• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.135-138
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• 2009

$64{\times}1$ forcal plane infrared detector has been fabricated by using HgCdTe epi layer. HgCdTe was grown on GaAs substrate by using metal organic chemical vapor deposition. This paper describes key developments in the epi layer growth and device fabrication process. The performance of IR imaging system is summarized.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1263-1269
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• 1996

반도체 메모리 소자에 이용되는 하부전극의 Pt 박막을 MOCVD 증착방법을 이용하여 SiO2(100nm)/Si 기판위에 증착하였다. 반응개스로 O2개스를 사용하였을 경우에 순수한 Pt 박막을 얻었으며 증착층은(11)우선방향을 가지고 성장하였다. 증착온도가 45$0^{\circ}C$에서는 결정립 경계에 많은 hole이 형성되어 박막의 비저항을 증가시켰다. MOCVD에 의해 얻어진 Pt 박막은 전 증착온도범위에서 인장응력을 가지고 있었으며 40$0^{\circ}C$이상의 온도에서 hole이 형성되면서 응력은 감소하였다. MOCVD-Pt 위에 PEMOCVD로 증착한 강 유전체 SrBi2Ta2O9박막은 균일하고 치밀한 미세구조를 보였다.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.127-130
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• 2006

사파이어 기판위에 MOCVD (metal organic chemical vapor deposition)를 이용하여 8주기의 InGaN/GaN 다중양자우물(multiple quantum well : MQW)구조가 성장되어졌고 이 구조 위에 p-GaN층이 형성됐다. 다시 p-GaN 위에 200nm의 두께를 갖는 PMMU 박막을 도포하고 electron beam lithography system을 이용하여 직경이 150nm가 되도록 나노단위의 삼각격자 구조를 가진 구멍을 패턴하고 inductively coupled plasma(ICP)를 이용하여 식각을 하여 광결정을 제작하였다. 광결정은 두께가 26nm이고 격자간격은 460nm로서 파장이 450nm인 파란빛을 나노회절 시켜서 photoluminescence(PL)의 세기를 강화시킨다.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.39-43
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• 2004

The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.

• Journal of the Korean institute of surface engineering
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• v.31 no.2
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• pp.109-116
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• 1998

Highly transparent conductive pure and fluorine-doped tin oxide(FT0, $SnO_2$ : F) films have been prepared by low pressure metal organic chemical vapor deposition (LP-MOCVD) from various mixtures of tetramethyitin(TMT) with oxygen or oxygen containing ozone. The properties of TO films have been changed with the variation of gases, flow rate, and substrate temperature. The nsing of oxygen containing ozone instead of pure oxygen, reduced substrate temperature by 100-$150^{\circ}C$ while maintaining same thickness. The films prepared by using ozone showed the resistivity in the range from $10^~2$ to $10^{~3}\Omega$cm, and the mobiiity from 10 to $14\textrm{cm}^2$/Vs. Fluorine-doped tin oxide films had properties such as the resistivity about $10^{-4}\Omega$cm, and the mobility from 14 to $19\textrm{cm}^2$/Vs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.700-702
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• 2009

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.

• Korean Journal of Crystallography
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• v.9 no.2
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• pp.131-137
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• 1998

결정결함의 밀도가 낮은 GaN epitaxy 막을 MOCVD(metal organic chemical vapour deposition) 방법에 의해 성장시켰다. 기판은 6H-SiC를 사용하였으며, AlN과 GaN으로 구성된 이중 buffer 층을 도입하였다. GaN buffer 층은 반응원료인 trimethyl gallium(TMG)과 NH3 가스를 교호식펄스공급(alternating pulsative supply, APS)방법에 의해 만들었다. AlN buffer/6H-SiC 위에 초기단계에 형성되는 GaN 섬은 APS처리에 의해 크기가 커지는 것을 AFM(atomic force microscope)으로 관찰하였다. Buffer 층의 역할은 그 위에 성막시킨 GaN epitaxy 막의 결정성과 결함밀도에 의해 조사하였다. 성막된 GaN의 결정구조와 결정성은 DCXRD(double crystal X-ray diffractormeter)에 의해 측정되었다. 결정결함은 EPD(etching pit density)를 측정하는 방법으로 알칼리혼합용에서 처리된 막을 SEM(scanning electron microscope)으로 관찰하였다.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.1-5
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• 2005

Electon spin resonance measurements have been performed on the Mg-doped wurtzite GaN thin films grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition. The sample set included films as-grown with the regular Mg doped and Mg delta doped samples and the corresponding annealed ones. The resonance signal has been observed from the annealed Mg delta-doped sample with the Lande g value of 2.029. This indicates that the singlet resonance signal originates from the neutral Mg acceptor located at 0.24 eV above the valence band edge and 0.13 eV above the Fermi level because of the nuclear hyperfine spin 1=0 of Mg and the larger value than the free electron g=2.0023.