• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.59-62
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• 1996

Plasma displays (PDP) as a large area wall-hanging display device are rabidly developed with flat CRT, TPT LCD and etc. Especially, AC Plasma Display Panels(AC PDPs) have the inherent memory function which is effective for large area displays. The memory function in AC PDPs is caused by the accumulation of the electrical charge on the protecting layer formed on the dielectric layer. This MgO protective layer prevents the dielectric layer from sputtering by ion in discharge plasma and also has the additional important roll in lowering the firing voltage due to the large secondary electron emission coefficient). Until now, the MgO Protective layer is mainly formed by E-Beam evaporation. With increasing the panel size, this process is difficult to attain cost reduction, and are not suitable for large quantity of production. To the contrary, the methode of shuttering are easy to apply on mass production and to enlarge the size of the panel and shows the superior adhesion and uniformity of thin film. In this study, we have prepared MgO protective layer on AC PDP Cell by reactive magnetron sputtering and studied the effect of MgO layer on the surface discharge characteristics of ac PDP.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1049-1052
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• 2008

We developed novel molecular dynamics and quantum chemical molecular dynamics simulators for the design of MgO protecting layer in plasma display panel. These simulators were applied to the investigations on the destruction processes of the MgO protecting layer as well as the evaluation of its second electron emission ability. From the simulation results, we successfully proposed new guidelines for MgO protecting layer with high durability and high second electron emission ability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.60-64
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• 2003

In this study, the inorganic thin-film passivation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam evaporation system, the various kinds of inorganic thin-films were deposited onto the organic layer and their interface properties between organic and inorganic layer were investigated. In this investigation, the MgO layer showed the most suitable properties, and based on this result, the time dependent emission properties were estimated for the OLED with and without passivation layer. In this experiment, we can see that the time-dependent emission properties of MgO passivated OLED had longer life-time compared to non-passivated OLED. Therefore, we can consider that the MgO thin film is one of the most suitable candidates for the thin-film passivation layer of OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.957-960
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• 2008

The influences of silicon and MgO seed particle on the reconstruction characteristics of MgO protective layer were investigated to clarify the mechanism of reconstruction and exaggerated grain growth (EGG) in AC-PDP. The reconstruction and EGG are closely correlated with the driving force for nucleation and growth, interface energy and initial size distribution of MgO protective layer in plasma space during discharge in AC-PDP.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.109-109
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• 2010

최근 AC-PDP에서 MgO Protective Layer 위에 별도의 기능막(Functional Layer)을 사용하고 있는데, 이 기능막인 MgO 나노 입자는 장시간 구동시 AC_PDP panel내에서 plasma 방전에 의하여 MgO Protective Layer와 기능막이 방전 공간에 형성 된 이온에 의해 Sputtering 또는 재 증착 될 수 있다. 본 실험에서는 조성이 다른 기능막이 적용된 AC-PDP Test panel을 제작하여 장시간 구동 후 기능막인 두 가지 다른 MgO 나노 입자의 재형성된 형태를 주사 전자 현미경(Scanning Electron Microscope)을 통해 Surface Profile 및 구조의 변화를 분석하고, 또한 음극선 분광 분석(Cathodoluminascence)을 통하여 방전 영역과 비방전 영역의 delay time, 방전전압 및 효율 등의 전기 광학적 특성과의 관계를 분석하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.163-169
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• 2000

In this paper, we showed the erosion characteristic of MgO protector layer releated to lifetime of plasma display panel(PDP). We observed MgO erosion characteristic as a functions of deposition conditions, pressure and distance between electrodes. In RIE condition of Xe gas, the lowest erosion rate appears in the conditions of no heating bias voltage -30V and pressure 5mtorr. In general, as deposition rate increases, erosion rate decreases. In real panel, when the gap distance between electrodes is narrow and the pressure is low, the heavy plasma damage appears. Also, the surfaces between electrodes and on the bus electrode are extremely damaged.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.379-382
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• 2006

In this study, an attempt was made to form magnesium oxide layer via aqueous solution route of salt precipitation process. A layer with flake morphology was formed from the process and various dopants were added during the forming process. The films formed were characterized using SEM, XRD, and cathodoluminescence measurement. In addition, the discharge characteristics were evaluated using panel tests. The results indicate that MgO film can be formed via the aqueous solution process successfully, of which characteristics are comparable to those of MgO film formed by e-beam evaporation process.