• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.91-94
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• 2002

Textured Ce$O_{2}$ buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition The texture of deposited Ce$O_{2}$ films was varied with deposition temperature(T) and oxygen partial pressure($Po_{2}$). ($\ell$ 00) textured Ce$O_{2}$ films were deposited at T= 500~$520^{\circ}C$, $Po_{2}$= 0.90~3.33 Torr. The growth rate of the Ce$O_{2}$ films was 150~200 nm/min at T= $520^{\circ}C$ and $Po_{2}$= 2.30 Torr, which was much faster than that prepated by other physical deposition method.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.84-84
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• 2002

• 한국재료학회지
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• 제11권8호
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• pp.655-660
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• 2001

Metalorganic chemical vapor deposition (MOCVD)으로 성장한 $In_{0.5}$ ($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 특성을 표면 광전압 (surface Photovoltage ; SPV) 측정으로 연구하였다. $In_{0.5}$($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종접합 구조의 SPV 측정값을 Lorentzian 피팅한 띠 간격에너지 ($E_{0}$ ) 값과 조성비 (x)로 구한 이론 값이 잘 일치하였다. 그리고 변조 주파수 의존성을 측정한 결과 SPV 신호의 형태는 변하지 않고, 신호의 크기만이 변하는 것은 광 조사에 따른 전기적 상태의 과도 현상에 따른 것이고, GaAs와 InGaAlP의 특성시간의 차이는 광 캐리어의 수명의 차이로 분석된다. 그리고 온도 의존성 측정으로 $In_{0.5}$ /($Gal_{1-x}$ $Al_{x}$ )0.5P/GaAS 이중 이종 접합 시료의 균일한 변형분포와 계면상태가 양호함을 알 수 있었다.

• Applied Microscopy
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• 제27권4호
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• pp.483-488
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• 1997

A misfit dislocation generation in InAs epilayers grown on (001) InP substrates (oriented $2^{\circ}$ off (001) toward the [110] direction) using metalorganic chemical-vapor deposition was studied. The InAs film of 17 nm thickness grown at $405^{\circ}C$ showed the three different arrays of dislocations: a straight orthogonal array to the <110> direction, an array to the >100> direction, and an array tilted by a degree of $5\sim45^{\circ}$ from the [110] direction. All of the dislocations had a/2<101> Burgers vectors inclined $45^{\circ}$ to the interface. Upon annealing at $660^{\circ}C$ the InAs films with 60, 140 and 220 nm thicknesses, most of the misfit dislocations became the Lomer type $(\sim100%)$ oriented exactly along the >110> direction. These misfit dislocation spacings were decreased with increasing the InAs thickness up to 220 nm thickness. This phenomena was interpreted by the relationship between the dislocation interaction energy among parallel misfit dislocations and the opposite remnant InAs epilayer strain energy. The distance between misfit dislocations was measured by transmission electron microscopy.

• Progress in Superconductivity
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• 제3권1호
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.83-85
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• 2004

MOCVD(metalorganic chemical vapor deposition)에 의해 성장된 InGaAs/AlGaAs 물질을 이용하여 V-형 양자선 (V-groove quantum-wire) 어레이(array) 구조에서 이득 결합(gain-coupling)에 의한 분포 광귀환(distributed optical feedback) 특성을 조사하였다. 분포 귀환형 (distributed feedback, DFB) 구조를 제작하는 동안 격자 재성장(grating overgrowth)을 피하기 위하여, 새롭게 개발된 constant MOCVD 성장 방법을 적용하였고, Bragg 파장에서 DFB 방향으로 광귀환의 결과인 스펙트럼의 이득 이방성(gain asymmetry)을 실험적으로 관찰하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• 한국재료학회지
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• 제18권10호
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.