• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.345-350
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• 2018

Nanomaterials have considerable potential to solve several key challenges in various electrochemical devices, such as fuel cells. However, the use of nanoparticles in high-temperature devices like solid-oxide fuel cells (SOFCs) is considered problematic because the nanostructured surface typically prepared by deposition techniques may easily coarsen and thus deactivate, especially when used in high-temperature redox conditions. Herein we report the synthesis of a self-regenerated Pd metal nanoparticle on the perovskite oxide anode surface for SOFCs that exhibit self-recovery from their degradation in redox cycle and $CH_4$ fuel running. Using Pd-doped perovskite, $La(Sr)Fe(Mn,Pd)O_3$, as an anode, fairly high maximum power densities of 0.5 and $0.2cm^{-2}$ were achieved at 1,073 K in $H_2$ and $CH_4$ respectively, despite using thick electrolyte support-type cell. Long-term stability was also examined in $CH_4$ and the redox cycle, when the anode is exposed to air. The cell with Pd-doped perovskite anode had high tolerance against re-oxidation and recovered the behavior of anodic performance from catalytic degradation. This recovery of power density can be explained by the surface segregation of Pd nanoparticles, which are self-recovered via re-oxidation and reduction. In addition, self-recovery of the anode by oxidation treatment was confirmed by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국재료학회지
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• 제19권9호
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• pp.473-480
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• 2009

In order to provide the mechanism of nozzle clogging, recovered nozzles for high strength steel grade were examined carefully after continuous casting. The thickness of clogged material in SEN is increased in the following order: from the bottom to the top of the nozzle, upper part of slag line, and the pouring hole. Nozzle clogging material begins to form due the adhesion of metal to nozzle wall, the decarburization, and reduction of oxide in the refractory by Al and Ti in the melt. The reduction of oxide in the refractory by Al and Ti improves the wettability of the melt on the refractory and forms a thin Al-Ti-O layer. Metal containing micro alumina inclusions is solidified on the Al-Ti-O layer, and the solid layer grows due to the heat evolution through the nozzle wall. Thermodynamic calculation has been made for the related reactions. The effect of superheat to the nozzle clogging is discussed on ultra low carbon steel and low carbon steel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.12-12
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• 2010

Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on $SiO_2$/Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.159-162
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• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• 마이크로전자및패키징학회지
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• 제29권1호
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• pp.61-66
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• 2022

이 연구는 원자층 증착(Atomic Layer Deposition, ALD) 기술을 사용하여 나노미터 크기의 금속 촉매 물질을 연료극 층에 코팅하여 표면적을 늘리고 촉매의 효과를 극대화시키기 위한 연구이다. ALD 공정은 기판 위에 원자 수준에서 잘 제어된 두께를 갖는 균일한 막을 제조하는 것으로 알려져 있다. 우리는 고체산화물 연료전지의 연료극 물질로 가장 널리 알려진 Ni/YSZ 위에 금속(Ni)을 코팅하여 성능을 측정하였다. ALD 코팅은 3 nm 이상의 코팅에서 전지 성능의 감소를 보이기 시작했다

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.86-91
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• 2007

Contact material is widely used as electrical parts. Ag-CdO has a good wear resistance and stable contact resistance. But the disadvantages of Ag-Cd alloy are coarse Cd oxides and harmful metal, Cd. Then Ag-Sn alloy that has stable and fine Sn oxide at high temperature has been developed. In order to investigate the effect of Te additional that affects the formation of the oxide layer on the surface and the formation of oxide in matrix Ag, we studied the microstructures and properties of Ag-Sn-In(-Te) material fabricated by rapid solidification process. The experimental procedure were melting using high frequency induction, melt spinning, and internal oxidation. Specimens were examined and analyzed by Transmission electron microscopy(TEM), energy dispersive X-ray spectroscopy(EDS) and Vickers hardness. As a result, internal oxidation was completed even at $600^{\circ}C$. Te forms coarse $In_{2}TeO_{6}$ phase and makes fine and well dispersed $SnO_{2}$ Phase. 0.3 wt% Te shows favorable properties.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.980-983
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• 2002

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.