• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.406-407
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• 2008

For this study, Yttrium aluminum garnet (YAG) particles doped $Eu^{3+}$ ions were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various YAG peaks, with the (420) main peak, appeared at all sintering temperature XRD patterns. The YAG phase crystallized with results that are in good agreement with the JCPDS diffraction file 33-0040. The SEM image showed that the resulting YAG:Eu powders had larger sizes with the increse in the sintering temperature. The grain size was about 50nm at $1000^{\circ}C$. The PL intensity of $Eu^{3+}$ has the line peaks of 598, 610, 632nm and has main peak at 591nm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.41-50
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• 1995

A state-of-the-arts GaAs power metal semiconductor field effect transistor (MESFET) for 3.3V operation digital hand-held phone at 900 MHz has been developed for the first time, The FET was fabricated using a low-high doped structures grown by molecular beam epitaxy (MBE). The fabricated MESFETs with a gate width of 16 mm and a gate length of 0.8 .mu.m shows a saturated drain current (Idss) of 4.2A and a transconductance (Gm) of around 1700mS at a gate bias of -2.1V, corresponding to 10% Idss. The gate-to-drain breakdown voltage is measured to be 28 V. The rf characteristics of the MESFET tested at a drain bias of 3.3 V and a frequencyof 900 MHz are the output power of 32.3 dBm, the power added efficiency of 68%, and the third-ordr intercept point of 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order inter modulation.

• ETRI Journal
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• v.34 no.5
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• pp.690-695
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• 2012

We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of $1,000cd/m^2$ and $10,000cd/m^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.172-172
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• 1999

Perovskite Manganese Oxide has been intensively investigated since the discovery of the colossal magnetoresistive(CMR) effect. In this paper, we studied the effect of temperature dependence and various doping dependence of rare earth site ions of La0.7-xPrxCa0.3MnO3 series using Ultraviolet Photoelectron spectroscopy(UPS). They show unusual temperature dependent features and the doped rare earth ions seem to affect the electron-phonon coupling strongly. We found clear evidence of metal-insulator transition from the spectral density at the Fermi level. but the transition temperature is lower than that deduced from transport measurements. Also we found that the spectral features change as time goes on implying that the surface of these materials is somewhat unstable in the vacuum. We can conclude from these results that the surface oxygen atoms correlated to the hopping electrons can escape from the material into the vacuum and that the surface state of these material is different from the bulk state.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.106-113
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• 2006

Electrical properties of $Si_{0.88}Ge_{0.12}(C)$ p-MOSFETs have been exploited in an effort to investigate $Si_{0.88}Ge_{0.12}(C)$ channel structures designed especially to suppress diffusion of dopants during epitaxial growth and subsequent fabrication processes. The incorporation of 0.1 percent of carbon in $Si_{0.88}Ge_{0.12}$ channel layer could accomodate stress due to lattice mismatch and adjust bandgap energy slightly, but resulted in deteriorated current-voltage properties in a broad range of operation conditions with depressed gain, high subthreshold current level and many weak breakdown electric field in gateoxide. $Si_{0.88}Ge_{0.12}(C)$ channel structures with boron delta-doping represented increased conductance and feasible use of modulation doped device of $Si_{0.88}Ge_{0.12}(C)$ heterostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.155-159
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• 2003

The preparation and luminescence characterization of yttrium oxide doped with trivalent europium phosphors by sol-gel method have been investigated. Aqueous metal nitrate solution was mixed with EDTA which was chosen by the most suitable material of sol-gel formation one of appled various chelating agents. we noticed that the samples when are heated with EDTA at a temperature of $100^{\circ}C$ for 1hrs, produced brownish and crisp powders due to condensation reaction on decomposition, dehydration and formation of sol-gel. Hence, when the powder pre-heated was then heated at $1200^{\circ}C$ for 3hrs in atmosphere, the luminescence characterization of resultant $Y_{2}O_{3}:Eu^{3+}$ phosphor was enhanced upto maximum 30% significantly than conventional method through increasing porous region and decreasing particle sizes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.6
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• pp.817-820
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• 2012

We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT's), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT's: one grown at $450^{\circ}C$ and the other grown at $350^{\circ}C$. ZnO grown at $450^{\circ}C$ showed smooth capacitance profile with electron density of $1.5{\times}10^{20}cm^{-3}$. In contrast, ZnO grown at $350^{\circ}C$ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the $SiO_2$ interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.336.2-336.2
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• 2014

Indium Tin Oxide (ITO) thin films are used as the Transparent Conducting Oxide (TCO), such as flat panel display, transparent electrodes, solar cell, touch screen, and various optical devices. ZnO has attracted attention as alternative materials to ITO film due to its resource availability, low cost, and good transmittance at the visible region. Recently, very thin film deposition is important. In order to minimize the damage caused by bending. However, ZnO thin film such as Ga-doped ZnO(GZO) has poor sheet resistance characteristics. To solve this problem, By adding the conductive metal on films can decrease the sheet resistance and increase the mobility of the films. In this study, We analyzed the electrical and optical characteristics of GZO/Ag/GZO (GAG) films by change in Ag and GZO thickness.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.86-86
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• 2017

고효율의 에너지 변환 및 친환경적인 이점들을 이유로, 고분자전해질 연료전지(PEMFC)는 차세대 에너지 장치로 이목을 끌어왔다. 반면, 값비싼 백금 촉매의 이용은 연료전지의 상업적 이용에 주요한 결점으로 작용했다. 최근, Zelenay와 연구팀은 폴리아닐린-철-탄소 복합체구조에서 산소환원활성이 백금과 견주어 비슷한 성능을 낼 수 있음을 보고 하였다. Dodelet은 이러한 높은 성능이 전이금속의 영향에 의한 것일 수 있다는 주장을 하였다. 본 연구팀은 지난 연구에서 제일원리전산모사를 통해 니켈, 코발트, 구리등과 같은 전이금속이 질소가 도핑된 탄소 그래핀층에 미치는 거동을 밝혔다. 결론적으로, 금속들은 질소가 도핑된 그래핀의 전자구조를 바꿀 수 있고, 이러한 전자구조의 변화는 산소 환원반응에서 긍정적으로 작용할 수 있음을 확인하였다. 이러한 이론적 연구에 기반하여, 탄소층으로 감싼 금속은 내구성과 활성을 동시에 보유한 향후 전망있는 촉매 물질로 예상되어진다. 특히, 질소가 도핑된 탄소층으로 코팅된 철-코발트 합금은 계산을 통해 산소환원반응에서 우수할 것으로 예측되었다. 본 연구팀은 FeCo@N-C 나노입자를 직접 합성하였고, 이 촉매의 우수한 활성을 전기화학적, 구조적 관점에서 1) 질소의 도핑 효과, 2) 탄소의 두께 효과, 3) 합금효과에 집중하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.309-309
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• 2010

We have investigated the effect of $H_2$ plasma treatment on the BZO (ZnO:B, Boron doped ZnO) thin films. The BZO thin films are prepared by LP-MOCVD (Low Pressure Metal Organic Chemical Vapor Deposition) technique and the samples of BZO thin film are performed with $H_2$ plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. After exposing $H_2$ plasma treatment, measurement of transmittance, reflectance and haze spectra in 300~1100 nm, electrical properties as resistivity, mobility and carrier concentration and work function was analysed. Regarding the results of the $H_2$ plasma treatment on the BZO thin films are application to the TCO for solar cells, such as the a-Si thin films solar cell.