• Analytical Science and Technology
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• v.12 no.3
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• pp.190-195
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• 1999

The metabolism of testosterone ($17{\beta}$-hydroxy-androst-4-en-3-one) was confirmed in horse after a single intramuscular administration of testosterone cypionate (750 mg). Solvent extracts of urine obtained with enzymatic hydrolysis and methanolysis were analyzed by GC/MS after oxime t-butyldimethylsilyl (oxime-TBDMS) derivatization. The structures of four urinary metabolite after testosterone administration in horse were determined based on EI mass spectra and $5{\alpha}$-androstane-$3{\beta}$, $17{\alpha}$-diol and $5{\alpha}$-androstane-$3{\beta}$-ol-17-one as major was confirmed with authentic standard. Also the concentrations of $5{\alpha}$-androstane-$3{\beta}$, $17{\alpha}$-diol, $5{\alpha}$-androstane-$3{\beta}$, $17{\beta}$-diol, dehydroepiandrosterone (DHEA), $5{\alpha}$-androstane-$3{\beta}$-ol-17-one and testosterone were determined in the urine of normal subjects and the urine after administration. The recovery and detection limit in the most drugs were 86.3~94.7% and 1~3 ppb, respectively. Correlation coefficients for calibration were in the range of 0.984~0.999. Excretion profile of testosterone presents the rapid and large increasement up to maximum values at days 5 after administration and the slow regression. The relative ratios of testosterone, its metabolites over DHEA were determined for indication of testosterone administration in horse doping.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.35-39
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• 2005

Phosphor powders of zinc gal late added with Mg and rare-earth elements were prepared by sol id state reaction to improve luminescent properties. Green emitting $ZnMnGa_{2}O_{4}$ reached maximum intensity at Mn=0,005 mole$\%$ and further improvement was achieved by addition of $Mg^{2+}$. Tm, Mg-added zinc gallate phosphor exhibited a strong blue band emission, peaking at about 420 nm with the maximum intensity at the concentration of 0.003 mole$\%$ Mg and 0.015 mole$\%$ Tm. Deepening of the potential wells of the ground and excited states was suggested to be the cause for the enhancement in emission intensity at optimal doping of Mg and Tm.

• Carbon letters
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• v.11 no.4
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• pp.332-335
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• 2010

The photodegradation of the model compounds Quinol, an aromatic organic compound and Acid blue FFS, an acid dye of chemical class Triphenylmethane was studied by using illumination with UV lamp of light intensity 250W. $TiO_2$ and $TiO_2$ doped with Boron and Nitrogen was used as catalyst. The sol-gel method was followed with titanium isopropoxide as precursor and doping was done using Boron and Nitrogen. In photocatalytic degradation, $TiO_2$ and doped $TiO_2$ dosage, UV illumination time and initial concentration of the compounds were changed and examined in order to determine the optimal experimental conditions. Operational time was optimized for 360 min. The optimum dosage of $TiO_2$ and BN doped $TiO_2$ was obtained to be 2 $mgL^{-1}$ and 2.5 $mgL^{-1}$ respectively. Maximum degradation % for quinol and Blue FFS acid dye was 78 and 95 respectively, at the optimum dosage of BN-doped $TiO_2$ catalyst. It was 10 and 4% higher than when undoped $TiO_2$ catalyst was used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• Progress in Superconductivity and Cryogenics
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• v.17 no.2
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• pp.1-17
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• 2015

$MgB_2$ thin films with superior superconducting properties are very promising for superconducting magnets, electronic devices and coated conductor electric power applications. A clear understanding of flux pinning mechanism in $MgB_2$ films could be a big aid in improving the performance of $MgB_2$ by the enhancement of $J_c$. The fabrication advancement and the understanding of flux pinning mechanism of $MgB_2$ thin and thick films fabricated by using hybrid physical-chemical vapor deposition (HPCVD) are reviewed. The distinct kind of $MgB_2$ films, such as single-crystal like $MgB_2$ thin films, $MgB_2$ epitaxial columnar thick films, and a-axis-oriented $MgB_2$ films are included for flux pinning mechanism investigation. Various attempts made by researchers to improve further the flux pinning property and $J_c$ performance by means of doping in $MgB_2$ thin films by using HPCVD are also summarized.

• Bulletin of the Korean Chemical Society
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• v.12 no.1
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• pp.13-17
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• 1991

The preparation and characterization of semiconductive electrodes of MgO doped $Fe_2O_3$ were investigated. Pellets of MgO doped $Fe_2O_3$ were sintered at high temperatures between 1300$^{\circ}$C and 1400$^{\circ}$C and quenched rapidly in distilled water. The surfaces were analyzed by X-ray diffraction and scanning Auger electron spectroscopy. The surfaces of pellets contained both corundum structure ($Fe_2O_3$) and spinel structure ($Mg_xFe_{3-x}O_4$). Electrodes made of this material gave comparable anodic and cathodic photocurrents under illumination. The cathodic and anodic photocurrent on these photoelectrodes were verified high at 5-10 wt. percent that is critical doping amounts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.481-482
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• 2006

플라즈마 화상표시기 (PDP)의 보호막 물질로 사용 중인 다결정 MgO의 특성을 개선하기 위하여 본 연구에서는 MgO에 희토류계 원소를 치환하여 제조하였으며, 치환량에 따른 MgO 보호막의 광학적 특성과 전기적 특성을 고찰하였다. MgO + 100 ppm $Gd_2O_3$조성으로 제작한 MgO 박막의 이차전자 방출계수 값이 순수 MgO 보다 35% 높게 나타났다. $Gd_2O_3$ dopant가 100 ppm 첨가시까지 밀도가 증가하였으나, 그 이상 첨가시 감소하는 경향을 나타냈다. 가속전압 200 V에서 이차전자 방출계수는 0.138 이었고 표면거칠기는 5.77 nm 이었으며 투과율은 550 nm 에서 95.76% 이었다.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.58-61
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• 2002

Photoluminescence up-conversion in semiconductor heterostructures is a phenomenon in which luminescence occurs at energies higher than that of the excitation photons. It has been observed in many semiconductor heterostructure systems, including InP/AnALAs, CdTe/CdMgTe, GaAs/ordered-(Al)GalnP, GaAs/AIGaAs, and InAs/GaAs. In this wort, GaAs/AIGaAs heterostructures are used as a model system to study the mechanism of the up-conversion process. This system is ideal for testing different models because the band offsets are quite well documented. Different heterostructures are designed to study the effect of disorder on the up-converted luminescence efficiency. In order to study the roles of different types of carriers, the effect of doping was investigated. It was found that the up-converted luminescence is significantly enhanced by p-type doping of the higher-band-gap material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.104-108
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• 1993

Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.307-312
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• 2007

The films of Er-doped ZnO (ZnO:Er) were prepared onto MgO wafers by ultrasonic spray pyrolysis at $550^{\circ}C$. The concentration of Er in the deposition source varied from 0.5 wt% to 3.0 wt%. The crystallographic properties and surface morphologies of the films were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the Er concentration in the films. The films were grown as polycrystalline with a dominant direction of [002]. The grain size of the films were reduced by Er-doping. Er-doping enhanced the ultraviolet emission of ZnO:Er films. The ZnO:Er films prepared with the deposition source of 2.0 wt% Er showed the strongest ultraviolet light emission peak among the films in this study.