• 전자공학회논문지
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• 제51권8호
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• pp.172-177
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• 2014

두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

• 전자공학회논문지D
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• 제34D권8호
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• pp.52-61
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• 1997

In this paper it is proposed a new architecture for N*N optical packet switching system. It consists of active-splitter type pf packet router, travelling type of optical buffer memory for packet contention resoltuion and an electronic controller. the BER performance of the proposed switching system is analyzed with respect to channel crosstalks and amplified spontaneous emissio noise form switching elements and optical amplifiers respectively. Operational validity of the proposed switching system is also experimentally proved by realizing 2*2 optical packet switching system.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.78-79
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• 2015

We investigate the switching current for various cell diameters and DM interaction. We find that the current density for switching can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover the switching current density is also strongly influenced by DM interaction. In the presentation, we will discuss the effect of domain wall formation and more various DMI constant on the switching current desity in detail.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.73-78
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• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.

• 한국통신학회논문지
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• 제29권4B호
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• pp.397-402
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• 2004

본 논문에서는 파일 전송 시 발생하는 메모리 복사(memo교 copy)와 문맥 교환(context switch)을 최소화하여 시스템의 성능(performance)을 향상시킬 수 있는 네트워크 시스템 호출에 관한 연구를 수행하였다. 기존 파일 전송 기법에서 사용자가 하나의 패킷을 전송할 때, 사용자와 커널(Kernel) 공간 사이에서의 메모리 복사가 2회에 걸쳐 수행된다. 이러한 사용자와 커널 공간 사이에서 이루어지는 메모리 복사는 데이터 전송에 소요되는 시간을 증가시키고, 시스템의 성능에 좋지 않은 영향을 준다. 본 논문은 이러한 문제점들을 해결하기 위하여 필요한 경우 사용자와 커널 사이에서의 메모리 복사를 수행하지 않고, 데이터가 커널 공간 내에서 송수신될 수 있는 새로운 알고리즘을 제시하였다. 또한 실제의 시스템에서 제안된 알고리즘의 성능을 분석하기 위하여 리눅스 커널 버전 2.6.0의 소스 코드를 수정하였고, 새로운 네트워크 시스템 호출을 구현하였다. 성능 측정 결과, 본 연구에서 제안한 파일 전송 방식이 기존의 파일 전승 방식에 비하여 짧은 파일 전송 시간을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.384-384
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• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• Transactions on Electrical and Electronic Materials
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• 제16권5호
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.710-712
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• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• Applied Microscopy
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• 제51권
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• pp.7.1-7.9
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• 2021

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.245-248
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• 1998

Until now, to solve the problem, the lack of memory at TDX-10A ESS (Electronic Switching System), we have extended only main memory of the systems. However, this method is useful for only Transitcall Processing Subsystems and, it is not an effective way that is able to apply to all Subsystems of ESS because of the financial aspect. In this paper, we will introduce a new method which uses Non-Resident Program. This method utilizes main memory more effectively. We will also analyze the effectiveness resulting from test of new method applied to TDX-10A ESS.