한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Fabrication of epitaxial ZnO layers on MOCVD-ZnO/(01-12) sapphire by chemical vapor transport

  • Hong, Sang-Hwui (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
  • Kato, Kenichi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
  • Mimura, Kouji (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
  • Uchikoshi, Masahito (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
  • Abe, Seishi (The Research Institute for Electric and Magnetic Materials) ;
  • Isshiki, Minoru (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
  • Published : 2009.10.12
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Abstract

We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.

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