• Bulletin of the Korean Chemical Society
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• v.32 no.2
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• pp.434-438
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• 2011

Polycrystalline $CuInSe_2$ (CIS) was synthesized through solvothermal reactions in toluene with selected alkyl amines as complexing agents. The alkyl amines were used as reducing agent of selenium and catalytic ligands, enhancing the formation of CIS compounds in the colloidal solution. Toluene does not contribute the syntheses directly but minimizes the amounts of amines required for single phase CIS. We systematically studied the reactivity of amine compounds for the solovothermal syntheses, determined critical concentration of amine and the shortest reaction time. Crystallinity, morphology, chemical composition, and band gap of the prepared $CuInSe_2$ were respectively measured by X-ray diffraction, scanning electron microscopy, inductively coupled plasma atomic emission spectroscopy and UV-vis spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.166-166
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• 2000

We studied electronic structure of magnetic semiconductors EuO, EuS, and EuTe. The photoemission spectra show localized Eu 4f states and broad anion p bands. As the size of anion increases from oxygen to tellurium, anion p band width increases and eventually overlaps Eu 4f states. Hence in EuO and EuS, Eu 4f states are the highest occupied stated lying above anion p band, while Te 5p band spreads widely over Eu 4f states to become valence band maximum in EuTe. It was also observed that Eu 4f states have width of 0.7eV and dispersion of 0.2eV in EuS by angle resolved photoemission spectroscopy. The width of the 4f spectra mainly originates from atomic multiplets, but the much larger dispersion than that of Eu metal is due to p-f mixing.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.64-74
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• 1994

The nonstoichiometric chalcogenides with NaCl-type structure were prepared and the physical and structural properties were studied. The homogeneous range and the structural change were studied based on X-ray powder diffractions using Rietveld-type full-profile fitting technique. Wide homogeneous ranges were observed in Y-S and Y-Se systems, and relatively narrow homogeneous ranges were observed in Yb-S and Yb-Se systems. Both in $Yb_{1-x}S\;and\;Yb_{1-x}Se$, a vacancy ordering transition occurred in (111) plane direction. The ordered superstructure had cubic symmetry(Fm$\bar{3}m) with doubled unit cell "a" parameter compared to the original NaCl-type. The superlattice developed in a continuous second-order transitiion was characterized by the reduced waved vector k= $(a^*+b^*+c^*)/2$. Y-S system had metallic, and YSe, YbSe system had semiconducting properties in their homogeneous ranges. It was observed that the change of electronic transport properties in extended homogeneous range did not depend on the relativeratio of metal to nonmetal, but on the quantities of vacancies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Clean Technology
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• v.29 no.3
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• pp.178-184
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• 2023

Transition metal chalcogenides have garnered significant attention as anode materials for sodium-ion batteries due to their high theoretical capacity. Nevertheless, their practical application is impeded by their limited lifespan resulting from substantial volume expansion during cycling and their low electrical conductivity. To tackle these issues, this study devised a solution by synthesizing a nanostructured anode material composed of porous CNT (carbon nanotube) spheres and (Ni,Co)Se₂ nanocrystals. By employing spray pyrolysis and subsequent heat treatments, a porous-structured (Ni,Co)Se₂-CNT composite microsphere was successfully synthesized, and its electrochemical properties as an anode for sodium-ion batteries were evaluated. The synthesized (Ni,Co)Se₂-CNT microsphere possesses a porous structure due to the nanovoids that formed as a result of the decomposition of the polystyrene (PS) nanobeads during spray pyrolysis. This porous structure can effectively accommodate the volume expansion that occurs during repeated cycling, while the CNT scaffold enhances electronic conductivity. Consequently, the (Ni,Co)Se₂-CNT anode exhibited an initial discharge capacity of 698 mA h g^-1 and maintained a high discharge capacity of 400 mA h g^-1 after 100 cycles at a current density of 0.2 A g^-1.

• Bulletin of the Korean Chemical Society
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• v.26 no.8
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• pp.1260-1264
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• 2005

Three new quaternary tantalum thiophosphates, $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ have been synthesized by using reactive alkali metal halide fluxes and structurally characterized by single crystal X-ray diffraction techniques. The crystal structures of $K_{0.18}TaPS_6,\;K_{0.28}TaPS_6,\;and\;Rb_{0.09}TaPS_6$ contain 3-dimensional open framework anions, $[TaPS_6]^{x-}$(x = 0.09, 0.18, 0.28) with the empty channel which disordered alkali metal cations, $K^+\;and\;Rb^+$ are located in. Crystal data: $K_{0.18}TaPS_6$, tetragonal, space group$I4_1$/acd (no. 142), a=15.874(3) $\AA$, c=13.146(4) $\AA$, V=3312.7(12) ${\AA}^3$, K, Z=16, R1=0.0545. Crystal data: $K_{0.28}TaPS_6$, tetragonal, space group $I4_1$/acd (no. 142), a=15.880(2) $\AA$, c=13.134(3) $\AA$, V=3312.1(10) ${\AA}^3$, Z=16, R1=0.0562. Crystal data: $Rb_{0.09}TaPS_6$, tetragonal, space group I41/acd (no. 142), a=15.893(3) $\AA$, c=13.163(4) $\AA$, V=3324.7(15) ${\AA}^3$, Z=16, R1=0.0432.

