• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Journal of the Korean institute of surface engineering
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• v.56 no.1
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• pp.77-83
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• 2023

The reliability of leadframe-based semiconductor package depends on the adhesion between metal and epoxy molding compound (EMC). In this study, the Ag surface was electrochemically treated in a solution containing silanes in order to improve the adhesion between Ag and epoxy substrate. After electrochemical treatment, the thin silane layer was deposited on the Ag surface, whereby the peel strength between Ag and epoxy substrate was clearly improved. The improvement of peel strength depended on the functional group of silane, implying the chemical linkage between Ag and epoxy.

• Journal of the Korean institute of surface engineering
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• v.39 no.2
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• pp.57-63
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• 2006

In this study, In-base solder was applied to the interface between $Bi_2Sr_2Ca_1Cu_2O_x(Bi_{2212})$ superconductor and Cu-Ni shunt metal at the temperature lower than $150^{\circ}C$. Most of the cases, $Bi_{2212}$ superconductor was precoated with Ag by electroplating in order to improve the contact properties of the solder layer. When the superconductor was directly soldered on to the superconductor, the solder was easily separated without external force. The shear strength of the contact between superconductor and shunt metal increased from 69.2 kgf to 74.4 kgf and 80.1 kgf, as the current density of the Ag electroplating was changed from 63 mA to 96 mA and 126 mA, respectively. The contact strength also increased to 49.9 kgf and 69.2 kgf when thickness of the electroplated Ag layer increased to $5{\mu}m$ and $10{\mu}m$, reapectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.500-506
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• 2024

The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

• Korean Journal of Heritage: History & Science
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• v.54 no.1
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• pp.4-17
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• 2021

This study analyzed 19 samples of harness fittings and pendants, which were excavated in Tomb No. 15 in Songhyeon-dong, Changnyeong. Harness fittings and pendants are used for ostentation, rather than practicality, and were excavated from ancient tombs in Gaya culture. So, they are considered artifacts that compare the production techniques and raw materials. This study aimed to examine the production techniques and provenience studies of Bihwa Gaya, which is estimated to be from the 5th to 6th centuries. According to the research, harness fittings were made of pure copper and were gilded with Au·Ag alloys on their surfaces. Hg was detected together and plated with a mercury amalgam method. As a result of the pendant (fish scales-pattern, oval and fish-tail shape), analysis showed that Fe in the background metal, Cu in the middle layer, and Au and Ag on the surface were the main components. The method of adhesion between Cu and Au·Ag gilded layers are plated by a mercury amalgamation method. So, it was identified by the gilt-iron·gold·bronze technique. Since the pendant (heart shaped) is found to be the main component of Fe in the background metal and Ag in the surface layer, the metal was made gilt-iron·silver technique. The background metal and gilding were additionally fixed using a rivet. The raw materials of 3 harnesses excavated from Changnyeong are plotted in zone 2 in the southern Korean Peninsula. And 16 harnesses were plotted in Chinese copper ore by Mabuchi Hishao in the Chinese Peninsula.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.299-304
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• 2012

A high angular tolerance spectral filter was realized incorporating an etalon, which consists of a $TiO_2$ cavity sandwiched between a pair of Ag/Ge mirrors. The effective angle was substantially extended thanks to the cavity's high refractive index. The device was created by embedding a 313-nm thick $TiO_2$ film in 16-nm thick Ag/Ge films through sputtering, with the Ge layer alleviating the roughness and adhesion of the Ag layer. For normal incidence, the observed center wavelength and transmission were ~900 nm and ~60%, respectively; throughout the range of $50^{\circ}$, the relative wavelength shift and transmission variation amounted to only ~0.06 and ~4%, respectively.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.9-11
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• 2013

The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.

• Journal of Welding and Joining
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• v.20 no.1
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• pp.91-96
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• 2002

Three different kinds of substrate used in this study : bare Cu, electroless Ni/Cu substrate with a Nilayer thickness of $5\mu\textrm{m}$, immersion Au/electroless Ni/Cu substrate with the Au and Ni layer of $0.15\mu\textrm{m}$ and $5\mu\textrm{m}$ thickness, respectively. The wettability and interfacial tension between various substrate and Sn-3.5Ag solder were examined as a function of soldering temperature, types of flux. The wettability of Sn-3.5Ag solder increased with soldering temperature and solid content of flux. The wettability of Sn-3.5Ag solder was affected by the substrate metal finish used, i.e., nickel, gold and copper. Intermetallic compound formation between liquid solder and substrate reduced the interfacial energy and decreased wettability.

• Journal of Powder Materials
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• v.24 no.6
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• pp.464-471
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• 2017

A metal mesh TCE film is fabricated using a series of processes such as UV imprinting of a transparent trench pattern (with a width of $2-5{\mu}m$) onto a PET film, filling it with silver paste, wiping of the surface, and heat-curing the silver paste. In this work nanosized (40-50 nm) silver particles are synthesized and mixed with submicron (250-300 nm)-sized silver particles to prepare silver paste for the fabrication of metal mesh-type TCE films. The filling of these silver pastes into the patterned trench layer is examined using a specially designed filling machine and the rheological testing of the silver pastes. The wiping of the trench layer surface to remove any residual silver paste or particles is tested with various mixture solvents, and ethyl cellosolve acetate (ECA):DI water = 90:10 wt% is found to give the best result. The silver paste with 40-50 nm Ag:250-300 nm Ag in a 10:90 wt% mixture gives the highest electrical conductance. The metal mesh TCE film obtained with this silver paste in an optimized process exhibits a light transmittance of 90.4% and haze at 1.2%, which is suitable for TSP application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.25-30
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• 2020

Oxide (SiO₂)/Metal(Ag)/Oxide(SiO₂, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO₂ (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10^-3 Ω^-1.