• Title/Summary/Keyword: Metal foil

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Heat Flow Studies in Low Temperature Detectors (저온검출기의 열전도 연구)

  • Kim, Il-Hwan;Lee, Min-Kyu;Kim, Yong-Hamb
    • Progress in Superconductivity
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    • v.12 no.1
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    • pp.41-45
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    • 2010
  • Low temperature micro-calorimeters have been employed in the field of high resolution alpha spectrometers. These alpha detectors typically consist of a superconducting or metal absorber and a temperature sensor. The temperature sensor can be a transition edge sensor (TES), a metallic magnetic calorimeter (MMC) or other low temperature detectors for an accurate measurement of temperature change due to an alpha particle absorption. We report a recent study of the heat flow between a replaceable absorber and a temperature sensor. A piece of gold foil in $2.4{\times}2.7{\times}0.03\;mm^3$ is used as an absorber. A $40\;{\mu}m$ diameter Au:Er paramagnetic sensor is attached to another small piece of gold foil in $400{\times}200{\times}30\;{\mu}m^3$ to serve as the temperature sensor. This sensor assembly, Au:Er and gold foil, is placed on a miniature SQUID susceptometer in a gradiometric configuration. The thermal connection between the absorber and the sensor was made with three gold bonding wires. The measured thermal conductance shows a linear dependence to the temperature. The values are in a good agreement with Wiedemann-Franz type thermal conductance of the gold wires.

Thin Film Energy Storage Device with Spray-Coated Sliver Paste Current Collector

  • Yoon, Seong Man;Jang, Yunseok;Jo, Jeongdai;Go, Jeung Sang
    • ETRI Journal
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    • v.39 no.6
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    • pp.874-879
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    • 2017
  • This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass-manufacturable spray-coating technology enables the fabrication of two different half-cell electric double layer capacitors (EDLC) with a spray-coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half-cell EDLC with the spray-coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half-cell EDLC with the spray-coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from -0.5 V to 0.5 V, the spray-coated thin film energy storage device exhibits a better performance.

Comparison of bracket bond strength in various directions of force (교정용 브라켓에 가해지는 힘의 방향에 따른 결합강도의 비교)

  • Lee, Hyun-Jung;Lee, Hyung-Soon;Jeon, Young-Mi;Kim, Jong-Ghee
    • The korean journal of orthodontics
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    • v.33 no.5 s.100
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    • pp.359-370
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    • 2003
  • The purpose of this study was to evaluate the bond strength of orthodontic brackets bonded to metal bar with chemically cured adhesive (Ortho-one, Bisco Co, USA) in various types and directions of force application. Three types of metal bracket with different bracket base configurations; Micro-Loc base(Tomy Co, Japan), Chessboard base(Daesung Co, Korea), Non-etched Foil-Mesh base(Dentaurum, Germany); were used in this study. Peel, shear, tensile bond strengths were measured by universal testing machine and compared each other. The peel force directions applied were $0^{\circ},\;15^{\circ},\;30^{\circ},\;45^{\circ},\;60^{\circ},\;75^{\circ},\;90^{\circ}$ And then, in consideration of the different surface area of the bracket bases, the bond strength Per unit area were calculated and compared. The results obtained were summarized as follows: 1. The bond strengths according to the types and the directions of the forces were greatest at the shear forces in all three bracket base configuration groups(p<0.01). 2. As the peel force direction grew higher in degree, peel bond strength decreased. The Patterns of peel bond strength change according to force direction was similar in all three bracket base configurations. The minimum bond strength was 60 degree-peel bond strengths in all three bracket base configurations. 3. In Micro-Loc base group, minimum peel bond strength$(_{60}PBS)$ was in $29\%$ level of shear bond strength and $52\%$ level of tensile bond strength. In Chessboard base group, $_{60}PBS$ was in $34\%$ level of shear bond strength and $61\%$ level of tensile bond strength. In Non-etched Foil-Mesh base group, $_{60}PBS$ was in $34\%$ level of shear bond strength and $55\%$ level of tensile bond strength. 4. The bond strengths per unit area were lowest in Non-etched Foil-Mesh base group and highest in Chessboard base group(p<0.05). However, there were no differences in shear bond strength, tensile bond strength, $75^{\circ}\;and\;90^{\circ}$ per unit area between Micro-Loc and Chessboard base groups.

A Study on the Development and Characteristics of Strain Gauge using Sputter Machining (스파타가공법을 이용한 스트레인 게이지의 개발 및 특성에 관한 연구)

  • Han, E.K.;Rho, B.O.;Lee, M.H.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.9 no.2
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    • pp.50-60
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    • 1989
  • The control of resistance of foil strain gauge is accomplished by means of etching technique. Thus, there is an irregularity in metal foil. In order to solve this problem, ion sputter machining method has been used to make strain gauge in this study and the characteristics of this strain gauge are investigated. As the result of this study, it was possible to make a flexible strain gauge which can be used to measure the stress. The strain gauge made by authors shows superior characteristics in creep, O point variance, hysteresis and nonlinearity by surrounding temperature.

