• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.7
• /
• pp.557-561
• /
• 2001

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.882-885
• /
• 2004

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nanoscale components and Si-technology. In this study, molecular electronic devices were fabricated with amion style derivatives as redox-active component to compare to the devices using Zn-Porphyrin derivatives. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method, and then this LB monolayer is inserted between two metal electrodes. According to current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. Diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with the organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and the top Al electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2000.05a
• /
• pp.735-738
• /
• 2000

The characteristics of wire electrical discharge machining (WEDM) are governed by many factors such as the power supply type, operating condition and electrode material. This work deals with the effect of wire electrode materials on the machining characteristics such as, metal removal rate, surface characteristics and surface roughness during WEDM A wire's thermal physical properties are melting point, electrical conductivity and vapor pressure. One of the desired qualities of wire is a low melting point and high vapor pressure to help expel the contaminants from the gap. They are determined by the mix of alloying elements (in the case of plain brass and coated wire) or the base core material(i.e. molybdenum). Experiments have been conducted regarding the choice of suitable wire electrode materials and influence of the properties of these materials on the machinability and surface characteristics in WEDM, the experimental results are presented and discussed from their metallurgical aspect. And the coating effect of various alloying elements(Au, Ag, Cu, Zn, Cr, Mn, etc.) to the Cu or 65-35 brass core on them was reviewed also. The removal rate of some coated wires are higher than that of 65-35 brass electrode wire because the wire is difficult to break due to the wire cooling effect of Zn evaporation latent heat and the Zn oxide on the surface is effective in preventing short circuit. The removal rate increases with increasing Zn content from 35, 40 and Zn coated wire

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.171-172
• /
• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• Journal of Conservation Science
• /
• v.35 no.1
• /
• pp.33-40
• /
• 2019

During the conservation and maintenance of the birthplace center yard of President Asan Yoon Bosun, four porcelain enamel dishware were excavated from the central yard well. The glaze layer of excavated enamel was severely damaged; hence, the conservation process was done rapidly. In addition, scientific investigation and analysis were conducted to confirm the material properties of the glaze layer. It was confirmed that the outer surface was inverted and dried, while the inner surface was upright and fired during the glazing and drying process by measuring the film thickness. By examining the breakup phenomenon, the breaking up of the white enamel on the colored enamel was confirmed. This indicates that the colored glaze rose to the surface depending on the density of the colored glaze and white glaze. The investigation of the cross-section of the film confirmed that the lower layer formed according to the bonding properties with metal during the glazing process. Analysis of the constituents of the identified lower layer confirmed that there are differences between the specific components of the metal oxide of the lower layer and the surface color development of the upper layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.2
• /
• pp.104-109
• /
• 2019

An analytical threshold voltage model is proposed to analyze the threshold voltage roll-off and drain-induced barrier lowering (DIBL) for a junction-based double-gate (JBDG) MOSFET and a junction-less double-gate (JLDG) MOSFET. We used the series-type potential distribution function derived from the Poisson equation, and observed that it is sufficient to use n=1 due to the drastic decrease in eigenvalues when increasing the n of the series-type potential function. The threshold voltage derived from this threshold voltage model was in good agreement with the result of TCAD simulation. The threshold voltage roll-off of the JBDG MOSFET was about 57% better than that of the JLDG MOSFET for a channel length of 25 nm, channel thickness of 10 nm, and oxide thickness of 2 nm. The DIBL of the JBDG MOSFET was about 12% better than that of the JLDG MOSFET, at a gate metal work-function of 5 eV. It was also found that decreasing the work-function of the gate metal significantly reduces the DIBL.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.4
• /
• pp.76-83
• /
• 1985

Mo2N/Mo double layer which is to be used for gate of the RMOS (refractory metal oxide semiconductor) and interconnection material has been formed by means of low temperature r.f. reactive sputtering in Ar and N2 mixture. The sheet .esistance of 1 000$\AA$Mo2 N/4000$\AA$Mofilm was about 1.20-1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film. The workfunction difference naE between MO2N/MO layer and (100) p-Si with 6-9 ohm'cm resistivity obtained from C-V plots was about -0.30ev, and the fixed charge density Qss/q in the oxide was about 2. Ix1011/cm2. To evaluate the signal transfer delay time per inverter stage, an integrated ring oscillator circuit consisting of 45-stage inverters was fabricated using the polysilicon gate NMOS process. The signal transfer delay time per inverter stage obtained in this experiment was about 0.8 nsec

• Journal of the Korean Ceramic Society
• /
• v.49 no.2
• /
• pp.191-196
• /
• 2012

In this study, tin phosphate glass system($SnO_2-(1-x)P_2O_5-xB_2O_3$) that occur during the melting of the metal oxide inhibition of the oxidation reaction, and to reduce oxides of high melting temperature in the following three methods were melting. The first is the general way in the atmosphere, and the second by injecting $N_2$ gas under a neutral atmosphere, and finally in the air were melted by the addition of a reducing agent Melt in the atmosphere when the oxidation of the metal oxide is inhibited by low temperatures were melting. In addition, the deposition of crystals within glassy or inhibit devitrification phenomenon is also improved over 80% transmittance. This phenomenon, when the melting of glass, many of $Sn^{4+}$ ions are reduced to the $Sn^{2+}$ was forming oxides SnO, because it acts as a modifier oxide.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.278.1-278.1
• /
• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• Journal of Sensor Science and Technology
• /
• v.29 no.6
• /
• pp.420-426
• /
• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.