• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.409-414
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• 1999

The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

• Journal of Powder Materials
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• v.9 no.6
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• pp.433-440
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• 2002

Synthesis and compaction of Al-base nano powders by pulsed discharge method were investigated. The aluminum based powders with 50 to 200 nm of diameter were produced by pulsed wire evaporation method. The powders were covered with very thin oxide layer. The perspective process for the compaction and sintering of nanostructured metal-based materials stable in a wide temperature range can be seen in the densification of nano-sized metal powders with uniformly distributed hard ceramic particles. The promising approach lies in utilization of natural uniform mixtures of metal and ceramic phases, e.g. partially oxidized metal powders as fabricated in our synthesis method. Their particles consist of metal grains coated with oxide films. To construct a metal-matrix material from such powder, it is necessary to destroy the hard oxide coatings of particles during the compaction process. This goal was realized in our experiments with intensive magnetic pulsed compaction of aluminum nanopowders passivated in air.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1365-1366
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• 2007

Cobalt oxide was composite with MWNT to attain cycle stable by chemical method. We have been considered CoOx is the ideal material for high energy density electrochemical capacitor due to pseudo capacitor reaction. In this study we found that decrease in resistance due to composite MWNT. Also CoOx/MWNT composite material have resulted larger capacitance and exhibits better electrochemical behavior. The structural feature was investigated by using SEM. The CoOx/MWNT composite is not only a promising ultracapacitor material for energy storages but also has a good possibility because of its great capacitive properties, simple preparation and low cost.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.25-29
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• 1997

Capacitor-type MONOS (metal-oxide-nitride-oxide- semiconductor) NVSMs with 23$\AA$ tunneling oxide and 40$\AA$ blocking oxide were fabricated. The thicknesses of nitride layer were 45$\AA$, 91$\AA$ and 223$\AA$, Breakdown characteristics of MONOS devices were measured to investigate the reliability of superthin ONO structure using ramp voltage and constant voltage method. Reducing the nitride thickness will significantly increase the reliablity of MONOS NVSM.

• Journal of Korea Foundry Society
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• v.26 no.2
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• pp.92-97
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• 2006

Contact material is widely used as electrical parts. Ag-Cd alloy has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. To solve the disadvantages of that, Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to optimize Sn amount that affects the formation of the oxide layer on the surface, we worked for the microstructures and properties of Ag-Sn material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. We have shown that the optimized Sn amount for high hardness is 7.09 wt%Sn. Surface oxide layer forms when Sn amount is over 9.45 wt%. The size of Sn oxide is 20 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Korean Journal of Materials Research
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• v.33 no.2
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• pp.77-86
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• 2023

High-temperature oxidation of a Ni-based superalloy was analyzed with samples taken from gas turbine blades, where the samples were heat-treated and thermally exposed. The effect of Cr/Ti/Al elements in the alloy on high temperature oxidation was investigated using an optical microscope, SEM/EDS, and TEM. A high-Cr/high-Ti oxide layer was formed on the blade surface under the heat-treated state considered to be the initial stage of high-temperature oxidation. In addition, a PFZ (γ' precipitate free zone) accompanied by Cr carbide of Cr₂₃C₆ and high Cr-Co phase as a kind of TCP precipitation was formed under the surface layer. Pits of several ㎛ depth containing high-Al content oxide was observed at the boundary between the oxide layer and PFZ. However, high temperature oxidation formed on the thermally exposed blade surface consisted of the following steps: ① Ti-oxide formation in the center of the oxide layer, ② Cr-oxide formation surrounding the inner oxide layer, and ③ Al-oxide formation in the pits directly under the Cr oxide layer. It is estimated that the Cr content of Ni-based superalloys improves the oxidation resistance of the alloy by forming dense oxide layer, but produced the σ or µ phase of TCP precipitation with the high-Cr component resulting in material brittleness.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.1-10
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• 2010

This is an overview paper reporting our most recent work on processing and microstructure of nano-structured oxides and their photoluminescence and photo-catalysis properties. Zinc oxide and related transition metal oxides such as vanadium pentoxide and titanium dioxide were produced by a combination of magnetron sputtering, hydrothermal growth and atmosphere controlled heat treatment. Special morphology and microstructure were created including nanorods arrays, core-brushes, nano-lollipops and multilayers with very large surface area. These structures showed special properties such as much enhanced photoluminescence and chemical reactivity. The photo-catalytic properties have also been promoted significantly. It is believed that two factors contributed to the high reactivity: the large surface area and the interaction between different oxides. The transition metal oxides with different band gaps have much enhanced photoluminescence under laser stimulation. Use of these complex oxide structures as electrodes can also improve the energy conversion efficiency of solar cells. The mixed oxide complex may provide a promising way to high-efficiency photo emitting materials and photo-catalysts.

• Ceramist
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• v.21 no.2
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• pp.49-58
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• 2018

Metal oxide based materials have been widely used to fields of electrochemical applications. Recently, various type of defects from microstructures of metal oxides and their nanocomposites have been raised as the important material design factors for realizing highly improved electrochemical properties. Previous experimental and theoretical works have suggested that controlling the reaction activity and kinetics of the key electrochemical reactions by activated interfaces originating from the defect sites can play an important role in achieving the robust energy storage and conversion. Therefore, this paper focuses on the role of defect-controlled metal oxide materials such as doping, edge-sites, grain boundaries and nano-sized pores for the high performances in energy storage devices and electrocatalysts. The research approaches demonstrated here could offer a possible route to obtain noble ideas for designing the metal oxide materials for the energy storage and conversion applications.