• 제목/요약/키워드: Metal-Oxide TFT

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Role of Hf in amorphous oxide thin film transistors fabricated by rf-magnetron sputtering (스퍼터링 공정으로 제작된 비정질 산화물 박막트랜지스터의 하프늄 금속이온 영향)

  • Chong, Eu-Gene;Chun, Yoon-Soo;Jo, Kyoung-Chol;Kim, Seung-Han;Jung, Da-Woon;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.12-12
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    • 2010
  • Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on $SiO_2$/Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.

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Highly stable amorphous indium.gallium.zinc-oxide thin-film transistor using an etch-stopper and a via-hole structure

  • Mativenga, M.;Choi, J.W.;Hur, J.H.;Kim, H.J.;Jang, Jin
    • Journal of Information Display
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    • v.12 no.1
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    • pp.47-50
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    • 2011
  • Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

Gas phase synthesis of Ga2O3 nanoparticles from gallium metal (기상합성법을 이용한 산화갈륨 나노분말의 제조)

  • Park, Jung Won;Won, Chang Min;Kwon, Jun Beom;Lee, Hyukjae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.6
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    • pp.220-225
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    • 2020
  • Gallium oxide nano-powder, the key starting material for IGZO target, is fabricated by gas phase synthesis using a new apparatus consist of reaction, transportation, and collection parts. As a result of gallium metal evaporation above 1150℃, Ga2O3 nano-powders, are successfully synthesized. The SEM images of the synthesized powders displace the spherical shaped powders without severe agglomeration. X-ray diffraction and PSA analysis show that the higher temperature at the reaction part results in the better crystallinity and larger powder size of the synthesized Ga2O3. To see the applicability to IGZO target, Ga2O3 nano-powders synthesized at 1250℃ are mixed with indium oxide and zinc oxide (In2O3 : Ga2O3 : ZnO = 1 : 1 : 1), and then sintered at 1400~1500℃. The highest sintered density of 5.83 g/㎤ (= 91 % of relative density) is achieved when sintered at 1450℃, showing better sinterability compared to the commercially available Ga2O3 powder, which has 5.61 g/㎤ of sintered density at the same condition.

Photofield-Effect in Amorphous InGaZnO TFTs

  • Fung, Tze-Ching;Chuang, Chiao-Shun;Mullins, Barry G.;Nomura, Kenji;Kamiya, Toshio;Shieh, Han-Ping David;Hosono, Hideo;Kanicki, Jerzy
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1208-1211
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    • 2008
  • We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

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Effects of Al-doping on IZO Thin Film for Transparent TFT

  • Bang, J.H.;Jung, J.H.;Song, P.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.207-207
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    • 2011
  • Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

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Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors

  • Fung, Tze-Ching;Chuang, Chiao-Shun;Nomura, Kenji;Shieh, Han-Ping David;Hosono, Hideo;Kanicki, Jerzy
    • Journal of Information Display
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    • v.9 no.4
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    • pp.21-29
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    • 2008
  • We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

InGaZnO active layer 두께에 따른 thin-film transistor 전기적인 영향

  • U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.5-5
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    • 2009
  • Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

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Investigation of contact resistance between metal electrodes and amorphous gallium indium zinc oxide (a-GIZO) thin-film transistors

  • Kim, Woong-Sun;Moon, Yeon-Keon;Lee, Sih;Kang, Byung-Woo;Kwon, Tae-Seok;Kim, Kyung-Taek;Park, Jong-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.546-549
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    • 2009
  • In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

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Au Deposition Effect on Amorphous In-Ga-Zn-O Thin Film Investigated by High-Resolution x-ray Photoelectron Spectroscopy

  • Gang, Se-Jun;Baek, Jae-Yun;Sin, Hyeon-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.301-301
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    • 2012
  • Amorphous In-Ga-Zn-O (a-IGZO)는 광학적으로 투명하고 높은 전자이동도를 가지고 있어서 차세대 thin-film-transistor의 channel layer 물질로 각광받고 있다. 이러한 a-IGZO를 TFT channel layer로 사용하기 위해서는 소스 드레인 전극물질과 IGZO박막의 계면에서 ohmic contact을 만드는 것도 중요하다. 하지만 산화물 반도체의 특성상 금속물질을 증착시킬 때 산화금속계면을 형성하기 때문에 ohmic contact이 형성되기 어려운 것으로 알려져 있다. Au는 보통 전극물질로 많이 사용되는데, 이는 전기전도도가 매우 높고, 독특한 산화환원반응 특성을 보이지만, 화학반응을 잘 일으키지 않는 안정성을 가지는 성질에 기인한다. 본 연구진은 Au가 a-IGZO에 증착 시에 일어나는 표면의 화학적 상태변화를 이해하기 위해 방사광을 이용한 고분해능 광전자 분광법을 이용하여 표면변화를 분석하였다. Au는 (Au 4f) 증착 초기엔 약간의 gold oxide가 함께 형성되지만, 주로 metal gold의 형태로 존재하였다. In 3d, Ga 3d, O 1s, Zn 3d 각각의 스펙트럼에서는 Au 증착으로 인해 낮은 결합에너지에 새로운 state가 나타났다. 한편, In은 상대적으로 다른 원소들에 비해 Au와 좀 더 결합을 잘 하는 것으로 나타났는데 이는, In 5s 전자궤도가 전도메커니즘에서 중요한 역할을 하기 때문에, In-Au의 상대적인 강한 결합은 a-IGZO의 전기적 특성 변화에 기여할 수 있음을 의미한다.

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Investigation of characteristic on Solution-Processed Al-Zn-Sn-O Pseudo Metal-Oxide-Semiconductor Field-Effect-Transistor using microwave annealing

  • Kim, Seung-Tae;Mun, Seong-Wan;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.206.2-206.2
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    • 2015
  • 최근 비정질 산화물 반도체 thin film transistor(TFT)는 차세대 투명 디스플레이로 많은 관심을 받고 있으며 활발한 연구가 진행되고 있다. 산화물 반도체 TFT는 기존의 비정질 실리콘 반도체에 비하여 큰 on/off 전류비, 높은 이동도 그리고 낮은 구동전압으로 인하여 차세대 투명 디스플레이 산업에 적용 가능하다는 장점이 있다. 한편 기존의 sputter나 evaporator를 이용한 증착 방식은 우수한 막의 특성에도 불구하고 많은 시간과 제작비용이 든다는 단점을 가지고 있다. 따라서 본 연구에서는 별도의 고진공 시스템이 필요하지 않을 뿐만 아니라 대면적화에도 유리한 용액공정 방식을 이용하여 박막 트렌지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화 하였다. 제작된 박막 트렌지스터는 p-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 연속해서 photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Pseudo-MOS FET구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성평가가 용이하다는 장점을 가지고 있다. 그 결과, microwave를 통해 열처리한 소자는 100oC 이하의 낮은 열처리 온도에도 불구하고 furnace를 이용하여 열처리한 소자와 비교하여 subthreshold swing(SS), Ion/off ratio, field-effectmobility 등이 개선되는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

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