• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Bulletin of the Korean Chemical Society
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• v.19 no.9
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• pp.927-933
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• 1998

Polycrystalline powder of vanadium-doped forsterite (Vδ $Mg_2SiO_4$) was synthesized by the $H_2O_2$-assisted sol-gel method. The vanadium dopant, which was added as VO$(OMe)_3$ in methanol, went through several redox reactions as the sol-gel reaction proceeded. Upon adding VO$(OMe)_3$ to a mixture of $Mg(OMe)_2$ and Si$(OEt)_4$ in methanol, V(V) reduced to V(IV). As hydrolysis reaction proceeded, the V(IV) oxidized all back to V(V). Apparently, some of the V(V) reduced to V(IV) during subsequent gelation by condensation reaction. The V(IV) remained even after heat treatment of the gel in highly oxidizing atmosphere. The crystallization of the xerogel around 880 ℃ readily produced single phase forsterite without any minor phase. Using the polycrystalline powder as feeding stock, single crystals of vanadium-doped forsterite were grown by the floating zone method in oxidizing or reducing atmosphere. The doping was limited in low level because of the high partitioning of the vanadium in liquid phase during melting. The greenish single crystal absorbed visible light of 700∼1100 nm. But, no emission was obtained in near infrared range.

• Progress in Superconductivity
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• v.9 no.1
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• pp.62-67
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• 2007

The effects of the heat-treatment temperature on the carbon (C) substitution amount, full width at half maximum (FWHM) value, critical temperature ($T_c$), critical current density ($J_c$) have been investigated for 10 wt % malic acid ($C_4H_6O_5$)-doped $MgB_2/Fe$ wires. All the samples were fabricated by the in-situ powder-in-tube (PIT) method and heat-treated within a temperature range of $650^{\circ}C$ to $1000^{\circ}C$. As the heat-treatment temperature increased, it seemed that the lattice distortion was increased by a more active C substitution into the boron sites from the malic acid addition. These increased electron scattering defects seemed to enhance the $J_c-H$ properties in spite of an improvement in the crystallinity, such as a decrease of the FWHM value and an increase of the $T_c$. Compared to the un-doped wire heat-treated at $650^{\circ}C$ for 30 min, the $J_c$ was enhanced by the C doping in a high-field regime. The wire heat-treated at $900^{\circ}C$ resulted in a higher magnetic $J_c$ of approximately $10^4\;A/cm^2$ at 5 K and 8 T.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• Journal of Powder Materials
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• v.15 no.3
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• pp.182-187
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• 2008

Carbon was known to be one of effective additives which can improve the flux pinning of $MgB_2$ at high magnetic fields. In this study, glycerin $(C_3H_8O_3)$ was selected as a chemical carbon source for the improvement of critical current density of $MgB_2$. In order to replace some of boron atoms by carbon atoms, the boron powder was heat-treated with liquid glycerin. The glycerin-treated boron powder was mixed with an appropriate amount of magnesium powder to $MgB_2$ composition and the powder pallets were heat treated at $650^{\circ}C\;and\;900^{\circ}C$ for 30 min in a flowing argon gas. It was found that the superconducting transition temperature $(T_c)$ of $Mg(B_{1-x}C_x)_2$ prepared using glycerin-treated boron powder was 36.6 K, which is slightly smaller than $T_c$(37.1 K) of undoped $MgB_2$. The critical current density $(J_c)$ of $Mg(B_{1-x}C_x)_2$ was higher than that of undoped $MgB_2$ and the $T_c$ improvement effect was more remarkable at higher magnetic fields. The $T_c$, decrease and $J_c$ increase associated with the glycerin treatment for boron powder was explained in terms of the carbon substitution to boron site.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.41-41
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1473-1476
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• 2008

Doping the nanoparticles of Pd, p-$BaTiO_3$, $SiO_2$ and MgO into LCs alters their physical properties such as $K_{ii}$, $\Delta\varepsilon$, ${\Delta}n$, $\gamma_1$ and $T_{NI}$. Except for $K_{33}$, all these parameters decreases and thus bring the reduction of operating voltage and/or response times.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.541-548
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• 1991

Sinterability and stability of TZP ceramics co-stabilized by 12 mol% CeO2 and divalent or trivalent oxides less than 1 mol% were investigated. Divalent and trivalent oxides increased stability of tetragonal ZrO2. 100% tetragonal ZrO2 phase was obtained by doping 12 mol% CeO2 and 0.2 mol% CaO and MgO respectively when sintering was carried out at 1500$^{\circ}C$ for 2 hours. Divalent and trivalent oxides improved sinterability and inhibit grain growth of ZrO2. And it was found that CaO was the most effective sintering aid and grain growth inhibitor for ZrO2 in this study. Incorporation of divalent and trivalent oxides into 12Ce-TZP increased the strength of 12Ce-TZP and particulary 12Ce, 0.4Ca-TZP exhibited a flexural strength of about twofold greater than 12Ce-TZP.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.186.1-186.1
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• 2014

Graphene, which is a 2-dimensional carbon material, has been attracting much interest due to its unique properties and potential applications. So far, many interesting experimental and theoretical works have been done concerning the electronic properties of graphene on various substrates. Especially, there are many experimental reports about doping in graphene which is caused by interaction between graphene and its supporting substrates. Here, we report the study of charge transfer between graphene and oxide substrates using density functional theory (DFT) calculations. In this study, we have investigated the charge transfer related with graphene considering various oxide substrates such as SiO2(0001) and MgO(111). Details in charge transfer between graphene and oxides are analyzed in terms of charge density difference, band structure and work function.