• Journal of Powder Materials
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• v.16 no.3
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• pp.173-179
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• 2009

In the present study, Zr-base metallic glass(MG)/diamond composites are fabricated using a combination of gas-atomization and spark plasma sintering (SPS). The densification behaviors of mixtures of soft MG and hard diamond powders during consolidation process are investigated. The influence of mixture characteristics on the densification is discussed and several mechanism explaining the influence of diamond particles on consolidation behaviour are proposed. The experimental results show that consolidation is enhanced with increasing diamond/Metallic Glass(MG) size ratio, while the diamond fraction is fixed.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.102-109
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• 2000

It is difficult to meet the cleanliness requirement of $10^{10}/\textrm{cm}^2$ for the giga level device fabrication with mechanical cleaning techniques like scrubbing which is widely used to remove the particles generated during Chemical Mechanical Polishing (CMP) processes. Therefore, the second cleaning process is needed to remove metallic contaminants which were not completely removed during the mechanical cleaning process. In this paper the experimental results for the removal of the metallic contaminants existing on the wafer surface using remote plasma $H_2$ cleaning and UV/$O_3$ cleaning techniques are reported. In the remote plasma $H_2$ cleaning the efficiency of contaminants removal increases with decreasing the plasma exposure time and increasing the rf-power. Also the optimum process conditions for the removal of K, Fe and Cu impurities which are easily found on the wafer surface after CMP processes are the plasma exposure time of 1min and the rf-power of 100 W. The surface roughness decreased by 30-50 % after remote plasma $H_2$ cleaning. On the other hand, the highest efficiency of K, Fe and Cu impurities removal was achieved for the UV exposure time of 30 sec. The removal mechanism of the metallic contaminants like K, Fe and Cu in the remote plasma $H_2$ and the UV/$O_3$ cleaning processes is as follows: the metal atoms are lifted off by $SiO^*$ when the $SiO^*$is evaporated after the chemical $SiO_2$ formed under the metal atoms reacts with $H^+ \; and\; e^-$ to form $SiO^*$.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.06a
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• pp.32-42
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• 2004

Recently, plasma surface-cleaning or surface-etching techniques have been focused in respect of the decontamination of spent or used nuclear parts and equipment. In this study the removal rate of metallic cobalt surface is experimentally investigated via its surface etching rate with a $CF_4-o_2$mixed gas plasma. Experimental results reveal that a mixed etchant gas with about 80% $CF_4$-20% $O_2$ (molar) gives the highest reaction rate and the rate reaches 0.06 ${\mu}m$/min at $380^{\circ}C$ and ion-assisted etching dramatically enhances the surface reaction rate. With a negative 300 V DC bias voltage applied to the substrate, the surface reaction initiation temperature lowers and the rate increases about 20 times at $350^{\circ}C$ and up to 0.43 ${\mu}m$/min at $380^{\circ}C$, respectively. Surface morphology analysis confirms the etching rate measurements. Auger spectrum analysis clearly shows the adsorption of fluorine atoms on the reacted surface. From the current experimental findings and the results discussed in previous studies, mechanistic understanding of the surface reaction, fluorination and/or fluoro-carbonylation reaction, is provided.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.133-138
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• 2013

Acrylonitrile-butadiene-styrene (ABS) plastic is a polymer material extensively used in electrical and electronic applications. Nickel (Ni) thin film was deposited on ABS by electroless plating, after its surface was treated and modified with atmospheric plasma generated by means of dielectric barrier discharges (DBDs) in air. The method in this study was developed as a pre-treatment for electroless plating using DBDs, and is a dry process featuring fewer processing steps and more environmentally friendliness than the chemical method. After ABS surfaces were modified, surface morphologies were observed using a scanning electron microscope (SEM) to check for any physical changes of the surfaces. Cross-sectional SEM images were taken to observe the binding characteristics between metallic films and ABS after metal plating. According to the SEM images, the depths of ABS by plasma are shallow compared to those modified by chemically treatment. The static contact angles were measured with deionized (DI) water droplets on the modified surfaces in order to observe for any changes in chemical activities and wettability. The surfaces modified by plasma showed smaller contact angles, and their modified states lasted longer than those modified by chemical etching. Adhesion strengths were measured using 3M tape (3M 810D standard) and by 90° peel-off tests. The peel-off test revealed the stronger adhesion of the Ni films on the plasma-modified surfaces than on the chemically modified surfaces. Thermal shock test was performed by changing the temperature drastically to see if any detachment of Ni film from ABS would occur due to the differences in thermal expansion coefficients between them. Only for the plasma-treated samples showed no separation of the Ni films from the ABS surfaces in tests. The adhesion strengths of metallic films on the ABS processed by the method developed in this study are better than those of the chemically processed films.

