• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.219-222
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• 2003

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecular and bio molecular. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance in selective etching of thin metal film of Self- Assembled Monolayers. In this report, we present the micromachining thin metal film by Mask-Less laser patterning of alknanethiolate Self-Assembled Monolayers.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.304-304
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• 2012

III-V 화합물 태양전지는 실리콘 등 다른 태양전지에 비해 1sun상 30% 이상의 고효율을 갖고 있고 direct bandgap과 높은 이동도 등의 물질특성과 3족과 5족의 비율 조절로 같은 결정구조에서 에너지 bandgap이 다른 물질들을 만들기에 용이하여 태양전지 스펙트럼의 넓은 영역을 흡수할 수 있는 장점이 있다. 그러나 셀 자체의 물질이 실리콘에 비하여 고가여서 고성능이 요구되는 우주 인공위성 등에 적용이 되었지만, 2000년대 이후로 집광에 적용 가능한 태양전지의 연구를 거듭하여 2005년부터는 값싼 프레넬 렌즈를 이용하여 1 sun에 비해 500배 해당하는 빛을 셀에 집광하여 보다 효율을 증가시킴으로써 지상발전용에도 적용 가능한 셀을 형성하게 되었다. 더불어 태양전지의 효율을 증가시키기 위한 다양한 구조적 변화의 시도도 많이 이루어지고 있다. 최근 실리콘 태양전지의 표면에 texture 구조를 주어 높은 흡수율과 낮은 반사율을 갖게 함으로써 효율을 증가시키는 사례가 많아지고, III-V 화합물 태양전지도 texturing에 의해 증가된 효율을 발표한바 있다. 본 연구에서는 III-V 화합물 InGaP 태양전지의 window층으로 사용되는 InAlP 층에 Metal-assisted chemical etching (mac etching) 방법으로 texture 구조를 형성하여 etching 시간에 따른 InAlP층의 표면 변화와 반사율의 변화를 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• Journal of Sensor Science and Technology
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• v.17 no.2
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• pp.95-99
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• 2008

Various etching methods of optical fiber and formation of metal nano particles on the optical fiber have been proposed for fabrication of fiber optic localized surface plasmon resonance (FO LSPR) biosensors. Different types of etched optical fiber are possible by removing the cladding of optical fiber using HF (hydrofluoric acid) solution and BHF (buffered hydrofluoric acid) solution, which results in improved surface roughness when BHF solution is used. Localized surface plasmon can be formed and measured by formation of silver and gold nano particles on the etched optical fiber. The characteristics of the etched optical fiber and metal nano particles on the etched surface of the optical fiber play a key role in dictating the sensitivity of the LSPR sensors, so that the proposed results can be expected to be applied for related research on fiber optic based biosensors.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.478-481
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• 1996

Disproportionation reaction is very important and interesting reaction to be applied to such surface treatment as metal, alloy, compound coating, a surface etching and so on. In gaseous system, the reaction of Al chloride is applied to Al and Al alloy coating, and the similar reaction of Ti chloride is also used for Ti, Ti alloy and Ti compound coating. As for aqueous system, this reaction is utilized to such metal coat as Sn etc. and metal etching such as Cu, Fe and so on. Also in molten salts system, this reaction has many application for surface treatment like metal, alloy and compound coatings for corrosion, wear, heat resistance and so forth. For instance, carbide film, nitride film, boride film, alloy film, quite new different film from the components of substrate material are coated in single and multiple component film system by the disproportionation reaction.

• Transactions of Materials Processing
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• v.5 no.2
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• pp.97-104
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• 1996

It is very important to obtain the knowledge of loads and flow patterns in most processes because these information are the fundamental data of die design and process design. The objective of present study is to investigate loads and metal flow patterns for various process conditions in flat die extrusion of square-bars from circular billets. For analyzing the metal flow patterns of the billets photo etching is used on sections of split specimen. From this method metal flow patterns are analyzed for various area reductions friction factors and punch stroke through the process from initial-stage to final-stage. Experiments are carried out with hard solder billets at room temperature.

• Resources Recycling
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• v.14 no.3
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• pp.48-54
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• 2005

Solvent extraction and chemical reduction experiments have been performed to separate iron and nickel from a spent FeCl$_3$ etching solution and to recover nickel metal. It was possible to separate iron and nickel by extracting the spent solution with Alamine336. At the O/A ratio of 7:1, iron extraction percentage of 99% was obtained. In the stripping of the loaded organic with 0.01 M HCl solution, iron stripping percentage of 99% was obtained when the A/O ratio was 7:1. When the pH of the raffinate was controlled to be 10.5, nickel metal powder with 99% purity was obtained by using hydrazine as a reducing agent at 100$^{\circ}C$. A process was suggested to recover nickel metal from the spent FeCl$_3$ solution and to regenerate etching solution.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.855-859
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• 2012

Silicon nanowires (SiNWs) were fabricated by a metal-assisted chemical etching of Si and the porous structure on their surfaces was controlled by changing the volume ratio of the etching solution composed of hydrofluoric acid, hydrogen peroxide, and deionized water. The concentration of hydrogen peroxide as the oxidant was varied for controlling the porosity of SiNWs. The optical properties of porous SiNWs were unique and very different from those of single-crystalline Si, as characterized by measuring their photoluminescence and Raman spectra for different porosities.