• Title/Summary/Keyword: Metallic interconnect

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Structure and Oxidation Behavior of the $LaCrO_3$-dispersed Cr alloys ($LaCrO_3$가 분산된 Cr 합금의 구조 및 산화거동)

  • Jeon, Kwang-Sun;Song, Rak-Hyun;Shin, Dong-Ryul;Jo, J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1303-1305
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    • 1998
  • In order to reduce or avoid oxidation problem at operation the interconnects in SOFCs have so far mostly been made of ceramic material. It has high chemical stability both under cathode and anode condition, relatively thermal expansion coefficient that matchs that of electrolyte material YSZ. But this material shown rather weak in the low oxygen atmosphere and thermal shock, and it has lower mechanical strength than alloys. To avoid these problems one may consider to use metals or alloys as materials for interconnects. Metallic interconnects are advantageous because of their high thermal and electronic conductivities. But it has some problems, Those are high thermal expansion and oxidation at high temperature in air. To solve these problems in the interconnection material in this study, $LaCrO_3$-dispersed Cr alloys for metallic interconnector of SOFC have been investigated as a fuction of $LaCrO_3$ content in the range of 5 to 25 vol.%. The Cr alloy were prepared by mixing Cr and $LaCrO_3$ powders in high-energy ball mill for 48h and by sintering under Ar atmosphere with 5vol.% $H_2$ for 10h at $1500^{\circ}C$. The alloys had a relative density of 95% and above. The Cr alloys in composed of two kind of small $LaCrO_3$ and large Cr particles. As the $LaCrO_3$ content increased, the Cr particle size decreased but the $LaCrO_3$ particle size remained contant. Also the oxidation tests show that the $LaCrO_3$-dispersed Cr is very resistant to oxidation in air. These results means that $LaCrO_3$-dispersed Cr is a useful material for metallic interconnect of planar SOFC.

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Effect of Surface Treatments of Stainless Steels on Oxidation Behavior Under Operating Condition of IT SOFC Interconnect (IT SOFC 인터커넥터 구동 조건에서의 스테인레스 소재의 산화거동에 미치는 표면전처리의 영향)

  • Moon, Min-Seok;Woo, Kee-Do;Kim, Sang-Hyuk;Yoo, Myung-Han
    • Korean Journal of Metals and Materials
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    • v.49 no.1
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    • pp.25-31
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    • 2011
  • Solid oxide fuel cells (SOFCs) have many attractive features for widespread applications in generation systems. Recently, stainless steels have attractive materials for metallic bipolar plate because metallic bipolar plates have many benefits compared to others such as graphite and composite bipolar plates. SOFC operates on high temperature of about $800{\sim}1000^{\circ}C$ than other fuel cell systems. Thus, many studies have attempted to reduced the operation temperature of SOFC to about $600{\sim}800^{\circ}C$, which is the intermediate temperature (IT) of SOFC. Low cost and high-temperature corrosion resistance are very important for the practical applications of SOFC in various industries. In this study, two specimens, 304 and 430 stainless steels with and without different pre-surface treatments on the surface were investigated. And, specimens were exposed at high temperature in the box furnace under oxidation atmosphere of $800^{\circ}C$. Oxidation behavior have been investigated with the materials exposed at different times (100 hrs and 400 hrs) by SEM, EDS and XRD. By increasing exposure time, the amount of metal oxide increased in the order like; STS304 < STS430 and As-received < As-polished < Sand-blast specimens.

A review : atomic layer etching of metals

  • Yun Jong Jang;Hong Seong Gil;Gyoung Chan Kim;Ju Young Kim;Chang Woo Park;Do Seong Pyun;Ji Yeon Lee;Geun Young Yeom
    • Journal of the Korean institute of surface engineering
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    • v.57 no.3
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    • pp.125-139
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    • 2024
  • As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

Oxidation and Electrical Properties of (LaSr)(CrCo)3Coated STS-430 Steel by Plasma Spraying (플라즈마 스프레이 (LaSr)(CrCo)O3 코팅된 STS-430 합금의 고온 산화 거동 및 전기적 특성)

  • Lee, Chung-Hwan;Lim, Kyeong-Tae;Baik, Kyeong-Ho
    • Journal of Powder Materials
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    • v.16 no.3
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    • pp.185-190
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    • 2009
  • Fe-Cr steels are the most promising candidate for interconnect in solid oxide fuel cells. In this study, an effective, dense and well adherent (LaSr)(CrCo)$O_3$ [LSCC] coating layer was produced onto 430 stainless steel (STS-430) by atmospheric plasma spraying and the oxidation behavior as well as electrical properties of the LSCC coated STS-430 were investigated. A significant oxidation of pristine STS-430 occurred at $800^{\circ}C$ in air environment, leading to the formation of $Cr_2O_3$ and $FeCr_2O_4$ scale layer up to ${\sim}7{\mu}m$ after 1200h, and consequently increased an area specific resistance of $330\;m{\Omega}{\cdot}cm^2$. Although the plasma sprayed LSCC coating contained the characteristic pore network, the coated samples presented apparent advantages in reducing oxidation growth of STS-430, resulting a decrease in oxide scale thickness of ${\sim}1{\mu}m$ at $800^{\circ}C$ after 1200h. The area specific resistance of the LSCC coated STS-430 was much reduced to ${\sim}7\;m{\Omega}{\cdot}cm^2$ after exposure at $800^{\circ}C$ for 1200h, compared to that of the pristine STS-403.

