• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.386-387
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• 2005

anodic deposition법으로 제조된 $MnO_2$와 (Mn, Zn) 산화물의 전도도를 측정하였다. 제조된 Mn 산화물의 조성은 XRD와 EDS를 이용하여 $MnO_2$ 와 Mn 복합산화물로 확인되었다. DV-Xa법으로 계산된 이론 전자상태 계산 결과 천이금속을 첨가하게 되면, Mn 복합 산화물의 에너지 갭이 감소하는 것으로 나타났다. anodic deposition법으로 제조된 $MnO_2$와 Mn 복합 산화물의 전기전도도를 비교하면 천이금속이 첨가된 복합 산화물의 특성이 우수한 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.21-22
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• 2005

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.587-588
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• 2005

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Prospectives of Industrial Chemistry
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• v.23 no.3
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• pp.32-41
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• 2020

사람들은 대부분의 시간을 실내에서 보내고 있으며, 실내에 존재하는 유해가스는 미량의 농도에도 불구하고 심각한 질환을 일으킬 수 있다. 금속산화물 반도체 가스센서는 감도가 우수하고, 구조가 간단하며, 초소형화가 가능한 장점이 있어 고가의 대형 장비를 사용하지 않고 실내 유해가스를 측정하는 데 효과적으로 이용될 수 있다. 본 기고문에서는 금속산화물 반도체를 이용한 가스 센서의 검지 원리를 고찰하고, 나노 구조 조절, 마이크로 리액터 및 이중층 구조를 이용한 가스 개질 등 실내 유해가스 측정을 위한 다양한 센서 설계방법을 소개하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.3-6
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• 2003

This paper describes the interface stability of Ta-Mo alloy metal on $SiO_2$ Alloy was formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power. When the atomic composition of Ta was about 91%, the measured work function was 4.2eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy metal and $SiO_2$, C-V, FE-SEM(Field Emission-SEM), and XRD(X-ray diffraction) were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and $900^{\circ}C$. Even after $900^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.157-159
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• 2005

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.254-259
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• 2015

This paper reports the optimized mixed-signal performance of a high-voltage (HV) laterally double-diffused metaloxide-semiconductor (LDMOS) field-effect transistor (FET) with a dual gate oxide (DGOX). The fabricated device is based on the split-gate FET concept. In addition, the gate oxide on the source-side channel is thicker than that on the drain-side channel. The experiment results showed that the electrical characteristics are strongly dependent on the source-side channel length with a thick gate oxide. The digital and analog performances according to the source-side channel length of the DGOX LDMOS device were examined for circuit applications. The HV DGOX device with various source-side channel lengths showed reduced by maximum 37% on-resistance (R_ON) and 50% drain conductance (g_ds). Therefore, the optimized mixed-signal performance of the HV DGOX device can be obtained when the source-side channel length with a thick gate oxide is shorter than half of the channel length.

• Journal of Powder Materials
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• v.12 no.2 s.49
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• pp.112-116
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• 2005

In the present study, the focus is on the analysis of carbothermal reduction of oxide powder prepared from waste WC/Co hardmetal by solid carbon under a stream of argon for the recycling of the WC/Co hard-metal. The oxide powder was prepared by the combination of the oxidation and crushing processes using the waste $WC-8 wt.\%Co$ hardmetal as the raw material. This oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under a flowing argon atmosphere. The changes in the phase structure and gases discharge of the mixture during carbothermal reduction was analysed using XRD and gas analyzer. The oxide powder prepared from waste $WC-8wt.\%Co$ hardmetal has a mixture of $WO_{3} and CoWO_{4}$. This oxide powder reduced at about $850^{\circ}C$, formed tungsten carbides at about $950^{\circ}C$, and then fully transformed to a mixed state of tungsten carbide (WC) and cobalt at about $1100^{\circ}C$ by solid carbon under a stream of argon. The WC/Co composite powder synthesized at $1000^{\circ}C$ for 6 hours from oxide powder of waste $WC-8wt.\%Co$ hardmetal has an average particle size of $0.3 {\mu}m$.

• Journal of the Korean Electrochemical Society
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• v.21 no.3
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• pp.55-60
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• 2018

The demand for LIBs with higher energy densities has increased continuously because the emergence of wider and more challenging applications including HEV and EV has became imperative. However, in the case of anode material, graphite is insufficient to meet this need. To meet such demand, several type of negative electrode materials like silicon, tin, SiO, and transition metal oxide have been investigated for the advanced lithium secondary batteries. Recently, lithium vanadium oxide, which has a layered structure, is assumed as one of the promising anode material as alternative of graphite. This material shows a high volumetric capacity, which is 1.5 times higher than that of graphite. However, relative low electrical conductivity and particle fracture, which results in the electrolyte decomposition and loss of electric contact between electrode, induce rapid capacity decay. In this report, we investigated the effect of electrolyte additive on the electrochemical characteristics of lithium vanadium oxide.