• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.304-304
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• 2006

Ternary tellurite glassy systems ($Li_2O-V_2O_5-TeO_2$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity (up to $5.63{\times}10^{-5}$ S/cm) at room temperature the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric DC conductivity result have been analyzed in terms of a small polaron-hopping model.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.484-490
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• 2017

We investigated the rewritable operation of a non-volatile memory device composed of Al (top)/$TiO_2$/indium-zinc-oxide (IZO)/Al (bottom). The oxygen-deficient IZO layer of the device was spin-coated with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions, and the $TiO_2$ layer was fabricated by atomic layer deposition. The oxygen vacancies IZO layer of an active component annealed at $400^{\circ}C$ using thermal annealing and it was proven to be in oxygen vacancies and oxygen binding environments with OH species and heavy metal ions investigated by X-ray photoelectron spectroscopy. The device, which operates at low voltages (less than 3.5 V), exhibits non-volatile memory behavior consistent with resistive-switching properties and an ON/OFF ratio of approximately $3.6{\times}10^3$ at 2.5 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.334-335
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• 2005

Ternary tellurite glassy systems ($Li_2O-V_2O_5-P_2O_5$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal? oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode' materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-P_2O_5$ system are particularly interesting, because they exhibit high conductivity (up to $5.95\times10^{-4}$ S/cm) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• 청정기술
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• 제16권4호
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• pp.284-291
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• 2010

온실가스로 알려진 $N_2O$의 촉매 분해는 최소한 670 K 이상의 온도가 요구되는 난해한 공정으로 알려져 있다. 본 연구는 CO 환원제와 더불어 473 K의 저온에서도 $N_2O$를 전량 분해될 정도로 높은 활성을 나타내는 혼합금속산화물(mixed metal oxide: MMO) 촉매에 Ce을 첨가함으로서 나타나는 $N_2O$ 분해활성에의 영향을 검토하기 위하여 수행되었다. MMO 촉매는 Co 및 Al 외에 Rh과 Pd을 사용하고, 여기에 Ce을 미량 첨가하여 공침전법으로 제조하였으며, 결과적으로 Ce 함량이 증가함에 따라 촉매 표면적은 감소하고 $N_2O$의 직접분해 활성이 감소하는 현상이 나타났다. 그러나 CO 환원제의 분위기 하에서는 이러한 활성 감소를 상쇄하고도 남을 정도의 높은 $N_2O$ 분해활성을 나타냈으며 Ce 첨가비율에 따른 활성저하도 줄일 수 있어서 MMO 촉매의 물리적 안정성 증대를 위해 Ce을 첨가할 경우 CO 환원제에 의한 $N_2O$ 환원 반응계의 활성 안정성도 유지될 수 있는 것으로 확인되었다.

• 한국수소및신에너지학회논문집
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• 제18권2호
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• pp.109-115
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• 2007

Solar energy conversion to hydrogen was carried out via a two-step thermochemical water splitting using metal oxide redox pair. To simulate the solar radiation, a 7 kW short arc Xe-lamp was used. Partially reduced iron oxide and cerium oxide have the water splitting ability, respectively. So, $Fe_3O_4$ supported on $CeO_2$ was selected as the active material. $Fe_3O_4/CeO_2$(20 wt/80 wt%) was prepared by impregnation method, then the active material was washcoated on the ceramic honeycomb monolith made of mullite and cordierite. Oxygen was released at the reduction step($1673{\sim}1823\;K$) and hydrogen was produced from water at lower temperature($873{\sim}1273\;K$). The result demonstrate the possibility of the 2-step thermochemical water splitting hydrogen production by the active material washcoated monolith. And hydrogen and oxygen was produced separately without any separation process in a monolith installed reactor. But the SEM and EDX analysis results revealed that the support used in this experiment is not suitable due to the thermal instability and coating material migration.

