• Title/Summary/Keyword: Mg-doped

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Electrical Properties of Mg Doped ZnSnO TFTs Fabricated by Solution-process (용액공정을 이용한 ZnSnO 산화물 반도체 박막 트랜지스터에서 Mg 첨가에 따른 영향)

  • Choi, Jun-Young;Park, Ki-Ho;Kim, Sang-Sig;Lee, Sang-Yeol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.9
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    • pp.697-700
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    • 2011
  • Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.

Effect of sintering temperature on microstructure and dielectric properties in (Dy, Mg)-doped BaTiO3 (Dy 및 Mg가 첨가된 BaTiO3에서 소결 온도가 미세구조와 유전특성에 미치는 영향)

  • Woo, Jong-Won;Kim, Sung-Hyun;Choi, Moon-Hee;Jeon, Sang-Chae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.5
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    • pp.175-182
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    • 2022
  • Rare-earth elements were doped with Mg to enhance the temperature stability of dielectric properties of BaTiO3 for its application to MLCC (Multi-Layer Ceramic Capacitor). The additives strongly affect both grain growth and densification behaviors during sintering, and hence dielectric properties. The additive effects therefore should be examined in each system with different additives. This study investigated the crystal structure, grain growth and densification behaviors and related variations in dielectric constant with respect to sintering temperature. Dielectric constant appears to be varied with grain size in a temperature range between 1200 and 1300℃, suggesting the importance of grain size control. The temperature dependence of grain size variation was well explained by an established theory correlating the grain growth behavior with grain boundary structure. This accordance provides a basis for sintering technique to control grain growth thus to improve dielectric constant in rare-earth doped BaTiO3.

High Thermoluminescence Properties of Dy+Ce, and Dy+Na Co-Doped MgB4O7 for a Light Tracer Application (비화공식 예광탄 응용을 위한 Dy+Ce 및 Dy+Na 이중 도핑된 MgB4O7의 높은 열발광 특성)

  • Jinu Park;Nakyung Kim;Jiwoon Choi;Youngseung Choi;Sanghyuk Ryu;Sung-Jin Yang;Duck Hyeong Jung;Byungha Shin
    • Korean Journal of Materials Research
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    • v.33 no.1
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    • pp.15-20
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    • 2023
  • 'Tracers' are bullets that emit light at the backside so that the shooter can see the trajectory of their flight. These light-emitting bullets allow snipers to hit targets faster and more accurately. Conventional tracers are all combustion type which use the heat generated upon ignition. However, the conventional tracer has a fire risk at the impact site due to the residual flame and has a by-product that can contaminate the inside of the gun and lead to firearm failure. To resolve these problems, it is necessary to develop non-combustion-type tracers that can convert heat to luminance, so-called 'thermoluminescence (TL)'. Here, we highly improve the thermoluminescence properties of MgB4O7 through co-doping of Dy3++Ce3+ and Dy3++Na+. The presence of doping materials (Dy3+, Ce3+, Na+) was confirmed by XPS (X-ray photoelectron spectroscopy). The as-synthesized co-doped MgB4O7 was irradiated with a specific radiation dose and heated to 500 ℃under dark conditions. Different thermoluminescence characteristics were exhibited depending on the type or amounts of doping elements, and the highest luminance of 370 cd/m2 was obtained when Dy 10 % and Na 5 % were co-doped.

Effects of Sintering Temperature and SiC Contents on the Microstructure and Superconducting Properties of In-situ $MgB_2$ Wires (In-situ $MgB_2$ 선재의 소결온도와 SiC 함량에 따른 미세조직 및 초전도 특성 연구)

  • Hwang, Soo-Min;Park, Eui-Cheol;Park, Si-Hong;Jang, Seok-Hern;Kim, Kyu-Tae;Lim, Jun-Hyung;Joo, Jin-Ho;Kang, Won-Nam;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.9 no.1
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    • pp.68-73
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    • 2007
  • We fabricated the in-situ $MgB_2$ wires using the powder-in-tube method and investigated the effects of sintering temperature and SiC contents on the microstructure and superconducting properties. Pure $MgB_2$ wires and 5, 10, 20 wt.% SiC doped $MgB_2$ wires were sintered at $600-1000^{\circ}C$ for 30 minutes in Ar atmosphere. We found that $MgB_2$ phase was mostly formed at the sintering temperature of $700^{\circ}C$ and above, and the critical temperature ($T_c$) increased with increasing sintering temperature. For the $MgB_2$ sintered at $850^{\circ}C$, the highest critical current density ($J_c$) was obtained to be $3.7{\times}10^5\;A/cm^2$ at 5 K and 1.6 T by a magnetic properties measurement system (MPMS). The addition of SiC to the $MgB_2$ wires changed microstructure and critical properties. SEM observation showed that the $MgB_2$ core had considerable micro-cracks in undoped wire and the density of micro-cracks decreased with increasing SiC contents. The critical temperature decreased as the SiC contents increased, on the other hand, the critical current density of SiC doped $MgB_2$ wires in high magnetic field was enhanced compared to that of undoped $MgB_2$ wires.

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