• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.189-192
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• 2001

Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.189-192
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• 2001

Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP process, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned Problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.2
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• pp.176-181
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• 2016

Recent years, supercapacitors have been attracting a growing attention as an efficient energy storage, due to their long-lifetime, device reliability, simple device structure and operation mechanism and, most importantly, high power density. Along with the increasing interest in flexible/stretchable electronics, the supercapacitors with compatible mechanical properties have been also required. A eutectic gallium-indium (EGaIn) liquid metal could be a strong candidate as a soft electrode material of the supercapacitors because of its insulating surface oxide layer for electric double layer formation. Here, we report the electrochemical study on the charging/reaction process at the interface of EGaIn liquid metal and electrolyte. Numerical fitting of the charging current curves provides the capacitance of EGaIn/insulating layer/electrolyte (${\sim}38F/m^2$). This value is two orders of magnitude higher than a capacitance of a general metal electrode/electrolyte interface.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.16-19
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• 2011

The oxide-nitride-oxide (ONO) deposition process was added to the beginning of a 0.25 ${\mu}m$ embedded polysiliconoxide-nitride-oxide-silicon (SONOS) process before all of the logic well implantation processes in order to maintain the characteristics of basic CMOS(complementary metal-oxide semiconductor) logic technology. The system subsequently suffered severe ONO rupture failure. The damage was caused by the ONO implantation and was responsible for the ONO rupture failure in the embedded SONOS process. Furthermore, based on the experimental results as well as an implanted ion's energy loss model, processes primarily producing permanent displacement damages responsible for the ONO rupture failure were investigated for the embedded SONOS process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Journal of Electrochemical Science and Technology
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• v.9 no.2
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• pp.93-98
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• 2018

$MnO_2$, a metal oxide used as an electrode material in electrochemical capacitors (EDLCs), has been applied in binary oxide and conducting polymer hybrid electrodes to increase their stability and capacitance. We developed a method for electrodepositing Mn-Ni oxide/PANI, Mn-Ni oxide/PEDOT, and Mn-Ni-Ru oxide/PEDOT films on carbon paper in a single step using a mixed bath. Mn-Ni oxide/PEDOT and Mn-Ni-Ru oxide/PEDOT electrodes used in an electro-osmotic pump (EOP) have shown better efficiency compared to Mn-Ni oxide and Mn-Ni oxide/PANI electrodes through testing in water as a pumping solution. EOP using a Mn-Ni-Ru oxide/PEDOT electrode was also tested in a 0.5 mM $Li_2SO_4$ solution as a pumping solution to confirm the effect of the $Li^+$ insertion/de-insertion reaction of Ruthenium oxide on the EOP. Experimental results show that the flow rate increases with the increase in current in a 0.5 mM $Li_2SO_4$ solution compared to that obtained when water was used as a pumping solution.

• Bulletin of the Korean Chemical Society
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• v.26 no.1
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• pp.103-106
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• 2005

In order to investigate the catalytic mechanism for the growth of carbon nanotubes (CNTs), a comprehensive study was conducted using carbon materials synthesized at 680 ${^{\circ}C}$ with a gas mixture of CO-H$_2$ after reduction at 800 ${^{\circ}C}$ by H$_2$ gas from iron oxide, and metal Pt. The resulting material was observed by scanning electron microscopy (SEM) and X-ray diffraction patterns (XRD) after a variety of reaction times. The carbon materials synthesized by metal Pt were little affected by reaction time and the sintered particles did not form CNTs. Xray analysis revealed that metal Fe was completely converted to iron carbide (Fe$_3$C) without Fe peaks in the early stage. After 5 min, iron carbide (Fe$_3$C) and carbon (C) phases were observed at the beginning of CNTs growth. It was found that the intensity of the carbon(C) peak gradually increased with the continuous growth of CNTs as reaction time increases. It was also found that the catalyst of growth of CNTs was metal carbide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.34-37
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• 2004

It is well known that Ag-CdO alloy for electrical contactor has been widely used in weak or middle electric current field. But it is necessary to decrease Cd contents without decrease of contactor property because Cd is harmful to human body. The present work has been carried out to investigate effects of Mm (misch metal) addition on the property of Ag-CdO alloy for electrical contactor. As the results of present works, hardness and strength was improved and arc resistance was improved, also, in spite of decrease Cd contents by the Mm addition. It was estimated that Ag-oxide particle was refined by Mm addition.