• Title/Summary/Keyword: Metal-doped

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Nitrogen-doped Nickel Oxide Catalysts for Oxygen-Evolution Reactions (알칼라인 조건에서의 산소발생반응을 위한 N-doped NiO 촉매)

  • Lee, Jin Goo;Jeon, Ok Sung;Shul, Yong Gun
    • Korean Chemical Engineering Research
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    • v.57 no.5
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    • pp.701-705
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    • 2019
  • Oxygen-evolution reaction (OER) in alkaline media has been considered as a key process for various energy applications. Many types of catalysts have been developed to reduce high overpotential in OER, such as metal alloys, metal oxides, perovskite, or spinel. Nickel oxide (NiO) has high potential to increase OER activity according to volcano plots. The exact mechanisms for OER has not been discovered, but defects such as cation or anion vacancy typically act as an active site for diverse electrochemical reactions. In this study, nitrogen was doped into NiO by using ethylenediamine for formation of Ni vacancy, and the effects of N doping on OER activity and stability was studied.

Characterization of GaN on GaN LED by HVPE method

  • Jung, Se-Gyo;Jeon, Hunsoo;Lee, Gang Seok;Bae, Seon Min;Kim, Kyoung Hwa;Yi, Sam Nyung;Yang, Min;Ahn, Hyung Soo;Yu, Young Moon;Kim, Suck-Whan;Cheon, Seong Hak;Ha, Hong Ju;Sawaki, Nobuhiko
    • Journal of Ceramic Processing Research
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    • v.13 no.spc1
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    • pp.128-131
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    • 2012
  • The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.

The Study on Magnetic Properties of Transition Metal Doped Semiconductor (전이금속이 치환된 반도체 물질의 자기적 특성 연구)

  • Kim, Jae-Uk;Cha, Byung-Kwan;Ji, Myoung-Jin;Kwon, Tae-Phil;Park, Byoung-Cheon;Kyoung, Dong-Hyoun;Jin, Hoon-Yeol;Kim, Seung-Hoi;Kim, Jong-Gyu
    • Journal of the Korean Chemical Society
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    • v.54 no.6
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    • pp.766-770
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    • 2010
  • This is the study of magnetic properties of transition metal doped diluted magnetic semiconductors(DMSs). The wurtzite structure samples were synthesized by the sol-gel method. The thermodynamic characteristics and magnetic properties of $Zn_{1-x}Co_xO$ single phase was investigated for different doping concentration (x = 0%, 1%, 2%, 3%, 4%, 5%, 10%, 15%). The property of diluted magnetic semiconductors has been comfirmed by X-ray diffraction (XRD), Scanning Electronic Microscope (SEM) and Vibrating sample magnetometer (VSM). The magnetic properties of pure $Zn_{1-x}Co_xO$ is found to be dominated by the ferromagnetic interaction between doped transition metal ions, where by the ferromagnetic coupling strength is simply increased with the concentration(>5%) of the doped transition metal.

Fabrication of transition metal doped sapphire single crystal by high temperature and pressure acceleration method

  • Park, Eui-Seok;Jung, Choong-Ho;Kim, Moo-Kyung;Kim, Yoo-taek;Hong, Jung-Yoo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.77-79
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    • 1998
  • Metallic chromium was diffused in the{0001},{1120} white sapphires which were grown by the Verneuil method to enhance the physical properties of the sapphires. Chromium metal vapour pressure and {{{{ { N}_{2 } }}}} pressure were kept by {{{{ { 1$\times$10}^{-4 } }}}} torr at 21 50 $^{\circ}C$ and 6 atm in the quartz-tube, respectively. The color do the Cr-doped sapphires was changed to light red. Chromium was diffused faster in the {1120} than 수 the {0001} plane. It was speculated that the planar density was one the factors determining diffusion coeffcient

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Characteristic of transparent OLED using transparent metal cathode with green phosphorescent dopant (투명 금속 음극을 이용한 녹색 인광 OLED의 특성)

  • Yoon, Do-Yeol;Moon, Dae-Gyu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.154-154
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    • 2010
  • We have developed transparent OLED with green phosphorescent doped layer using transparent metal cathode deposited by thermal evaporation technique. Phosphorescent guest molecule, $Ir(ppy)_3$, was doped in host mCP for the green phosphorescent emission. Ca/Ag double layers were used as a cathode material of transparent OLED. The turn-on voltage of OLED was 5.2 V. The highest efficiency of the device reachs to 31 cd/A at 2 mA/$cm^2$.

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Optical, Mechanical and Tribological Properties of $Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ Doped Polycrystalline Silicon Nitride Ceramics

  • Joshi, Bhupendra;Lee, Su-Wan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.51.1-51.1
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    • 2010
  • $Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

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Enhanced Behaviors of Ionic-Polymer Metal Composite (IPMC) Actuator Coupled with Polymeric Anion-doped Polypyrrole Thin Film

  • Hong, Chan;Nam, Jae-Do;Tak, Yong-Sug
    • Journal of the Korean Electrochemical Society
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    • v.9 no.4
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    • pp.137-140
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    • 2006
  • In order to overcome the weak actuation and relaxation problems during the deformation of IPMC actuator, polymeric anion (polystyrenesulfonate)-doped polypyrrole(Ppy(PSS)) was electrodeposited onto IPMC actuator. Electrochemical quartz crystal microbalance study showed that hydrated cations were instilled into Ppy(PSS) film and polymeric-anion dopants introduced during polymerization were not expelled. Ppy(PSS)-coated IPMC actuator formed two electrode/electrolyte interfaces, Pt/nafion and Ppy(PSS)/bulk solution, and additive volume expansion phenomena at interfaces induced the large deformation compensating the relaxation of actuation by back diffusion of water.

Development of Gold Phosphorus Supported Carbon Nanocomposites

  • Mayani, Vishal J.;Mayani, Suranjana V.;Kim, Sang Wook
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.401-406
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    • 2014
  • Metal-containing carbon nanocomposites have shown significance promise in the area of energy storage, heterogeneous catalysis and material science because of their morphology and combined properties. Phosphorus-doped carbon nanocomposites with gold nanoparticles were developed by applying a simple impregnation method and metal deposition technique. Gold-phosphorus supported carbon nanocomposites with two sized (25 and 170 nm) were prepared from economical petroleum pitch residue as the carbon source using an advanced silica template method. These nanocomposites will lead to the novel applications in the field of material science with the combined properties of gold, phosphorus and carbon. The newly prepared gold phosphorus supported carbon nanocomposites were fully characterized using a range of different physico-chemical techniques.

[Li]/[Nb]조성비 변화에 따른 iron-doped $LiNbO_3$ 결정의 특성분석

  • 한지웅;원종원;오근호
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.10a
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    • pp.111-115
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    • 1997
  • Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

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Linearity Enhancement of Doped Channel GaAs-based Power FETs Using Double Heterostructure (이중이종접합을 이용한 채널도핑된 GaAs계 전력FET의 선형성 증가)

  • 김우석;김상섭;정윤하
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.9-11
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    • 2000
  • To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

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