• Title/Summary/Keyword: Memory equation

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ON UNIFORM DECAY OF WAVE EQUATION OF CARRIER MODEL SUBJECT TO MEMORY CONDITION AT THE BOUNDARY

  • Bae, Jeong-Ja;Yoon, Suk-Bong
    • Journal of the Korean Mathematical Society
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    • v.44 no.4
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    • pp.1013-1024
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    • 2007
  • In this paper we consider the uniform decay for the wave equation of Carrier model subject to memory condition at the boundary. We prove that if the kernel of the memory decays exponentially or polynomially, then the solutions for the problems have same decay rates.

Implementation and Experiments of Sparse Matrix Data Structure for Heat Conduction Equations

  • Kim, Jae-Gu;Lee, Ju-Hee;Park, Geun-Duk
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.12
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    • pp.67-74
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    • 2015
  • The heat conduction equation, a type of a Poisson equation which can be applied in various areas of engineering is calculating its value with the iteration method in general. The equation which had difference discretization of the heat conduction equation is the simultaneous equation, and each line has the characteristic of expressing in sparse matrix of the equivalent number of none-zero elements with neighboring grids. In this paper, we propose a data structure for sparse matrix that can calculate the value faster with less memory use calculate the heat conduction equation. To verify whether the proposed data structure efficiently calculates the value compared to the other sparse matrix representations, we apply the representative iteration method, CG (Conjugate Gradient), and presents experiment results of time consumed to get values, calculation time of each step and relevant time consumption ratio, and memory usage amount. The results of this experiment could be used to estimate main elements of calculating the value of the general heat conduction equation, such as time consumed, the memory usage amount.

GLOBAL EXISTENCE AND STABILITY FOR EULER-BERNOULLI BEAM EQUATION WITH MEMORY CONDITION AT THE BOUNDARY

  • Park, Jong-Yeoul;Kim, Joung-Ae
    • Journal of the Korean Mathematical Society
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    • v.42 no.6
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    • pp.1137-1152
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    • 2005
  • In this article we prove the existence of the solution to the mixed problem for Euler-Bernoulli beam equation with memory condition at the boundary and we study the asymptotic behavior of the corresponding solutions. We proved that the energy decay with the same rate of decay of the relaxation function, that is, the energy decays exponentially when the relaxation function decay exponentially and polynomially when the relaxation function decay polynomially.

Memory Equations for Kinetics of Diffusion-Influenced Reactions

  • Yang, Mino
    • Bulletin of the Korean Chemical Society
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    • v.27 no.10
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    • pp.1659-1663
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    • 2006
  • A many-body master equation is constructed by incorporating stochastic terms responsible for chemical reactions into the many-body Smoluchowski equation. Two forms of Langevin-type of memory equations describing the time evolution of dynamical variables under the influence of time-independent perturbation with an arbitrary intensity are derived. One form is convenient in obtaining the dynamics approaching the steady-state attained by the perturbation and the other in describing the fluctuation dynamics at the steady-state and consequently in obtaining the linear response of the system at the steady-state to time-dependent perturbation. In both cases, the kinetics of statistical averages of variables is found to be obtained by analyzing the dynamics of time-correlation functions of the variables.

An Equalizing Algorithm for Cell-to-Cell Interference Reduction in MLC NAND Flash Memory (MLC NAND 플래시 메모리의 셀 간 간섭현상 감소를 위한 등화기 알고리즘)

  • Kim, Doo-Hwan;Lee, Sang-Jin;Nam, Ki-Hun;Kim, Shi-Ho;Cho, Kyoung-Rok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.6
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    • pp.1095-1102
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    • 2010
  • This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. High growth of the flash memory market has been driven by two combined technological efforts that are an aggressive scaling technique which doubles the memory density every year and the introduction of MLC(multi level cell) technology. Therefore, the CCI is a critical factor which affects occurring data errors in cells. We introduced an equation of CCI model and designed an equalizer reducing CCI based on the proposed equation. In the model, we have been considered the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. Also we design and verify the proposed equalizer using Matlab. As the simulation result, the error correction ratio of the equalizer shows about 20% under 20nm NAND process where the memory channel model has serious CCI.