• Journal of Powder Materials
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• v.30 no.5
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• pp.387-393
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• 2023

Transition metal chalcogenides are promising cathode materials for next-generation battery systems, particularly sodium-ion batteries. Ni₃Co₆S₈-pitch-derived carbon composite microspheres with a yolk-shell structure (Ni₃Co₆S₈@C-YS) were synthesized through a three-step process: spray pyrolysis, pitch coating, and post-heat treatment process. Ni₃Co₆S₈@C-YS exhibited an impressive reversible capacity of 525.2 mA h g^-1 at a current density of 0.5 A g^-1 over 50 cycles when employed as an anode material for sodium-ion batteries. However, Ni₃Co₆S₈ yolk shell nanopowder (Ni₃Co₆S₈-YS) without pitch-derived carbon demonstrated a continuous decrease in capacity during charging and discharging. The superior sodium-ion storage properties of Ni₃Co₆S₈@C-YS were attributed to the pitch-derived carbon, which effectively adjusted the size and distribution of nanocrystals. The carbon-coated yolk-shell microspheres proposed here hold potential for various metal chalcogenide compounds and can be applied to various fields, including the energy storage field.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.440-440
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• 2012

Nanomaterials have emerged as new building blocks to construct light energy harvesting assemblies. Size dependent properties provide the basis for developing new and effective systems with semiconductor nanoparticles, quantized charging effects in metal nanoparticle or their combinations in 2 and 3 dimensions for expanding the possibility of developing new strategies for photovoltaic system. As top-down approach, we developed a simple and effective method for the large scale formation of self-assembled Cu(In,Ga)$Se_2$ (CIGS) nanostructures by ion beam irradiation. The compositional changes and morphological evolution were observed as a function of the irradiation time. As the ion irradiation time increased, the nano-dots were transformed into a nano-ridge structure due to the difference in the sputtering yields and diffusion rates of each element and the competition between sputtering and diffusion processes during irradiation. As bottom-up approach, we developed the growth of CIGS nanowires using thermal-chemical vapor deposition (CVD) method. Vapor-phase synthesis is probably the most extensively explored approach to the formation of 1D nanostructures such as whiskers, nanorods, and nanowires. However, unlike binary or ternary chalcogenides, the synthesis of quaternary CIGS nanostructures is challenging because of the difficulty in controlling the stoichiometry and phase structure. We introduced a method for synthesis of the single crystalline CIGS nanowires in the form of chalcopyrite using thermal-CVD without catalyst. It was confirmed that the CIGS nanowires are epitaxially grown on a sapphire substrate, having a length ranged from 3 to 100 micrometers and a diameter from 30 to 500 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.222.2-222.2
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• 2016

트랜지스터 응용 등에 관한 연구가 활발해 지면서 에너지 밴드갭이 0 eV에 가까운 그래핀 이외의 밴드 갭 조절이 가능한 MoS2 (molybdenum disulfide), BN (boron nitride), Bi2Te3 (bismuth telluride), WS2 (tungsten disulfide) 등과 같은 이차원 Transition Metal DiChalcogenides (TMDC) 물질이 반도체 물질로 각광받고 있다. 특히 MoS2의 경우 단결정 덩어리 상태에서는 약 1.3 eV의 밴드갭을 가지나 두께가 줄어들어 두 층일 경우에는 약 1.65 eV, 단일층이 되면 약 1.9 eV의 밴드갭을 가져 박막 층수에 따라 에너지 밴드갭 조절이 가능한 것으로 알려져있다. 하지만 두께 조절이 가능하면서 대면적, 고품질을 가지는 MoS2 박막 합성은 아직 제한적이라 할 수 있으며 새로운 방법 및 물질에 대한 연구가 지속적으로 이루어 지고 있다. 따라서 본 연구에서는 다양한 층수를 지니는 MoS2 합성을 위해 나노 두께의 MoS2 박막을 CF4 plasma 를 이용하여 layer etching 진행하고 CF4 plasma 100초 etching 진행한 2 layer 두께의 MoS2를 기준으로 H2S plasma를 이용하여 treatment 진행하였다. 물리적, 화학적 분석은 Raman spectroscopy, XPS(X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy) 등을 이용해 진행하였고 이를 통해 MoS2 layer 감소 및 damage recovery 등을 확인하였다.