• Title/Summary/Keyword: Memory Improvement

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Memory-improving effect of formulation-MSS by activation of hippocampal MAPK/ERK signaling pathway in rats

  • Kim, Sang-Won;Ha, Na-Young;Kim, Kyung-In;Park, Jin-Kyu;Lee, Yong-Heun
    • BMB Reports
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    • v.41 no.3
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    • pp.242-247
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    • 2008
  • MSS, a comprising mixture of maesil (Prunus mume Sieb. et Zucc) concentrate, disodium succinate and Span80 (3.6 : 4.6 : 1 ratio) showed a significant improvement of memory when daily administered (460 mg/kg day, p.o.) into the normal rats for 3 weeks. During the spatial learning of 4 days in Morris water maze test, both working memory and short-term working memory index were significantly increased when compared to untreated controls. We investigated a molecular signal transduction mechanism of MSS on the behaviors of spatial learning and memory. MSS treatment increased hippocampal mRNA levels of NR2B and TrkB without changes of NR1, NR2A, ERK1, ERK2 and CREB. However, the protein levels of pERK/ERK and pCREB/CREB were all significantly increased to $1.5{\pm}0.17$ times. These results suggest that the improving effect of spatial memory for MSS is linked to MAPK/ERK signaling pathway that ends up in the phosphorylation of CREB through TrkB and/or NR2B of NMDA receptor.

Design and Performance Analysis of Pre-Distorter Including HPA Memory Effect

  • An, Dong-Geon;Lee, Il-Jin;Ryu, Heung-Gyoon
    • Journal of electromagnetic engineering and science
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    • v.9 no.2
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    • pp.71-77
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    • 2009
  • OFDM(Orthogonal Frequency Division Multiplexing) signals sutler serious nonlinear distortion in the nonlinear HPA(High Power Amplifier) because of high PAPR(Peak Average Power Ratio). Nonlinear distortion can be improved by a pre-distorter, but this pre-distorter is insufficient when the PAPR is very high in an OPFDM system. In this paper, a DFT(Discrete Fourier Transform) transform technique is introduced for PAPR reduction. It is especially important to consider the memory effect of HPA for more precise predistortion. Therefore, in this paper, we consider two models, the TWTA(Traveling-Wave Tube Amplifier) model of Saleh without a memory effect and the HPA memory polynomial model that has a memory effect. We design a pre-distorter and an adaptive pre-distorter that uses the NLMS(Normalized Least Mean Square) algorithm for the compensation of this nonlinear distortion. Without the consideration of a memory effect, the system performance would be degraded, even if the pre-distorter is used for the compensation of the nonlinear distortion. From the simulation results, we can confirm that the proposed system shows an improvement in performance.

Effect of Cold Rolling on Fatigue Crack Propagation of TiNi/A16061 Shape Memory Composite (TiNi/A16061 형상기억복합재료의 피로균열진전에 대한 냉간압연효과)

  • Lee Jin-Kyung;Park Young-Chul;Lee Kyu-Chang;Lee Sang-Pill;Cho Youn-Ho;Lee Joon-Hyun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.29 no.10 s.241
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    • pp.1315-1320
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    • 2005
  • TiNi alloy fiber was used to recover the original shape of materials using its shape memory effect. The shape memory alloy plays an important role within the metal matrix composite. The shape memory alloy can control the crack propagation in metal matrix composite, and improve the tensile strength of the composite. In this study, TiNi/A16061 shape memory alloy(SMA) composite was fabricated by hot press method, and pressed by a roller for its strength improvement. The four kinds of specimens were fabricated with $0\%,\;3.2\%,\;5.2\%\;and\;7\%$ and volume fraction of TiNi alloy fiber, respectively. A fatigue test has performed to evaluate the crack initiation and propagation for the TiNi/A16061 SMA composite fabricated by かis method. In order to study the shape memory effect of the TiNi alloy fiber, the test has also done under both conditions of the room temperature and high temperature. The relationship between the crack growth rate and the stress intensity factor was clarified for the composite, and the cold rolling effect was also studied.