Characteristics of Anode-supported Flat Tubular Solid Oxide Fuel Cell (연료극 지지체식 평관형 고체산화물 연료전지 특성 연구)

  • Kim Jong-Hee;Song Rak-Hyun
    • Journal of the Korean Electrochemical Society
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    • v.7 no.2
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    • pp.94-99
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    • 2004
  • Anode-supported flat tubular solid oxide fuel cell (SOFC) was investigated to increase the cell power density. The anode-supported flat tube was fabricated by extrusion process. The porosity and pore size of Ni/YSZ ($8mol\%$ yttria-stabilized zirconia) cermet anode were $50.6\%\;and\;0.23{\mu}m$, respectively. The Ni particles in the anode were distributed uniformly and connected well to each other particles in the cermet anode. YSZ electrolyte layer and multilayered cathode composed of $LSM(La_{0.85}Sr_{0.15})_{0.9}MnO_3)/YSZ$ composite, LSM, and $LSCF(La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.7}O_3)$ were coated onto the anode substrate by slurry dip coating, subsequently. The anode-supported flat tubular cell showed a performance of $300mW/cm^2 (0.6V,\; 500 mA/cm^2)\;at\;500^{\circ}C$. The electrochemical characteristics of the flat tubular cell were examined by ac impedance method and the humidified fuel enhanced the cell performance. Areal specific resistance of the LSM-coated SUS430 by slurry dipping process as metallic interconnect was $148m{\Omega}cm^2\;at\;750^{\circ}C$ and then decreased to $148m{\Omega}cm^2$ after 450hr. On the other hand, the LSM-coated Fecralloy by slurry dipping process showed a high area specific resistance.

Oxidation Properties of Cobalt Protective Coatings on STS 444 of Metallic Interconnects for Solid Oxide Fuel Cells (고체산화물 연료전지 금속연결재용 STS 444의 코발트 보호막 산화 특성)

  • Hong, Jong-Eun;Lim, Tak-Hyung;Lee, Seung-Bok;Yoo, Young-Sung;Song, Rak-Hyun;Shin, Dong-Ryul;Lee, Dok-Yol
    • Transactions of the Korean hydrogen and new energy society
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    • v.20 no.6
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    • pp.455-463
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    • 2009
  • 코발트 보호막 코팅이 적용된 페라이트계 스테인리스 스틸인 STS 430과 STS 444 소재에 대해 고체산화물 연료전지용 금속연결재로서의 고온 산화 특성에 대해 살펴보았다. 코발트 코팅층은 $800^{\circ}C$ 고온 산화 후 코발트 산화물 및 $Co_2CrO_4$, $CoCr_2O_4$, $CoCrFeO_4$ 등과 같은 코발트가 함유된 스피넬 상을 형성하였다. 또한 페라이트계 스테인리스 스틸과 코발트 코팅의 계면에서 크롬과 철이 함유된 치밀한 산화층을 형성하여 금속연결재 표면의 스케일 성장속도를 감소시키고 금속연결재 내에 함유된 크롬의 외부 확산을 효과적으로 억제하였다. 한편 STS 430은 고온 산화 후 표면에 형성된 스케일 하부에 $SiO_2$와 같은 내부 산화물이 형성된 반면 STS 444는 표면 스케일 이외에 다른 내부 산화물은 확인되지 않았으며 고온에서의 면저항 측정 결과, 코발트가 코팅된 STS 444의 전기 전도성이 STS 430 보다 우수한 것으로 나타났다.

Large Scale Directed Assembly of SWNTs and Nanoparticles for Electronics and Biotechnology

  • Busnaina, Ahmed;Smith, W.L.
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.9-9
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    • 2011
  • The transfer of nano-science accomplishments into technology is severely hindered by a lack of understanding of barriers to nanoscale manufacturing. The NSF Center for High-rate Nanomanufacturing (CHN) is developing tools and processes to conduct fast massive directed assembly of nanoscale elements by controlling the forces required to assemble, detach, and transfer nanoelements at high rates and over large areas. The center has developed templates with nanofeatures to direct the assembly of carbon nanotubes and nanoparticles (down to 10 nm) into nanoscale trenches in a short time (in seconds) and over a large area (measured in inches). The center has demonstrated that nanotemplates can be used to pattern conducting polymers and that the patterned polymer can be transferred onto a second polymer substrate. Recently, a fast and highly scalable process for fabricating interconnects from CMOS and other types of interconnects has been developed using metallic nanoparticles. The particles are precisely assembled into the vias from the suspension and then fused in a room temperature process creating nanoscale interconnect. The center has many applications where the technology has been demonstrated. For example, the nonvolatile memory switches using (SWNTs) or molecules assembled on a wafer level. A new biosensor chip (0.02 $mm^2$) capable of detecting multiple biomarkers simultaneously and can be in vitro and in vivo with a detection limit that's 200 times lower than current technology. The center has developed the fundamental science and engineering platform necessary to manufacture a wide array of applications ranging from electronics, energy, and materials to biotechnology.

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Raman Spectroscopy Analysis of Inter Metallic Dielectric Characteristics in IC Device (Silicon 기반 IC 디바이스에서의 층간 절연막 특성 분석 연구)

  • Kwon, Soon Hyeong;Pyo, Sung Gyu
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.4
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    • pp.19-24
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    • 2016
  • Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.