• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2002년도 춘계학술발표대회 논문집
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• pp.61-64
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• 2002

Fiber reinforced metal laminate(FRML) consists of alternations layers of metal and fiber reinforced composite. The difference in the coefficients of thermal expansion between metal and composite layer produces remarkable amount of thermal residual stresses between layers. Generally, FRML shows a tensile stress in metal layers, a compressive stress in composite layers after curing. In this study, the thermal residual stresses of several types of FRML are investigated to get the best combination of metal and composite which can reduce the thermal residual stresses. The residual stress level is compared with the strength of each layers to explain the fracture mechanism of FRML.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권3호
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• pp.322-330
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• 2014

New effective techniques to repair "small" design errors in integrated circuits are presented. As semiconductor chip complexity increases and the design period becomes tight, errors frequently remain in a fabricated chip making revisions required. Full mask revision significantly increases the cost and time-to-market. However, since many "small" errors can be repaired by modifying several connections among the circuit blocks and spare cells, errors can frequently be repaired by revising metal layers. Metal only revision takes significantly less time and involves less cost when compared to full mask revision, since mask revision costs multi-million dollars while metal revision costs tens of thousand dollars. In our research, new techniques are developed to further reduce the number of metal layers to be revised. Specifically, we partition the circuit blocks with higher error probabilities and extend the terminals of the signals crossing the partition boundaries to the preselected metal repair layers. Our partitioning and pin extension to repair layers can significantly improve the repairability by revising only the metal repair layers. Since pin extension may increase delay slightly, this method can be used for non-timing-critical parts of circuits. Experimental results by using academia and industrial circuits show that the revision of the two metal layers can repair many "small" errors at low-cost and with short revision time. On the average, when 11.64% of the spare cell area and 24.72% of the extended pins are added to the original circuits, 83.74% of the single errors (and 72.22% of the double errors) can be corrected by using two metal revision. We also suggest methods to use our repair techniques with normal commercial vender tools.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1015-1018
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• 2004

We investigate the influence of the New Electron Injection Layers (EIL) on the performance of the Alkali Metal Complex vapor-deposited Organic Light Emitting Diodes(OLED). Two different Alkali Metal Complex were used; Lithium Quinolate (Liq), and Sodium Quinolate (Naq). In all cases, $Alq_3$ was the Electron Transporting Layer (ETL). We measure and compare the current density-voltage (J-V) and luminance-voltage (L-V) characteristics. We concluded that the turn-on voltage, and luminance efficiency are controlled by the type of EIL material used. We show the longer life-time OLED with Alkali Metal Complex EIL than OLED with LiF EIL. And we show the Optimized Alkali Metal Complex thickness is 3nm. Existent LiF to because is inorganic material, there is trouble to do epitaxy into thin layers but regulates the thickness in case of Alkali Metal Complex matter characteristic that is easy be. Alkali Metal Complex also appeared by sensitive thing in thickness than LiF If utilize this material, It is thought much advantages may be at common use of OLED.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.975-978
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• 2005

Electron injection in OLED organic layers is improved by using alkali metals as cathode layer or as dopants inside organic layers. An innovative alkali metal dispensing technology has been developed to overcome handling problems and to ensure controlled and reliable alkali metal layers for OLED.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.552-556
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• 1997

The Direct Metal Prototyping(DMP), one of the rapid prototyping technologies, allows the manufacturing of three-dimensional metallic parts using metal powders directly from the CAD data. Laser power and scanning speed are the most important variables of the process. The objective of this study is to obtain the design data for laser power and scanning speed to bond metal powders effectively using the finite element method. To obtain the design values, a numerical analysis considering two-dimensional heat transfer during the sintering of metal powder layers of the process was performed. The laser beam has been modeled to have directionality in its heat flux distribution, i. e., in the scanning direction a Gaussian beam mode distribution has been assumed and in the thickness direction a square beam mode distribution. The three-dimensional irregular distribution of metal powders of the powder layer is idealized as two-dimensional distribution in which metal powders are located regularly and periodically on the plate. In this study the design values of laser power vs scanning speed have been obtained. Temperature distribution and temperature variation of the powder layers with respect to time have been predicted. The commputed dsign data will be useful in determining the initial conditions of the process.

• 한국결정성장학회지
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• 제23권4호
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• pp.161-166
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• 2013

실리콘 기판 위에 GaN를 성장하기 위해서 AlN 완충층을 사용해 왔다. 그러나 AlN은 아직까지 high doping이 쉽지 않기 때문에, 이로 인해 AlN를 전자소자나 광소자 제작을 위한 완충층으로 이용하는 경우 직렬 저항의 증가라는 문제가 발생할 수 있다. 본 연구에서는 이러한 문제점을 개선하기 위해 AlN 완충층 대신에 금속 완충층을 사용하여 실리콘 기판 위에 GaN 박막 성장실험을 수행하였다. Al, Ti, Cr 그리고 Au 등을 금속 완충층으로 사용하여 실리콘 기판 위에 GaN 층을 성장하였다. 성장된 GaN 박막의 표면 특성을 분석하기 위해 광학현미경과 SEM을 사용하였고, 결정성과 광학적 특성을 평가하기 위하여 PL과 XRD 분석을 실시하였으며 AlN 완충층을 사용한 경우와 금속 완충층을 사용한 경우의 저항 차이를 확인하기 위하여 전류-전압 특성을 측정하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.204-206
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• 1993

In this paper we represented electroplating process without seed layers for making metal micro structures needed for applying terminal voltage for one-to-one cell fusion system. In this system, we need thick insulator and metal structures because the diameter of a cell is approximately $40{\mu}m$. So, we adopted the photo-sensitive polyimide as electroplating molds and structural material. Generally, the processes utilizing the photo-sensitive polyimide as molds have metal seed layers on the substrate as electroplating electrodes and requires wiring tasks to these seed layers. We proposed electroplating process without any seed layer on the Si-substrate and simulated P-N-P (electrode - Si substrate - electrode) junction on N-type silicon substrate. Leakage current from one metal structure to another which arise when terminal voltage is applied can be remarkably decreased by doping Boron in the region to be electroplated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.26-29
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• 2004

High density plasma fluorinated silicate glass (HDP FSG) is used as a gap fill film for metal-to-metal space because of many advantages. However, FSG films can cause critical problems such as bonding issue of top metal at package, metal contamination, metal peel-off, and so on. It is known that these problems are caused by fluorine penetration out of FSG film. To prevent it, FSG capping layers such like SRO (Silicon Rich Oxide) are needed. In this study, their characteristics and a capability to block fluorine penetration for various FSG capping layers are investigated. Normal stress and High stress due to denser film. While heat treatment to PETEOS caused lower blocking against fluorine penetration, it had insignificant effect on SiN. Compared with other layers, SRO using ARC chamber and SiN were shown a better performance to block fluorine penetration.