• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.130-131
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• 2013

Nanostructured oxides are widely used in heterogeneous catalysis where their catalytic properties are closely associated with the size and morphology at nanometer level. The effect of particle size has been well decumented in the past two decades, but the shape of the nanoparticles has rarely been concerned. Here we illustrate that the redox and acidic-basic properties of oxides are largely dependent on their shapes by taking $Co_3O_4$, $Fe_2O_3$, $CeO_2$ and $La_2O_3$ nanorods as typical examples. The catalytic activities of these rod-shaped oxides are mainly governed by the nature of the exposed crystal planes. For instance, the predominant presence of {110} planes which are rich in active $Co^{3+}$ on $Co_3O_4$ nanorods led to a much higher activity for CO oxidation than the nanoparticles that mainly exposed the {111} planes. The simultaneous exposure of iron and oxygen ions on the surface of $Fe_2O_3$ nanorods have significantly enhanced the adsorption and activation of NO and thereby promoted the efficiency of DeNOx process. Moreover, the exposed surface planes of these rod-shaped oxides mediated the reaction performance of the integrated metal-oxide catalysts. Au/$CeO_2$ catalysts exhibited outstanding stability under water-gas shift conditions owing to the strong bonding of gold particle on the $CeO_2$ nanorods where the formed gold-ceria interface was resistant towards sintering. Cu nanoparticles dispersed on $La_2O_3$ nanorods efficiently catalyzed transfer dehydrogenation of primary aliphatic alcohols based on the uniue role of the exposed {110} planes on the support. Morphology control at nanometer level allows preferential exposure of the catalytically active sites, providing a new stragegy for the design of highly efficient nanostructured catalysts.

• Journal of Powder Materials
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• v.16 no.1
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• pp.9-15
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• 2009

Amorphization and crystallization behaviors of $Ti_{50}Cu_{50}Ni_{20}Al_{10}$ powders during high-energy ball milling and subsequent heat treatment were studied. Full amorphization obtained after milling for 30 h was confirmed by X-ray diffraction and transmission electron microscope. The morphology of powders prepared using different milling times was observed by field-emission scanning electron microscope. The powders developed a fine, layered, homogeneous structure with prolonged milling. The crystallization behavior showed that the glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 691,771 and 80 K, respectively. The isothermal transformation kinetics was analyzed by the John-Mehn-Avrami equation. The Avrami exponent was close to 2.5, which corresponds to the transformation process with a diffusion-controlled type at nearly constant nucleation rate. The activation energy of crystallization for the alloy in the isothermal annealing process calculated using an Arrhenius plot was 345 kJ/mol.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.11a
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• pp.903-906
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• 2008

To analyze the growth of SOB (Thiobacillus novellus) and biochemical corrosion of concrete, simulation test method and device were developed. And two types of simulation tests were conducted according to a transplant method and a concentration of H2SO4. As a result, the SOB growth in distinct manners and antibiosis of specimen were observed. In the case of the specimens indirectly transplanted with SOB through culture solution submersion at a hydrogen sulfide level of 120ppm, the rapid activation of SOB and the resulting sulfuric acid production were observed. However, SOB were shown to grow rapidly and then die out in a relative short period of time. Meanwhile, in the case of the specimens directly transplanted with SOB at a hydrogen sulfide level of 50ppm, the long-term growth of SOB was possible, but the production of sulfuric acid by SOB did not progress. In the case of the antibiotic metal-mixed specimens, SOB with destroyed cell membranes and internal organizations were observed.