Numerical Simulation of Double SMA wire Actuator Using Two-Way Shape Memory Effect of SMA (형상기억합금의 양방향효과를 이용한 두개의 형상기억합금선이 부착된 작동기의 수치해석)

  • Kim, Sang-Haun;Cho, Maeng-Hyo
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.11a
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    • pp.287-290
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    • 2004
  • A structure using the two-way shape memory effect (TWSME) returns to its initial shape by increasing or decreasing temperature under initial residual stress. Through the thermo-mechanical constitutive equation of shape memory alloy(SMA) proposed by Lagoudas et al., we simulate the behavior of a double actuator in which two SMA wires are attached to the tip of panel under the initially given residual stress. Through the numerical results conducted in the present study, the proposed actuator device is suitable for repeated actuation. The simulation algorithm proposed in the present study can be applied extensively to the analysis of the assembled .system of SMA-actuator and host structure in the practical applications.

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Behavioral Current-Voltage Model with Intermediate States for Unipolar Resistive Memories

  • Kim, Young Su;Min, Kyeong-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.539-545
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    • 2013
  • In this paper, a behavioral current-voltage model with intermediate states is proposed for analog applications of unipolar resistive memories, where intermediate resistance values between SET and RESET state are used to store analog data. In this model, SET and RESET behaviors are unified into one equation by the blending function and the percentage volume fraction of each region is modeled by the Johnson-Mehl-Avrami (JMA) equation that can describe the time-dependent phase transformation of unipolar memory. The proposed model is verified by the measured results of $TiO_2$ unipolar memory and tested by the SPECTRE circuit simulation with CMOS read and write circuits for unipolar resistive memories. With the proposed model, we also show that the behavioral model that combines the blending equation and JMA kinetics can universally describe not only unipolar memories but also bipolar ones. This universal behavioral model can be useful in practical applications, where various kinds of both unipolar and bipolar memories are being intensively studied, regardless of polarity of resistive memories.

Morphing of Composite Plate Using SMA Actuator (형상기억합금 작동기를 이용한 복합재 평판의 형상변형)

  • 김상헌;조맹효
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2003.10a
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    • pp.146-149
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    • 2003
  • Two-way shape memory effect(TWSME) under residual stresses are considered in the present study. The structure using two-way shape memory alloy(SMA) concept returns to its initial shape by increasing or decreasing temperature under the initially given residual stress. In the present study, we use a thermo-mechanical constitutive equation of SMA and laminated composite plates are considered as simple morphing structural components which are based on first order shear deformable laminated composite plate with large deflection. Numerical results of fully coupled SMA-composite structures are presented

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Analysis of 3-D non-linear truss smart actuator using SMA (형상기억합금을 이용한 3 차원 비선형 트러스 지능작동기 해석)

  • Yang, Seong-Pil;Kim, Sang-Haun;Li, Ningxue;Ryu, Jung-Hyun;Cho, Maeng-Hyo
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2008.04a
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    • pp.557-561
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    • 2008
  • Shape memory alloys (SMA) have interesting features which are the superelastic effect (SE), shape memory effect (SME), two-way SME (TWSME), and so on. These are utilized in actuation factor. The thermo-mechanical constitutive equations of SMA proposed by Lagoudas et al. were employed in the present study for simulating SMA truss structures. The constitutive equation includes the necessary internal variables to account for the material transformations and is utilized in the non-linear finite element procedure of three dimensional truss structures that composed SMA bar (wholly or partially). In this study, we observed which element should be actuated to get a desired shape (actuation shape) from computational analysis. To reach this goal, we apply SMA constitutive equation to non-linear finite element formulation. And then, we simulate two-way shape memory effect as well as superelastic effect of various three dimensional truss using SMA.

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