• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.168-174
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• 2016

A conductive oxide-based sapphire glass indium tin oxide/metal electrode and the optical coating, through patterning process was studied in excellent optical properties and integrated touch panel has a high strength. Indium tin oxide conductive oxides of the sapphire glass to 0.3 A at DC magnetron sputtering method of 10 min, gas flow Ar 10 Sccm Ar, $O_2$ 1.0 Sccm the formation conditions of the thin film after annealing at $550^{\circ}C$ for 30min was achieved through a 86% transmittance. In addition, the coating 130 nm hollow silica sol-gel was to improve the optical transmittance of the indium tin oxide to 91%. For the measurement by the modeling hollow silica sol by Macleod simulation and calculated the average values of silica part to the presence or absence in analogy to actual. Refractive index value and the actual value of the material on the simulation the transmittance difference is it does not completely match the air region similar to the actual value (transmission) could be confirmed that the measurement is set to a value of between 5 nm and 10 nm.

• Applied Science and Convergence Technology
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• v.26 no.2
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.331-334
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• 1997

The electrical and physical charateristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analysed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin finns was improved. But these properties of aluminum oxide and Pt thin finns on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analysed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater. active area was smaller size, Pt micro heater had better thermal characteristics. Temperature of Pt micro heater fabricated on membrane was up to 34$0^{\circ}C$ with 1.2watts of the heating power due to reduction of the external thermal loss.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.507-511
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• 2024

Various process modifications have been used to minimize SiO₂ gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Corrosion Science and Technology
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• v.12 no.1
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• pp.7-11
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• 2013

High velocity oxy-fuel (HVOF) spray coating of WC-metal powder (powder) was carried out to improve the resistances of friction, wear and corrosion of magnetic bearing shaft material Inconel718 (In718) of turbo blower. A micron sized WC-metal powder (86.5% WC, 9.5% Co 4% Cr) was coated onto In718 surface using HVOF thermal spraying. During the spraying, the binder metals and alloy such as Co, Cr and Co-Cr alloy were molten and a small portion of WC particles were partially decomposed to $W_2C$ and free carbon at above its decomposition temperature of $1250^{\circ}C$. The free carbon and excessively sprayed oxygen formed carbon oxide gases, resulting a porous coating of porosity of $2.2{\pm}0.3%$. The surface hardness of substrate increased approximately three times from 400 Hv of In718 to $1260{\pm}30Hv$ of the coating The friction coefficients of the coating were approximately $0.33{\pm}0.03$ at $25^{\circ}C$ and $0.26{\pm}0.03$ at $450^{\circ}C$. These values were smaller than those of In718 substrate at both temperatures due to the lubrication from the free carbon and the cobalt oxide debris. The corrosion resistance of the coating was higher than that of In718 both in salt water of 3.5% NaCl and acid of 1 M HCl solutions, on the contrary, it was lower in base solution of 1 M NaOH. According to this study, the HVOF WC-metal powder coating is recommended for the durability improvement of magnetic bearing shaft of turbo blower.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.832-835
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• 2001

We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

• Journal of Environmental Science International
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• v.18 no.1
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• pp.61-72
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• 2009

Fabrication and oxidants production of 3 or 4 components metal oxide electrode, which is known to be so effective to destruct non-biodegradable organics in wastewater, were studied. Five electrode materials (Ru as main component and Pt, Sn, Sb and Gd as minor components) were used for the 3 or 4 components electrode. The metal oxide electrode was prepared by coating the electrode material on the surface of the titanium mesh and then thermal oxidation at $500^{\circ}C$ for 1h. The removed RhB per 2 min and unit W of 3 components electrode was in the order: Ru:Sn:Sb=9:1:1 > Ru:Pt:Gd=5:5:1 > Ru:Sn=9:1 > Ru:Sn:Gd=9:1:1 > Ru:Sb:Gd=9:1:1. Although RhB decolorization of Ru:Sn:Sb:Gd electrode was the highest among the 4 components electrode, the RhB decolorization and oxidants formation of the Ru:Sn:Sb=9:1:1 electrode was higher than that of the 3 and 4 components electrode. Electrogenerated oxidants (free Cl and $ClO_2$) of chlorine type in 3 and 4 components electrode were higher than other oxidants such as $H_2O_2\;and\;O_3$. It was assumed that electrode with high RhB decolorization showed high oxidant generation and COD removal efficiency. OH radical which is electrogenerated by the direct electrolysis was not generated the entire 3 and 4 components electrode, therefore main mechanism of RhB degradation by metal oxide electrode based Ru was considered indirect electrolysis using electrogenerated oxidants.

• Vacuum Magazine
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• v.5 no.2
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• pp.18-22
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• 2018

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.191-193
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• 2005

This study has investigated the effects of the etching method of a Ti substrate for a metal oxide electrode on the electrochemical characteristics of the electrode. The HCl etching develops a fine and homogeneous roughness on the Ti substrate. Fabrication and material properties of the catalytic oxide electrode, which is known to be so effective to destruct refractory organics in aqueous waste, were studied. A method to enhance the fabrication reproducibility of the oxide electrode was tested for Ru, Zr, Sn oxide on the Ti substrate using SEM, XRD, Cyclic voltammetry.