• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.82-87
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• 2007

The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be effectively suppressed. Particularly, the effects of trap states at the metal-silicide/silicon interface of S/D junction were simulated by taking into account the tail distributions and the Gaussian distributions at the silicon band edge and at the silicon midgap, respectively. As a result of device simulation, the reduction of interfacial trap states with Gaussian distribution is more important than that of interfacial trap states with tail distribution for improving the metallic junction diodes and SB-MOSFET. It is that a forming gas annealing after silicide formation significantly improved the electrical properties of metallic junction devices.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3183-3189
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• 2010

In order to increase the specific capacitance and energy density of supercapacitors, non-aqueous supercapacitors were prepared using lithium transition-metal oxides and activated carbons as active materials. The electrochemical properties were analyzed in terms of the content of lithium transition-metal oxides. The results of cyclic voltammetry and AC-impedance analyses showed that the pseudocapacitance may stem from the synergistic contributions of capacitive and faradic effects; the former is due to the electric double layer which is prepared in the interface of activated carbon and organic electrolyte, and the latter is due to the intercalation of lithium ($Li^+$) ions. The specific capacitance and energy density of a supercapacitor improved as the lithium transition-metal oxides content increased, showing 60% increase compared to those of supercapacitor using a pure activated carbon positive electrode.

• Bulletin of the Korean Chemical Society
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• v.20 no.8
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• pp.869-874
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• 1999

In this paper, electrochemical techniques are used to investigate hydrothermal-electrochemically formation of barium titanate (BT) ceramic films. For comparison, the electrochemical behaviors of anodic titanium oxide films formed in alkaline solution were also investigated both at room temperature and in hydrothermal condition at 150.0 ℃. Film structure and morphology were identified by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Titanium oxide films produced at different potentials exhibit different film morphology. The breakdown of titanium oxide films anodic growth on Ti electrode plays an important roles in the formation of BT films. BT films can grow on anodic oxide/metal substrate interface by short-circuit path, and the dissolution-precipitation processes on the ceramic film/solution interface control the film structure and morphology. Based upon the current experimental results and our previous work, extensively schematic proce-dures are proposed to model the mechanism of ceramic film formation by hydrothermal-electrochemical method.

• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.339-339
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• 2010

The metallic nanoparticles (Pt, Au, Ag. Cu, etc.) supported on ceria-titania mixed oxide exhibit a high catalytic activity for the water gas shift reaction ($H_2O\;+\;CO\;{\leftrightarrow}\;H_2\;+\;CO_2$) and the CO oxidation ($O_2\;+\;2CO\;{\leftrightarrow}\;2CO_2$). It has been speculated that the high catalytic activity is related to the easy exchange of the oxidation states of ceria ($Ce^{3+}$ and $Ce^{4+}$) on titania, but very little is known about the ceria titanium interaction, the growth mode of metal on ceria titania complex, and the reaction mechanism. In this work, the growth of $CeO_x$ and Au/$CeO_x$ on rutile $TiO_2$(110) have been investigated by Scanning Tunneling Microscopy (STM), Photoelectron Spectroscopy (PES), and DFT calculation. In the $CeO_x/TiO_2$(110) systems, the titania substrate imposes on the ceria nanoparticles non-typical coordination modes, favoring a $Ce^{3+}$ oxidation state and enhancing their chemical activity. The deposition of metal on a $CeO_x/TiO_2$(110) substrate generates much smaller nanoparticles with an extremely high activity. We proposed a mechanism that there is a strong coupling of the chemical properties of the admetal and the mixed-metal oxide: The adsorption and dissociation of water probably take place on the oxide, CO adsorbs on the admetal nanoparticles, and all subsequent reaction steps occur at the oxide-admetal interface.