• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.1-10
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• 1990

Metal-Organic Vapor Phase Epitaxy (MOVPE) is an epitaxial process utilizaing ane or more of organometallice as reactnte to grow compound semicond semiconductror layers. MOVPE is basically a cold wall process in which reactants are delivered without reacting with each other to the heated substrate where reactants are thermally decomposed to from compound semiconductors through chemical reaction. Since reactants are delivered as gas phase and the formation of the single crystal compunds depends on the thermal decomposition of the reactants, details of MOVPE relies on the hydrodynamics and pyroltsis and chemical reation of reactants inside on reaction chamber. It has been demonstrated that MOVPE is capable of growing virtually all of the III-V, II-VI and IV-VI compound semiconductrs, fabricating ultrathin epilayers, for ming abrupt hetrointerfaces with monolayer transition width, and is suitable for multi-wafer operation yilding a high throghtput. Overiew of reactror componts and layer, characteristics, and status of MOVPE are discussed.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.139-142
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• 2017

In this paper, InP-based InGaAs/InAlAs quantum cascade lasers(QCLs) providing nearly zero emission wavelength mismatch between the measured emission wavelength and the designed transition wavelength of QCLs is presented. The zero emission wavelength mismatch of QCLs influenced by both the accurate compositions and thicknesses of the low-pressure metal-organic vapor-phase epitaxy(MOVPE) grown InGaAs and InAlAs layers throughout the core and the abrupt composition transitions between InGaAs and InAlAs layers. The abrupt interfaces between InGaAs and InAlAs layers have been achieved throughout the core structure by means of controlling individually purged vent/run valves of a closed coupled showerhead reactor. In addition, maintaining substrate temperature constant during InGaAs/InAlAs core growth was a partial factor of uniformity improvement of QCLs. These approaches for reducing the possible discrepancies between the designed and MOVPE grown epitaxial structures could lead to improvement of QCL performance.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.348-352
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• 2016

In this paper, GaN film was grown on AlN/PSS by hydride vapor phase epitaxy compared with GaN on planar sapphire. Thin AlN layer for buffer layer was deposited on patterned sapphire substrate (PSS) by metal organic chemical vapor deposition. Surface roughness of GaN/AlN on PSS was remarkably decreased from 28.31 to 5.53 nm. Transmittance of GaN/AlN grown on PSS was lower than that of planar sapphire at entire range. XRD spectra of GaN/AlN grown on PSS corresponded the wurzite structure and c-axis oriented. The full width at half maximum (FWHM) values of ${\omega}$-scan X-ray rocking curve (XRC) for GaN/AlN grown on PSS were 196 and 208 arcsec for symmetric (0 0 2) and asymmetric (1 0 2), respectively. FWHM of GaN on AlN/PSS was improved more than 50% because of lateral overgrowth and AlN buffer effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.37-37
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• 2003

Ferroelectric random acess memories (FeRAMs) 재료로 주목받고 있는 강유전 물질은 이미 여러 해 전부터 많은 물질들에 대해 연구가 진행되어 왔다. 그 중 낮은 공정 온도를 가지며 큰 remanent polarization 값을 갖는 lead zirconium titanate (PZT) 박막에 대해 많은 연구가 진행되고 있다. 하지만 Pt 기판위에 증착된 PZT 박막은 높은 피로 현상을 보이는 문제가 있다. 최근 Pulsed laser deposition이나 metal-organic vapor phase epitaxy (MOVPE) 등의 방법에 의해 epitaxial substituted-$Bi_4Ti_3O_{12}$ (La, Nd) 박막에 대해 보고가 되고 있다. 본 연구에서는 높은 remanent polarization 값을 갖는 $(Bi,Ce)_4Ti_3O_{12}$ (BCT) 박막을 pulsed laser deposition 방법을 사용하여 증착하였다. 또한 Bismuth의 양을 변화시켜 Bismuth의 양에 따른 remanent polarization의 변화를 확인하여 보았다. 사용된 기판은 Pt/$TiO_2$/$SiO_2$/Si 기판을 사용하였다.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.139-142
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• 2002

Contactless electroreflectance measurements at room temperature were used to determine the bandgap energies of Zn$_{1-x}$ Mg$_{x}$O thin films grown by metal-organic vapor phase epitaxy. It is found that the bandgap energy increases monotonically with the Mg composition x, up to the highest composition measured (x=0.45). The obtained correlation between the bandgap energy and the Mg composition can be used in the analysis of the electronic structure of ZnO/Zn$_{1-x}$ Mg$_{x}$O heterostructures at room temperature.ature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.