• Journal of Powder Materials
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• v.14 no.6
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• pp.348-353
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• 2007

In the present study, Zr-base metallic glass (MG) and Zr-base BMG/diamond composites were fabricated using a combination of gas atomization and spark plasma sintering (SPS). The microstructure, thermal stability and mechanical property of both the specimens as atomized and sintered were investigated. The experimental results showed that the SPSed specimens could be densified into nearly 100% and maintained the initial thermal stability at the sintering temperature of 630K. In addition, MG/diamond powder composites were successfully synthesised using SPS process. The composites, even a very low diamond volume fraction, generated a significant increase in compressive strength. With increasing the diamond volume fraction, the compressive strength was also increased due to the addition of hardest diamonds. It suggests that these composites would be potential candidates for a new cutting tool material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.131-136
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• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• Advances in materials Research
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• v.9 no.1
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• pp.1-14
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• 2020

The hybrid method of three-dimensional ion implantation and electric arc is presented as a novel plasma-ion technique that allows by means of high voltage pulsed and electric arc discharges, the bombardment of non-metallic and metallic ions then implanting upon the surface of a solid surface, especially out of metallic nature. In this study AISI/SAE 4140 samples, a tool type steel broadly used in the industry due to its acceptable physicochemical properties, were metallographically prepared then surface modified by implanting titanium and simultaneously titanium and nitrogen particles during 5 min and 10 min. The effect of the ion implantation technique over the substrate surface was analysed by characterization and electrochemical techniques. From the results, the formation of Ti micro-droplets upon the surface after the implantation treatment were observed by micrographs obtained by scanning electron microscopy. The presence of doping particles on the implanted substrates were detected by elemental analysis. The linear polarization resistance, potentiodynamic polarization and total porosity analysis demonstrated that the samples whose implantation treatment with Ti ions for 10 min, offer a better protection against the corrosion compared with non-implanted substrates and implanted at the different conditions in this study.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.220-225
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• 2008

In this study, two kinds of Fe-based bulk metallic glasses (BMG) powder were built-up through atmospheric plasma spray (APS) technique. The microstructure of two coatings was analyzed through X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Crystallization and oxidation in coatings were affected by chemical composition and initial powder size. Then, both of them influenced the tribological property.

• Journal of the Korean Ceramic Society
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• v.37 no.9
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• pp.833-838
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• 2000

기존의 핵연료재료 습식처리 공정 대체를 위한 건식 처리 공정 기초 연구로서 산소 플라즈마 기체에 의한 금속우라늄과 이산화우라늄의 산화 연구를 수행하였다. 연구결과 산소 플라즈마를 사용할 경우 $UO_2$는 40$0^{\circ}C$에서 약 300% 정도, 50$0^{\circ}C$에서는 70% 정도의 산화율 증가가 일어났으며 금속우라늄의 경우에도 35$0^{\circ}C$에서 50% 정도의 증가를 확인할 수 있었다. 이들 산화율은 플라즈마 출력이 증가함에 따라 비례적으로 증가하였는데 이는 출력 증가에 따른 플라즈마내 산소 원자의 발생과 일치하여 이러한 산화율 증가 현상은 플라즈마내 산소 원자가 주도하는 것으로 드러났다. 이들 실험 결과는, 기존의 실험 결과와 길이, 시간에 따라 산화량이 선형적으로 증가하는 것으로 나타나 산소 플라즈마 산화 반응은 표면 반응이 주요 반응이라는 것이 밝혀졌다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.04a
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• pp.30-30
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• 2006