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Fabrication of One-Dimensional Graphene Metal Edge Contact without Graphene Exfoliation

  • Choe, Jeongun;Han, Jaehyun;Yeo, Jong-Souk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.371.2-371.2
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    • 2016
  • Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

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Anodizing of pure Al foil for AAO as a Nanowire Template (Al 양극산화에 의한 나노선재용 AAO template제조)

  • Lee Kwan Hyi;Lee Hwa Young;Jeung Won Young
    • Journal of the Korean Electrochemical Society
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    • v.4 no.2
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    • pp.47-52
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    • 2001
  • AAO template having nano scale pores of high aspect ratio has been prepared through anodizing of aluminum foil in sulfuric acid electrolyte. The effect of anodizing parameters on the pore size and distribution was also examined to obtain the proper AAO as a template material of nanowire. The surface of AAO template prepared was observed by SEM to examine the mean size and distribution of pores generated by the anodizing and Fe nanowires obtained by AC electroforming using AAO template were also observed with TEM to determine the length and shape of them. From the results of work, it was found that the mean size or distribution of pores was influenced significantly by the anodizing parameters such as voltage and temperature of electrolyte. Mean length and aspect ratio of Fe nanowires prepared in the work were found to be $10{\mu}m\;and\;300\;to\;1,000$, respectively.

The Study of Fast X-ray Fluorescence Analysis Using a SSQ Program (SSQ 프로그램을 이용한 빠른 X-선형광분석법 고찰)

  • Park, Yong Joon
    • Analytical Science and Technology
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    • v.11 no.2
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    • pp.112-119
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    • 1998
  • A Siemens SemiQuant (SSQ) 3000 program, a precalibrated 'standardless' analytical program handling up to 90 elements, was evaluated for the fast analysis of various types of reference materials using a wavelength dispersive X-ray spectrometer. Various types of standard reference materials such as metal discs, metal chips, and geological materials in powder form were analysed and it took 23 minutes of measuring time for 75 elements. Measurements of geological reference materials using different sampling methods were carried out and their data were interactively evaluated. The analysis of materials of a known matrix concentration such as stainless steels provided higher precision value compared to totally unknown samples. The analyses of materials prepared as pressed pellets or fused glass beads provided higher precision values compared to the measurement of loose powders with a foil on the sample surface and helium operation, though their sampling procedures were more complicate and took more time. Since very light elements such as boron, carbon, and oxygen have a strong influence on the matrix effects and also on the calculation of effective matrix corrections, the rhodium Compton check was applied to verify the reliability of the defined light element concentrations of light matrix materials and the defined major sample compounds. Failure of defining correct matrix resulted in an unoptimized matrix correction and therefore in the wrong calculation of the element concentration.

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Co-firing of PZT/metal foil laminates for MIM structured device fabrication

  • Kim, Baek-Hyeon;Bae, Hyeon-Jeong;Gwon, Do-Gyun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.82.2-82.2
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    • 2012
  • 캐패시터, 액추에이터와 같이 MIM (Metal-Insulator-Metal) 구조를 갖는 디바이스는 높은 소결온도를 갖는 세라믹 유전체/압전체와 고온 내산화성이 낮은 금속 전극의 적층 형태로 인하여 동시 열처리 공정에 있어서 많은 제약이 따른다. 본 연구에서는 소결온도를 대폭 낮춘 저온 소결용 PZT 압전체 테이프를 니켈 금속 포일에 적층하여 동시 열처리를 통하여 소결을 시도하였다. 동시 열처리된 MIM 디바이스의 세라믹과 금속 전극 계면의 미세구조 및 성분 분석을 통하여 계면 반응 기구를 확인하였고, 계면 반응층이 디바이스의 특성에 미치는 영향에 대한 정량적 분석을 수행하였다. 또한 열처리 시간에 따른 계면 반응층의 변화를 관찰하고 반응층의 변화가 특성에 미치는 영향을 분석하였다. 니켈 이외에 니켈 합금인 INCONEL 718과 PZT 세라믹과의 동시 소성을 시도하여 니켈, INCONEL 두 금속 기판과 PZT 사이에 생성되는 계면 반응층의 미세구조와 특성의 차이점을 비교하였고 디바이스로서 사용하기 위한 적합성 여부를 확인하였다.

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Porous SnO2 Films Fabricated Using an Anodizing Process (양극산화법에 의한 다공성 SnO2 피막)

  • Han, Hye-Jeong;Choi, Jae-Ho;Min, Seok-Hong
    • Korean Journal of Materials Research
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    • v.16 no.8
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    • pp.503-510
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    • 2006
  • The measurement of specific gases is based on the reversible conductivity change of sensing materials in semiconductor type gas sensors. For an application as gas sensors of high sensitivity, porous $SnO_2$ films have been fabricated by anodizing of pure Sn foil in oxalic acid and characteristics of anodic tin oxide films have been investigated. Pore diameter and distribution were dependent on process conditions such as electrolyte concentration, applied voltage, anodizing temperature, and time. Characteristics of anodic films were explained with current density-time curves.

A substrate bias effect on the stability of a-Si:H TFT fabricated on a flexible metal substrate

  • Han, Chang-Wook;Nam, Woo-Jin;Kim, Chang-Dong;Kim, Ki-Yong;Kang, In-Byeong;Chung, In-Jae;Han, Min-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.257-260
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    • 2007
  • Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

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