• 센서학회지
• /
• 제30권2호
• /
• pp.82-87
• /
• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• 센서학회지
• /
• 제33권3호
• /
• pp.125-133
• /
• 2024

Gas chromatography (GC) separation technology and metal oxide semiconductor (MOS) gas sensors have been integrated for the effective analysis of volatile sulfur compounds (VSCs) such as H₂S, CH₃SH, (CH₃)₂S, and (CH₃)₂S₂. The separation and detection characteristics of the GC/MOS system using diluted standard gases were investigated for the qualitative and quantitative analysis of VSCs. The typical concentrations of the standard gases were 0.1, 0.5, 1.0, 5.0, and 10.0 ppm. The GC/MOS system successfully separated H₂S, CH₃SH, (CH₃)₂S, and (CH₃)₂S₂ using a celite-filled column. The reproducibility of the retention time measurements was at a 3% relative standard deviation level, and the correlation coefficient (R²) for the VSC concentration was greater than 0.99. In addition, the chromatograms of single and mixed gases were almost identical.

• 한국전기전자재료학회논문지
• /
• 제37권4호
• /
• pp.347-357
• /
• 2024

Oxide semiconductor gas sensors are widely used for detecting toxic, explosive, and flammable gases due to their simple structure, cost-effectiveness, and potential integration into compact devices. However, their reliable gas detection is hindered by a longstanding issue known as humidity dependence, wherein the sensor resistance and gas response change significantly in the presence of moisture. This problem has persisted since the inception of oxide semiconductor gas sensors in the 1960s. This paper explores the root causes of humidity dependence in oxide semiconductor gas sensors and presents strategies to address this challenge. Mitigation strategies include functionalizing the gas-sensing material with noble metal/transition metal oxides and rare-earth/rare-earth oxides, as well as implementing a moisture barrier layer to prevent moisture diffusion into the gas-sensing film. Developing oxide semiconductor gas sensors immune to humidity dependence is expected to yield substantial socioeconomic benefits by enabling medical diagnosis, food quality assessment, environmental monitoring, and sensor network establishment.

• 센서학회지
• /
• 제29권6호
• /
• pp.365-368
• /
• 2020

As a green and abundant source of energy, H2 has attracted the attention of researchers for use in different applications. Nevertheless, it is highly flammable, and because of its significantly small size, extreme attention is needed to detect its leakage. In this review, we discuss different effects of noble metals on the H2 gas response and performance of metal oxide-based gas sensors. In this regard, we discuss the effects of noble metals, in combination with metal oxides, on H2 gas detection. The catalytic activity towards H2 gas and the formation of heterojunctions with metal oxides are the main contributions of noble metals to the sensing improvement of H2 gas sensors. Furthermore, in the special case of Pd and somewhat Pt, the formation of PdHx and PtHx also affects the H2 sensing performance. This review paper provides useful information for researchers working in the field of H2 gas detection.

• 센서학회지
• /
• 제30권6호
• /
• pp.381-383
• /
• 2021

Light-activated metal oxide gas sensors have been investigated in recent decades. Light illumination enhances the sensing attributes, including the operational temperature, sensitivity, and selectivity. Unfortunately, high operating temperature is a major problem for gas sensors because of the huge energy consumption. Therefore, the importance of light-activated room-temperature sensing has increased. This paper reviews recent light-activated sensors and their sensing mechanisms with a specific focus on metal oxide gas sensors. Studies use the outstanding ZnO and SnO₂ sensors to research photoactivation when illuminated by various sources such as ultraviolet (UV), halogen lamp, or monochromatic light. Photon induction generates electron-hole pairs that increase the number of adsorption sites of gas molecules and ions improving the sensor's sensing properties.

• 한국식품과학회지
• /
• 제30권2호
• /
• pp.356-362
• /
• 1998

된장의 숙성기간을 예측하기 위하여 6개의 metal oxide sensor로 구성된 휴대용 전자코를 이용하였다. Aspergillus oryzae를 사용하여 담금한 된장은 각각 $15,\;20\;25^{\circ}C$에서 숙성시켰다. 전자코에 의한 감응도 변화량은 숙성기간에 따라 온도가 높아짐에 따라 크게 감소되었으며 센서 #3과 #4는 된장의 숙성정도와 기간간에 높은 상관관계를 보여주었다$(r^2=0.71{\sim}0.95)$. 그리고 숙성기간중 생성되는 아미노태질소와 전자코의 감응도 변화간에도 상관관계를 나타내어 휴대용 전자코로 된장의 숙성기간을 예측할 수 있었다.

• 센서학회지
• /
• 제24권1호
• /
• pp.29-34
• /
• 2015

This study aimed to evaluate the characterization of a metal oxide semiconductor and electrochemical gas sensor array for measuring wastewater odor. The sensitivity of all gas sensors observed in sampling method by stripping was 6.7 to 20.6 times higher than that by no stripping, except sensor D (electrochemical gas sensor). The average reduction ratio of sensor signal as a function of initial dilution rate of wastewater was in the order of food plant > food waste reutilization facility > plating plant. The sensitivity of gas sensors was dependent on both the type of wastewater and the dilution rate. The sensor signals observed by the gas sensor array were correlated with the dilution factor (OU) calculated by the air dilution sensory test with several wastewater ($r^2=0.920{\sim}0.997$), except the sensor signals of sensor D measured in the plating plant wastewater. It seems likely that the gas sensor array plays a role in the evaluation of odor in wastewater and is useful tool for on-site odor monitoring in the wastewater facilities.

• 한국응용과학기술학회지
• /
• 제31권2호
• /
• pp.190-196
• /
• 2014

The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

• 센서학회지
• /
• 제27권6호
• /
• pp.362-367
• /
• 2018

A complementary metal oxide semiconductor (CMOS) binary image sensor is proposed for low-power and low-noise operation. The proposed binary image sensor has the advantages of reduced power consumption and fixed pattern noise (FPN). A gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector is used as the proposed CMOS binary image sensor. The GBT PMOSFET-type photodetector has a floating gate that amplifies the photocurrent generated by incident light. Therefore, the sensitivity of the GBT PMOSFET-type photodetector is higher than that of other photodetectors. The proposed CMOS binary image sensor consists of a pixel array with $394(H){\times}250(V)$ pixels, scanners, bias circuits, and column parallel readout circuits for binary image processing. The proposed CMOS binary image sensor was analyzed by simulation. Using the dynamic comparator, a power consumption reduction of approximately 99.7% was achieved, and this performance was verified by the simulation by comparing the results with those of a two-stage comparator. Also, it was confirmed using simulation that the FPN of the proposed CMOS binary image sensor was successfully reduced by use of the double sampling process.

• Journal of the Korean Physical Society
• /
• 제73권12호
• /
• pp.1867-1872
• /
• 2018

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at $350^{\circ}C$ for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at $250^{\circ}C$) and CO (at $200^{\circ}C$) gases in comparison with the undoped samples.