Analysis of Driving Characteristics and Memory Effect by Occupation Area Evaluation Method of Charged Particle Type Display Device (대전입자형 디스플레이 소자의 점유면적 평가방법에 의한 구동특성 및 메모리 효과 분석)

  • Kim, Jin-Sun;Kim, Young-Cho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.8
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    • pp.669-673
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    • 2011
  • The charged particle type display is a kind of the reflectivity type display and shows an image by absorption and reflection of external light source, which has keep an image without additional electric power because of bistability. In this paper, we made a device whose cell gap is $56\;{\mu}m$ and also analyzed driving and memory characteristics by applied driving voltages. As a result, we found that the driving voltage and memory effect depend on q/m(charge to mass ratio) of charged particle. In this case of breakdown voltage, the devices showed degradation of reflectivity and memory effect due to irregular movement of overcharged particles. In addition, contrast ratio of the device varies with memory effect. Thus, we consider that device needs uniform q/m for improvement of electric and optical properties and memory effect.

Application-Adaptive Performance Improvement in Mobile Systems by Using Persistent Memory

  • Bahn, Hyokyung
    • International journal of advanced smart convergence
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    • v.8 no.1
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    • pp.9-17
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    • 2019
  • In this article, we present a performance enhancement scheme for mobile applications by adopting persistent memory. The proposed scheme supports the deadline guarantee of real-time applications like a video player, and also provides reasonable performances for non-real-time applications. To do so, we analyze the program execution path of mobile software platforms and find two sources of unpredictable time delays that make the deadline-guarantee of real-time applications difficult. The first is the irregular activation of garbage collection in flash storage and the second is the blocking and time-slice based scheduling used in mobile platforms. We resolve these two issues by adopting high performance persistent memory as the storage of real-time applications. By maintaining real-time applications and their data in persistent memory, I/O latency can become predictable because persistent memory does not need garbage collection. Also, we present a new scheduler that exclusively allocates a processor core to a real-time application. Although processor cycles can be wasted while a real-time application performs I/O, we depict that the processor utilization is not degraded significantly due to the acceleration of I/O by adopting persistent memory. Simulation experiments show that the proposed scheme improves the deadline misses of real-time applications by 90% in comparison with the legacy I/O scheme used in mobile systems.

Performance of the Finite Difference Method Using Cache and Shared Memory for Massively Parallel Systems (대규모 병렬 시스템에서 캐시와 공유메모리를 이용한 유한 차분법 성능)

  • Kim, Hyun Kyu;Lee, Hyo Jong
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.4
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    • pp.108-116
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    • 2013
  • Many algorithms have been introduced to improve performance by using massively parallel systems, which consist of several hundreds of processors. A typical example is a GPU system of many processors which uses shared memory. In the case of image filtering algorithms, which make references to neighboring points, the shared memory helps improve performance by frequently accessing adjacent pixels. However, using shared memory requires rewriting the existing codes and consequently results in complexity of the codes. Recent GPU systems support both L1 and L2 cache along with shared memory. Since the L1 cache memory is located in the same area as the shared memory, the improvement of performance is predictable by using the cache memory. In this paper, the performance of cache and shared memory were compared. In conclusion, the performance of cache-based algorithm is very similar to the one of shared memory. The complexity of the code appearing in a shared memory system, however, is resolved with the cache-based algorithm.

The Intervention Effect of Cognitive Improvement Program for Elderly with Mild Cognitive Impairment (경도인지장애 노인의 인지향상 프로그램 중재효과)

  • Song, Myeong Kyeong;Kim, Soon Ock;Kim, Chun Suk
    • Journal of Korean Public Health Nursing
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    • v.32 no.1
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    • pp.81-95
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    • 2018
  • Purpose: This study was conducted to identify the effects of a group cognitive improvement program on cognitive function, depression and self-esteem in elderly individuals with mild cognitive impairment. Methods: This was an experimental study that employed a pre-post design of a non-equivalence control group. The subjects were 52 elderly people with mild cognitive impairment, 25 of whom were assigned to the experimental group and 27 to the control group. The program was conducted for a total of 12 sessions for 60 minutes each. Data were analyzed using the ${\chi}2-test$, Fisher's exact test, and Independent t-test with the SPSS 20.0 program. Results: After the intervention, the group who participated showed improvement in all areas of cognitive function based on MMSE-KC (F=26.37, p.<0.001), the Rey Complex Figure Test: copy (F=20.66, p.<0.001), Immediate memory of Seoul Verbal Learning Test-Elderly's version (F=29.68, p.<0.001), delayed memory (F=45.79 p.<0.001), memory recall (F=28.97, p.<0.001), Forward of Digit Span Test (F=9.25, p=.004), backward (F=8.33, p.=0.006), language comprehension (F=13.42, p.<0.001), and digit symbol coding (F=17.74, p.<0.001) relative to the control group. Moreover depression (F=24.09, p.<0.001) was decreased in program participants, whereas self-esteem (F=40.24, p.<0.001) was increased. Conclusion: The program could be a useful intervention because the results show that the group cognitive improvement program has a significant effect on cognitive function, depression and self-esteem in elderly with mild cognitive impairment.

