

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무기 박막형 보호층을 이용한 고분자 유기발광 다이오드의 특성 평가 (Characterization of the Polymer-based Organic Light Emitting Diode having Inorganic Thin Film Passivation Layer)

  • 김훈;김광호;김재경;이윤희;한정인;도이미;주병권
    • 한국전기전자재료학회논문지
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    • 제16권1호
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    • pp.60-64
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    • 2003
  • In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.

Influence of Silicon and Seed Particles on the Reconstruction Characteristics and Exaggerated Grain Growth of MgO Protective Layer by Over-Frequency Accelerated Discharge in ACPDPs

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Choi, Jong-Kwon;Park, Kyu-Ho;Han, Sung-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.957-960
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    • 2008
  • The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

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AC-PDP에서 지속방전으로 재형성 된 MgO 나노 입자의 음극선 분광 분석

  • 이경애;최준호;김용희;손창길;최은하
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.109-109
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    • 2010
  • 최근 AC-PDP에서 MgO Protective Layer 위에 별도의 기능막(Functional Layer)을 사용하고 있는데, 이 기능막인 MgO 나노 입자는 장시간 구동시 AC_PDP panel내에서 plasma 방전에 의하여 MgO Protective Layer와 기능막이 방전 공간에 형성 된 이온에 의해 Sputtering 또는 재 증착 될 수 있다. 본 실험에서는 조성이 다른 기능막이 적용된 AC-PDP Test panel을 제작하여 장시간 구동 후 기능막인 두 가지 다른 MgO 나노 입자의 재형성된 형태를 주사 전자 현미경(Scanning Electron Microscope)을 통해 Surface Profile 및 구조의 변화를 분석하고, 또한 음극선 분광 분석(Cathodoluminascence)을 통하여 방전 영역과 비방전 영역의 delay time, 방전전압 및 효율 등의 전기 광학적 특성과의 관계를 분석하고자 한다.

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플라즈마 디스플레이 보호막으로 사용되는 마그네슘 산화막(MgO)의 내식각 특성 (The characteristics of anti-erosion for MgO protecting layer in plasma display panel)

  • 최훈영;이석현
    • 한국전기전자재료학회논문지
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    • 제13권2호
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    • pp.163-169
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    • 2000
  • In this paper, we showed the erosion characteristic of MgO protector layer releated to lifetime of plasma display panel(PDP). We observed MgO erosion characteristic as a functions of deposition conditions, pressure and distance between electrodes. In RIE condition of Xe gas, the lowest erosion rate appears in the conditions of no heating bias voltage -30V and pressure 5mtorr. In general, as deposition rate increases, erosion rate decreases. In real panel, when the gap distance between electrodes is narrow and the pressure is low, the heavy plasma damage appears. Also, the surfaces between electrodes and on the bus electrode are extremely damaged.

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Discharge characteristics of MgO layer prepared via aqueous solution process

  • Choi, Hak-Nyun;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.379-382
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    • 2006
  • In this study, an attempt was made to form magnesium oxide layer via aqueous solution route of salt precipitation process. A layer with flake morphology was formed from the process and various dopants were added during the forming process. The films formed were characterized using SEM, XRD, and cathodoluminescence measurement. In addition, the discharge characteristics were evaluated using panel tests. The results indicate that MgO film can be formed via the aqueous solution process successfully, of which characteristics are comparable to those of MgO film formed by e-beam evaporation process.

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