• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05a
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• pp.199-206
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• 1997

For the Korean Next Generation Reactor(KNGR) development, LBB is considered for the Main Steam Line(MSL) piping inside its containment to achieve cost and safety Improvement. To apply LBB concept to MSL, leak sensors highly sensitive to humidity is required. In this paper, a ceramic material, MgCr$_2$O$_4$-TiO$_2$ has been developed as a humidity sensor for MSL applications. Experiments peformed to characterize the electrical conductivity shows that the conductivity of MgCr$_2$O$_4$-TiO$_2$ responds sensitively to both temperature and humidity changes. At a constant temperature below 10$0^{\circ}C$, the conductivity increases as the relative humidity increases, which makes the sensor favorable for application to the outside of MSL insulation layer But as temperature increases beyond 10$0^{\circ}C$, the sensor composition should be adjusted for the application to KNGR is to be made at temperature above 10$0^{\circ}C$.

• Journal of Korea Foundry Society
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• v.19 no.5
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• pp.419-426
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• 1999

Hardening behavior and metal-mold reaction of phosphate bonded investments for titanium and titanium alloys were investigated. Alumina and $Y_2O_3-stabilized$ zirconia, which are thermodynamically more stable than Titania, were used as major filler materials. $NH_4H_2PO_4$ was used as binder, and MgO was used as hardening acceleration material. A different composition ratio of binder and hardening acceleration material had effected on general hardening behavior and castings. And adding $YO_3-stabilized$ zirconia to alumina, metal-mold reaction characteristics for castings was evaluated. Considering working conditions and effects on castings, the best composition ratio conditions were both 10:10 and 12:8($NH_4H_2PO_4vs.\;MgO$). On the other hand, increasing the contents of $Y_2O_3-stabilized$ zirconia for filler material, metal-mold reaction layer of titanium castings was greatly decreased.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.366-370
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• 2007

Silicon nitride ($Si_3N_4$) ceramics have been considered for various components of nuclear power plants such as the mechanical seal of a reactor coolant pump (RCP), the guide roller for a control rod drive mechanism (CRDM), and a seal support, etc. Corrosion behavior of $Si_3N_4$ ceramics in a high-temperature and high-pressure water must be elucidated before they can be considered as components for nuclear power plants. In this study, the corrosion behaviors of $Si_3N_4$ ceramics containing MgO and $Al_2O_3$ as sintering aids were investigated at a hydrothermal condition ($300^{\circ}C$, 9.0 MPa) in pure water and 35 ppm LiOH solution. The corrosion reactions were controlled by a diffusion of the reactive species and/or products through the corroded layer. The grain-boundary phase was preferentially corroded in pure water whereas the $Si_3N_4$ grain seemed to be corroded at a similar rate to the grain-boundary phase in LiOH solution. Flexural strengths of the $Si_3N_4$ ceramics were significantly degraded due to the corrosion reaction. Results of this study imply that a variation of the sintering aids and/or a control (e.g., crystallization) of the grain-boundary phase are necessary to increase the corrosion resistance of $Si_3N_4$ ceramics in a high-temperature water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2001.10a
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• pp.292-300
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• 2001

The paper describes spectroscopic characteristics of plasma induces in the pulsed YAG laser welding of alloys containing a large amount of volatile elements. The authors have conducted the spectroscopic analyses of laser induced Al-Mg alloys plasma in the air and argon atmosphere. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg lines, as well as the intense molecular spectra of A10 and Mg0 formed by chemical reactions of evaporated Al and Mg atoms from the pool surface with oxygen in the air. In argon atmosphere, Mg0 and AI0 spectra vanished, but AIH spectrum was detected. The hydrogen source was presumably hydrogen dissolved in the base metals, water absorbed on the surface oxide layer, or $H_2$ and $H_2O$ in the shielding gas. The resonant 1ines of Al and Mg were strongly self-absorbed, in particular, self-absorption of the Mg 1ine was predominant. These results show that the laser induced plasma was made of metal1ic vapor with relatively low temperature and high density.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1480-1483
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• 2005

Transparent thin composite films (TCFs) were deposited on OLED devices by means of RF sputtering method and their passivation-properties were evaluated by comparing to the e-beam evaporating method. This composite film formed by mixed ratio of MgO (3wt %): $SiO_2$ (1wt %) was developed from pallet as a source of e-beam evaporator to 6-inch size target for sputtering in order to apply for large-sized organic display devices. Water Vapor Transmission Rates (WVTR) of the deposited films were measured as a function of thickness to assess the effectiveness of this film as a passivation layer and it applied to real devices. From this study, we can confirm that the passivation layer formed by TCFs using RF sputtering method sufficiently shows the potentiality of application to passivation layer for organic display devices.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.606-615
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• 1990

The purity of CeO$_2$, Sm$_2$O$^{3+}$ and La2O$^{3+}$ have been determinated by separating the impurity of rare earth-elements in those oxides with anion exchange resin and measuring the absorbance of the separated element with MTB. 1 ml of the mixture solution containing each 1 mg/ml of Y$^{3+}$, Yb$^{3+}$, Eu$^{3+}$, Sm$^{3+}$, Nd$^{3+}$, Pr$^{3+}$, Ce$^{4+}$and La$^{3+}$ is loaded in top layer of anion exchange resin column, Amberlite CG400 and separated with the mixture solution of the various concentration of methyl alcohol and nitric acid as an eluent. Using the result, the impure rare earth elements in pure CeO$_2$, Sm$_2$O$^{3+}$ and La$_2$O$^{3+}$ are determinated.

• Korean Journal of Materials Research
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• v.26 no.10
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• pp.513-520
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• 2016

The effect of NaOH concentration on the properties of electrolytic plasma processing (EPP) coating formed on AZ61A Mg alloy is studied. Various types of EPP were employed on magnesium alloy AZ61A in a silicate bath with different concentrations of NaOH additive. Analysis of the composition and structure of the coating layers was carried out using an X-ray diffractometer (XRD) and a scanning electron microscope (SEM). The results showed that the oxide coating layer mainly consisted of MgO and $Mg_2SiO_4$; its porosity and thickness were highly dependent on the NaOH concentration. The Vickers hardness was over 900 HV for all the coatings. The oxide layer with 3 g/l of NaOH concentration exhibited the highest hardness value (1220 HV) and the lowest wear rate. Potentiodynamic testing of the 3 g/l NaOH concentration showed that this concentration had the highest corrosion resistance value of $2.04{\times}10^5{\Omega}cm^2$; however, the corrosion current density value of $5.80{\times}10^{-7}A/cm^2$ was the lowest such value.