• Carbon letters
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• v.12 no.4
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• pp.207-217
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• 2011

We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.11-18
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• 1996

The variation of electrical conductively and Seebeck coefficient of FeSi2 according to the density of the specimen has been observed over the temperature range 50 to $700^{\circ}C$. A conventional pressureless sintering method with various sintering time (0, 0.5, 1, 5h) at $1190^{\circ}C$ and/or various sintering temperatures(1160, 1175, 1190, $1200^{\circ}C$) for 2 h was carried out to prepare $FeSi_2$ specimens having various densities. The relationship between the electrical conductivity and Seebeck coefficient was investigated after two steps of annealing (at $865^{\circ}C$ and then $800^{\circ}C$ for total 160h) and thermoelectric measurement. The electrical conductivity for the specimens showed a typical tendency of semiconductor, the average activation energy of which in the intrinsic region (above $300^{\circ}C$) was observed approximately as 0.452 eV, and increased slightly with density. On the other hand, the specimen of the lower density showed the higher value of Seebeck coefficient in the intrinsic region. As the temperature fell into the non-degenerate region, the highly densified specimen which had relatively little residual metal phase showed the higher value of Seeback coefficient. The power factor of all specimens showed the optimum value at $200^{\circ}C$. However, the power factor of the specimen of the lower density increased again from $400^{\circ}C$ and that of the higher dense specimen increased from $500^{\circ}C$. The power factor was more affected by Seebeck coefficient than electrical conductivity over all temperature range.

• Journal of Hydrogen and New Energy
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• v.14 no.1
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• pp.17-23
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• 2003

$H_2$ permeation flux though a $100{\mu}m-thick$ Pd-Ru (6wt%) membrane was measured at various temperatures and pressures. The permeation flux followed the Sievert's law and thus the rate-limiting step of the hydrogen permeation was the bulk atomic diffusion step. The activation energy of the permeation flux was obtained at 17.9 kJ/mol and this value is consistent with those published previously. While no degradation of the permeation flux wasfound in the membrane exposed to the $O_2$ and $CO_2$ environments for 100 hours, the membrane exposed to $N_2$ environment for 100 hours showed the degradation in the $H_2$ permeation flux. The $H_2$ permeation was decreased as the exposure temperature to $N_2$, environment was increased. The $H_2$ permeation flux was fully recovered after the membrane was kept in the $H_2$ environment for certain time. The permeation flux degradation might be caused by the formation of metal nitride on the membrane surface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• Journal of Life Science
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• v.18 no.11
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• pp.1617-1624
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• 2008

Chitin and chitosan, which is deacetylated form of chitin, are one of the most abundant biomass on the earth. They showed various biological activities including antimicrobial activity, heavy metal chelating, immune system activation, and have very diverse applications in food, pharmaceutical, medicinal, and environmental industry. There have been reported many chitin/chitosan-hydrolyzing enzymes, their structures and genes from three domains, archaea, bacteria, and eukarya. Carbohydrate hydrolyzing enzymes are classified in CAZy (Carbohydrate Active Enzymes) database according to their amino acid sequence similarity. Interestingly, chitinases and chitosanases are classified in various glycosyl hydrolase(GH) families, GH2, GH5, GH7, GH8, GH18, GH19, GH20, GH46, GH48, GH73, GH75, GH80, GH84, and GH85. Here, we review characteristics and structures of chitin/chitosan hydrolyzing enzymes according to glycosyl hydrolase families in order to provide information about gene mining.

• Korean Journal of Food Science and Technology
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• v.28 no.4
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• pp.663-667
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• 1996

Acid phosphatase (EC 3.1.3.2) from Welsh onion was partially purified by Sephacryl S-200 gel filtration and CM-Sepharose CL-6B ion exchange chromatography. The optimum pH and temperature of acid phosphatase from green onion were pH 5.5 and $60^{\circ}C$, respectively. The enzyme was the most stable at pH 6.0 and unstable above pH 9.0. The activation energy of the enzyme was determined to be 4.86kcal/mole. The enzyme utilized p-nitrophenyl phosphate most as a best substrate among tested possible substrates, while 5'-GMP and 5'-IMP were poor substrates for the enzyme. $K_{m.app.}$ of the enzyme with p-nitrophenyl phosphate as a substrate was identified as 0.87mM. Among metal ions and inhibitors tested, $Cr^{+++},\;Zn^{++},\;Cu^{++}$, molybdate and metavanadate ions inhibited the enzyme reaction drastically.