• Progress in Superconductivity
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• 제8권2호
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• pp.127-131
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• 2007

We have measured the Hall conductivity (${\sigma}_{xy}$) of c-axis-oriented $MgB_2$ thin films as functions of temperatures and magnetic fields. We found that the Hall conductivity (${\sigma}_{xy}$) is expressed by the sum of two terms, ${\sigma}_{xy}=C_l/H+C_3H$, where the coefficient $C_1\;and\;C_3$ are independent of the magnetic fields and have positive values. The coefficient $C_1$ is strongly dependent on the temperature, while the $C_3$ is weakly dependent on the temperature. We have obtained that the $C_1$ is proportional to $(1- T/T_c)^n$ with n = 4.2, which is consistent with the data observed in $La_{2-x}Sr_xCuO_4$ superconductors with low anisotropy ratio.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.151-151
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• 2002

• 한국초전도ㆍ저온공학회논문지
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• 제7권1호
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• pp.13-16
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• 2005

High temperature superconductor, $\YBa_2Cu_3O_{7-x}$ (YBCO) and ferroelectric, $\Ba_{0.1}Sr_{0.9}TiO_{3}$ (BST) multilayer thin films were deposited using on MgO(100) substrates pulsed laser deposition. The thin films exhibited only (001) peaks of YBCO and 1357 The HTS thin films demonstrated excellent zero resistance temperature of 92.5 K. We designed and fabricated HTS ferroelectric phase shifter using high frequency system simulator and standard photolithography method, respectively The HTS phase shifter shows a low insertion loss (2.97 dB) and large phase change ($\162^{circ}$) with 40 V do bias at 10 GHz. The HTS phase shifter shows 54 of figure of merit. These results can be applicable to phased anay antenna system for satellite communication services.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.44-44
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• 2007

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.7-7
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• 2004

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.50-50
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• 2008

• 센서학회지
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• 제4권3호
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• pp.37-42
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• 1995

고주파 마그네트론 스펏터링법으로 MgO 기판위에 제조된 PLT((PbLa)$TiO_{3}$) 박막의 제조변수에 따른 특성을 조사하였다. PbO 과잉인 타겟을 사용하였으며 기판온도, 분위기압, $Ar/O_{2}$, 및 고주파 전력밀도가 각각 $640^{\circ}C$, 10 mTorr, 10/1, 및 $1.7\;W/cm^{2}$ 일 때 가장 좋은 특성을 나타내었다. 이러한 조건에서 제조된 PLT 막은 증착율이 $62.5\;{\AA}/min$, Pb/Ti가 1/2, 비유전율이 200이였으며 좋은 c축 배양성과 결정성을 나타내었다.

• Progress in Superconductivity
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• 제9권1호
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.27-27
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• 2005