• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Journal of Korean Ophthalmic Optics Society
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• v.2 no.1
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• pp.17-24
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• 1997

The Voight function which results from the convolution of the Gauss and Lorentz function is applied the MAS-NMR simulation of mixed alkali glasses and the glasses doped transition metal oxides. It is well known that the convolution of the Gauss and Lorentz function cannot be integrated in closed form for arbitrary values. So we make the new computer simulation program from which the Voight lineshape is obtained. The results are accorded well with the MAS-NMR spectra and we can find out the very small change of MAS-NMR lineshape.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.322-323
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• 2006

The nano-sized Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were prepared by combustion method from a mixed aqueous solution of metal nitrates, using citric acid as a fuel. The luminescence formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG phase can form at all of the $Ce^{3+}$ concentration. However, when $Ce^{3+}$ concentration is over 2.0mol%, XRD patterns show $CeO_2$ peak between (321) peak and (400) peak. The pure crystalline YAG:Ce with uniform size of 30nm was obtained at 0.6mol% of the $Ce^{3+}$ concentration. The crystalline YAG:Ce powders showed broad emission peaks in the range 475~630nm and had maximum intensity at 526nm.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.650-655
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• 2002

$SiO_2$ gels containing dispersed fine Te metal particles have been prepared by the sol- gel method using a starting solution containing Tetraethoxy Silane (Si($OC_2$ $H_{5}$ )$_4$), $H_2$O, Ethylalchol ($C_2$$H_{5}$OH), Nitric Acid ($HNO_3$) and Tellurium Tetracholoride ($TeCl_4$) in a several molar ratio. Gelling time of sols was about 3 days and viscosity of solution was very low about 2~3 cP for 3 days. Heat-treatments of the gel have been performed at 500, 700, 900, 1100 and $1300^{\circ}C$ for 1 hour, respectively. We have investigated TG-DTA, X-ray diffraction patterns and SEM of heat-treatmented gels. The size of Te fine particles dispersed in $SiO_2$ gel was about 0.8~1 $\mu\textrm{m}$ and the shape was almost quadrangle.

• Journal of Environmental Science International
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• v.13 no.6
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• pp.537-542
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• 2004

$V_{2}O_{5}/TiO_{2}$ catalysts promoted with Mn were prepared and tested for selective catalytic reduction of NOx in $NH_3.$ The effects of promoter content, degree of catalyst loading were investigated for NOx activity while changing temperatures, mole ratio, space velocity and $O_2$ concentration. Among the various $V-{2}O_{5}$ catalysts having different metal loadings, $V-{2}O_{5}$(1 wt.%) catalyst showed the highest activity(98%) under wide temperature range of $200-250^{\circ}C.$ When the $V-{2}O_{5}$ catalyst was further modified with 5 wt.% Mn as a promoter, the highest activity(90-47%) was obtained over the low temperature windows of $100-200^{\circ}C.$ From Mn-$V_{2}O_{5}/TiO_{2}$, it was found that by addition of 5 wt.% Mn on $V_{2}O_{5}/TiO_{2}$ catalyst, reduction activity of catalyst was improved, which resulted in the increase of catalytic activity and NOx reduction. According to the results, NOx removal decreased for 10%, but the reaction temperature down to $100^{\circ}C.$

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.137-142
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• 1995

Monodispersed $Al_2O_3-TiO_2$ Powder was prepared by metal-alkoxide hydrolsis. A homogeneous nucleation/growth occurred in the solutions containing ethanol, butanol and acetonitrile, and resulted in spherical, submicrometer-sized powder. The titania and the alumina crystals were formed at $800^{\circ}C$ and $1000^{\circ}C$, respectively. These crystala were subsequently reacted each other beyond $1320^{\circ}C$ and formed $Al_2TiO_5$. The relative densities of sintered bodies prepared with as-received powder were examined at the temperature range of 1300-$1500^{\circ}C$ and they were about 79% at $1300^{\circ}C$. The formation of aluminum titanata decreased the relative density at the temperature range of 1300-$1450^{\circ}C$, and at above $1450^{\circ}C$, the relative density started to increase again. It was observed that $\alpha-Al_2O_3$-doped aluminum titanate was more stable than pure aluminum titante at $1200^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.470-473
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• 2000

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased patting density. The devices are scaled down day by day. Therefore, This paper investigates how MOSFET structures influence on transport properties in according to change of channel length and bias and, observes impact ionization between the drain and the gate. This paper proposes three models, i.e., conventional MOSFET, LDD MOSFET and EPI MOSFET. The gate lengths are 0.3$\mu\textrm{m}$ 0.15$\mu\textrm{m}$, 0.075$\mu\textrm{m}$ and scaling factor is λ = 2. We have presented MOSFET's characteristics such as I-V characteristic, impart ionization, electric field, using the TCAD. We have analyzed the adaptive channel and doping influences

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.855-858
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• 2011

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.