• Corrosion Science and Technology
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• 제20권4호
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• pp.210-229
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• 2021

To safely operate domestic nuclear power plants approaching the end of their design life, the material degradation management strategy of the components is important. Among studies conducted to improve the soundness of nuclear reactor components, research methods for understanding the degradation of reactor internals and preparing management strategies were surveyed. Since the IGSCC (Intergranular Stress Corrosion Cracking) initiation and propagation process is associated with metal dissolution at the crack tip, crack initiation sensitivity was decreased in the hydrogenated water with decreased crack sensitivity but occurrence of small surface cracks increased. A stress of 50 to 55% of the yield strength of the irradiated materials was required to cause IASCC (Irradiation Assisted Stress Corrosion Cracking) failure at the end of the reactor operating life. In the threshold-stress analysis, IASCC cracks were not expected to occur until the end of life at a stress of less than 62% of the investigated yield strength, and the IASCC critical dose was determined to be 4 dpa (Displacement Per Atom). The stainless steel surface oxide was composed of an internal Cr-rich spinel oxide and an external Fe and Ni-rich oxide, regardless of the dose and applied strain level.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.255-263
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• 2022

The subthreshold swing (SS) of an asymmetric junctionless double gate (AJLDG) MOSFET is analyzed by the use of Gaussian function. In the asymmetric structure, the thickness of the top/bottom oxide film and the flat-band voltages of top gate (V_fbf) and bottom gate (V_fbb) could be made differently, so the change in the SS for these factors is analyzed with the projected range and standard projected deviation which are parameters for the Gaussian function. An analytical subthreshold swing model is presented from the Poisson's equation, and it is shown that this model is in a good agreement with the numerical model. As a result, the SS changes linearly according to the geometric mean of the top and bottom oxide film thicknesses, and if the projected range is less than half of the silicon thickness, the SS decreases as the top gate oxide film is smaller. Conversely, if the projected range is bigger than a half of the silicon thickness, the SS decreases as the bottom gate oxide film is smaller. In addition, the SS decreases as V_fbb-V_fbf increases when the projected range is near the top gate, and the SS decreases as V_fbb-V_fbf decreases when the projected range is near the bottom gate. It is necessary that one should pay attention to the selection of the top/bottom oxide thickness and the gate metal in order to reduce the SS when designing an AJLDG MOSFET.

• 한국위성정보통신학회논문지
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• 제10권2호
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• pp.90-94
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• 2015

본 연구에서는 Solution Process를 적용한 Strontium Oxide를 배향막으로 사용한 경우의 액정배향 특성에 대해서 연구하였다. Stronium Oxide 는 High K 물질로 배향막으로 사용할 경우 임계치 전압을 효율적으로 조절할 수 있는 장점이 있으나, 액정분자와의 배향에 관한 상호관계에 대해서는 많은 연구가 진행되지 않았었다. 0.1~0.4 Mol 롤 농도를 조절한 Strontium Oxide를 Solution Process 로 배향막으로서 제조함으로써, 보다 생산성이 좋은 방법을 제시할 수 있었으며, 재료가 갖는 우수한 특성을 반영한 액정디스플레이의 제조가 가능하였다. 샘플 측정결과 1.447~1.613V 의 임계치 전압특성을 보여주어 기존의 방법으로 제조된 액정디스플레 이와 동등 혹은 우월한 특성을 갖고 있음을 알 수 있었다.

• 접착 및 계면
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• 제12권4호
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• pp.133-137
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• 2011

그래파이트 옥사이드(GO)를 tetramethylammonium hydroxide (TMAOH)수용액을 이용하여 나노 크기로 분산되어 박리된 그래파이트 옥사이드(Exfoliated Graphite Oxide: EGO)를 제조하였다. 얻어진 EGO를 $Zn(NO_3)_2{\cdot}6H_2O$, $Al(NO_3)_3{\cdot}9H_2O$, urea, trisodium citrate의 혼합용액에 넣어 격렬히 교반 후 고압멸균기에서 열수 처리하여 동시에 환원된 그래핀(RGO)과 Zn-Al 이중층상 수산화물(LDH)의 나노 복합재료를 제조하였다. 즉, EGO의 표면에 두 개의 금속이온이 흡착된 후 열수처리 환원을 통하여 Zn-Al 이중층상 수산화물이 RGO의 표면에 자유롭게 성장하여 복합화 되었다. 얻어진 그래핀/Zn-Al LDH의 구조 및 형태와 열적 특성은 FE-SEM, EDX, TEM, FT-IR, XRD, TGA와 DSC를 통하여 분석하였다.