Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Mg Doped ZnSnO TFTs Fabricated by Solution-process

용액공정을 이용한 ZnSnO 산화물 반도체 박막 트랜지스터에서 Mg 첨가에 따른 영향

  • Choi, Jun-Young (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Park, Ki-Ho (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Kim, Sang-Sig (Semiconductor Engineering, University of Korea) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 최준영 (한국과학기술연구원 전자재료연구센터) ;
  • 박기호 (한국과학기술연구원 전자재료연구센터) ;
  • 김상식 (고려대학교 나노반도체공학과) ;
  • 이상렬 (한국과학기술연구원 전자재료연구센터)
  • Received : 2011.07.26
  • Accepted : 2011.08.24
  • Published : 2011.09.01
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Abstract

Thin-film transistors(TFTs) with magnesium zinc tin oxide(MZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Mg contents in MZTO system. Because the Mg has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy ($V_O$). As a result, the Mg act as carrier suppressor and oxygen binder in the MZTO as well as a Vth controller.

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References

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