Correlation between Cognitive Functions and Psychotic Symptoms in Schizophrenic Patients (정신분열병 환자에서 인지기능 및 정신병적 증상의 상관관계)

  • Kim, Yong-Ku;Lee, Jung-Ae;Lee, So-Youn;Lee, Bun-Hee;Han, Chang-Su
    • Korean Journal of Biological Psychiatry
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    • v.13 no.3
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    • pp.191-201
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    • 2006
  • Objectives : The purpose of this study was to investigate whether the cognitive functions would be correlated with psychotic symptoms and whether antipsychotic treatments would affect the cognitive functions after 8 weeks. Methods : The thirty-five schizophrenic patients were conducted in this study. The psychopathology was measured using PANSS. The memory function, executive function, and sustained attention were measured using Memory Assessment Scale(MAS), Wisconsin Card Sorting Test(WCST), and Vigilance(VIG) and Cognitrone(COG) in Vienna Test System. After 8 weeks of antipsychotic treatment, we retested the cognitive tests. Results : 1) The cognitive tests after the 8 week's treatment showed significant improvements in memory and executive function in the schizophrenic patients. On the other side, sustained attention did not show improvement. 2) The change of PANSS were correlated with perseverative response, perseverative error and total correct in WCST at baseline. WCST scores at baseline were correlated with negative symptoms, but not positive ones. Conclusion : These study suggests that 1) the impaired sustained attention could be a vulnerability marker in schizophrenia, 2) memory & executive function deficit could be reversible after treatment, and 3) medication might have a benefit in improving the cognitive functions in schizophrenia. Furthermore, the data supports that the better premorbid executive function was, the more favorable was the treatment response in schizophrenic patients. Finally, this study indicates that executive function might be an index of treatment improvement.

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The Effect of Snoezelen and Computerized Cognitive Rehabilitation(Rehacom) on Improvement of Cognitive Function (스노젤렌과 전산화 인지재활 프로그램(Rehacom)이 인지기능 향상에 미치는 영향)

  • Song, Minok;Kim, Moungjin;You, Youngmin;Lee, Hyangjin;Yang, Giung
    • Journal of The Korean Society of Integrative Medicine
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    • v.1 no.3
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    • pp.79-95
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    • 2013
  • Purpose : This study aims to investigate the effect of the Snoezelen and Rehacom programs on improvement of attention and memory, and the effect of the Snoezelen program on stress reduction. Method : This study was targeted at 11 subjects in the Snoezelen experimental group, 11 subjects in the Rehacom group and 11 subjects in the non-experimental group. As the initial evaluation, all the subjects took electroencephalography. Then, the Snoezelen group and Rehacom group did Snoezelen training and Rehacom training, respectively total 12 times(for 20 minutes twice per week for six weeks), but no training was applied to the control group. Three weeks after the training, the interim was carried out, and four weeks after the training, the final evaluation was carried out. Results : Subjects' attention increased to $58.15{\pm}4.96$ from $43.75{\pm}4.69$ during the Snoezelen training, and increased to $49.85{\pm}1.91$ from $43.28{\pm}2.71$ during the Rehacom training, which means the Snoezelen training was more effective in improving attention(P<0.05). Subjects' memory increased to $56.14{\pm}1.26$ from $43.19{\pm}3.46$ during the Snoezelen training, and increased to $50.94{\pm}4.0$ from $43.07{\pm}2.58$ during the Rehacom training. This also implies that the Snoezelen training was more effective in improving memory(P<0.05). Conclusion : Though both of the Snoezelen training and Rehacom training improved attention and memory, the Snoezelen program was more effective, and it also influenced stress resistance and physical arousal.

Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.77-77
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    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

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