• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.3
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• pp.331-340
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• 2012

In the deep sub-micron ICs, growing amounts of on-die memory and scaling effects make embedded memories increasingly vulnerable to reliability and yield problems. Spare columns are often included in memories to repair defective cells or bit lines during production test. In many cases, the repair process will not use all spare columns. Schemes have been proposed to exploit these unused spare columns to store additional check bits which can be used to reduce the miscorrection probability for triple errors in single error correction-double error detection (SEC-DED). These additional check bits increase the dimensions of the parity check matrix (H-matrix) requiring extra area overhead. A method is proposed in this paper to efficiently fill the extra rows of the H-matrix on the basis of similarity of logic between the other rows. Optimization of the whole H-matrix is accomplished through logic sharing within a feasible operating time resulting in reduced area overhead. A detailed implementation using fuse technology is also proposed in this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.24.2-24.2
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• 2011

Ru is used as a bottom electrode capacitor in dynamic random access memories (DRAMs) and ferroelectric random access memories (FRAMs). The surface of the Ru needs to be planarized which is usually done by chemical mechanical polishing (CMP). Ru CMP process requires chemical slurry consisting of abrasive particles and oxidizer. A slurry containing NaIO4 and alumina particles is already proposed for Ru CMP process. However, the stability of the slurry is critical in the CMP process since if the particles in the slurry get agglomerated it would leave scratches on the surface being planarized. Thus, in the present work, the stability behavior of the slurry using a suitable anionic polyelectrolyte is investigated. The parameters such as slurry pH, polyelectrolyte concentration, adsorption time and the sequence of addition of chemicals are optimized. The results show that the slurry is stable for longer time at an optimized condition. The polishing behavior of the Ru using the optimized slurry is also investigated.

• Korean Institute of Interior Design Journal
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• v.21 no.2
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• pp.207-214
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• 2012

Today, museum exhibition can be divided into two sub-categories: a. informative exhibition with various useful auxiliary media to convey knowledge and b. appreciative exhibition considering aesthetic conveyance and visual/perceptual environment. In addition to this, the concept of memorial exhibition as a field that tangible and intangible memories are transmitted and reproduced is creating another genre of exhibition. As an example of such a memorial exhibition above, the work of de-constructive architect Daniel Libeskind was selected. Jewish Museum and Imperial War Museum North both of which maximized the exhibition space by grafting architectural language to exhibition narrative were analyzed and compared to see if the same architectural language can be displayed differently in another form of exhibition after being drawn into the exhibition space depending on the changes in time and perspective. Therefore, in the narrative display combining the selection of exhibition contents and storytelling, the formative language of space can confirm that exhibition narrative as an ending structure changed into a retelling story with more extended meanings through interactive factors. Eventually, in this formative narrative, when the display of historical facts and exhibition themes is combined with the architectural language in an exhibition hall according to the approach direction, the memorial exhibition can create a formative language stimulating sensibility in the memories of space and a differentiated formative exhibition space where one is truly moved by oneness of contents.

• Journal of the Korean Operations Research and Management Science Society
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• v.22 no.3
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• pp.37-58
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• 1997

An AI approach with tabu search is designed to solve multi-level knapsack problems. The approach performs intelligent actions with memories of historic data and learning effect. These action are developed ont only by observing the attributes of the optimal solution, the solution space, and its corresponding path to the optimal, but also by applying human intelligence, experience, and intuition with respect to the search strategies. The approach intensifies, or diversifies the search process appropriately in time and space. In order to create a good neighborhood structure, this approach uses two powerful choice rules that emphasize the impact of candidate variables on the current solution with respect to their profit contribution. "Pseudo moves", similar to "aspirations", support these choice rules during the evaluation process. For the purpose of visiting as many relevant points as possible, strategic oscillation between feasible and infeasible solutions around the boundary is applied. To avoid redundant moves, short-term (tabu-lists), intemediate-term (cycle-detection), and long-term (recording frequency and significant solutions for diversfication) memories are used. Test results show that among the 45 generated problems (these problems pose significant or insurmountable challenges to exact methods) the approach produces the optimal solutions in 39 cases.lutions in 39 cases.

• Transactions on Control, Automation and Systems Engineering
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• v.3 no.2
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• pp.133-138
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• 2001

This paper describes a system that can used to recognize an unknown material regardless of the change of ambient tem-perature using temperature response curve fitting and fuzzy neural network(FNN). There are some problems to realize the recogni-tion system using temperature response. It requires too many memories to store the vast temperature response data and it has to be filtered to remove noise which occurs in experiment. And the temperature response is influenced by the change of ambient tempera-ture. So, this paper proposes a practical method using curve fitting the remove above problems of memories and nose. And FNN is propose to overcome the problem caused by the change of ambient temperature. Using the FNN which is learned by temperature responses on fixed ambient temperature and known thermal conductivity, the thermal conductivity of the material can be inferred on various ambient temperature. So the material can be recognized by the thermal conductivity.

• Journal of Contemporary Eastern Asia
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• v.18 no.2
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• pp.49-67
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• 2019

Since returning to power in 2012, the second Abe administration has pressured Japanese mainstream media in various ways, from creating the Secrecy Act to forming close relationships with media executives and promoting anti-journalism voices on social media. This article focuses on the growth of a jingoist group called the 'Net-rightists' ('Neto-uyo' in the Japanese abbreviation) on the Internet, which has been supporting the right-wing government and amplifying its historical revisionist views of Japanese colonialism. These heavy Internet users deny Japan's war crimes against neighboring Asian countries and disseminate fake news about the past, which justifies Prime Minister Shinzo Abe's hostile diplomatic policies against South Korea and China. Over the past years, the rightist online discourses have become powerful to such an extent that the editorials of major newspapers and TV reports shifted to more nationalist tones. Who are the Neto-uyo? Why have they emerged from the online world and proliferated to the offline world? Two significant characteristics of new media are discussed to analyze their successful media manipulation: cultural transcoding and perpetual rewriting of collective memories. These characteristics have resulted in constructing and reinforcing the data loops of the 'Daily Us' versus Them, technologically raising current diplomatic tensions in East Asia.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.7
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• pp.680-688
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• 2001

In this paper, we propose a reliable method for searching the optimally performing generalized brain-state-in-a-box (GBSB) neural associative memory using an evolution program (EP) given a set of prototype patterns to be stored as stable equilibrium points. First, we exploit some qualitative guidelines necessary to synthesize the GBSB model. Next, we parameterize the solution space utilizing the limited number of parameters to represent the solution space. Then, we recast the synthesis of GBSB neural associative memories as two constrained optimization problems, which are equivalent to finding a solution to the original synthesis problem. Finally, we employ an evolution program (EP), which enables us to find an optimal set of parameters related to the size of domains of attraction (DOA) for prototype patterns. The validity of this approach is illustrated by a design example and computer simulations.

• International Journal of Internet, Broadcasting and Communication
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• v.10 no.4
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• pp.6-11
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• 2018

As embedded memory technology evolves, the traditional Static Random Access Memory (SRAM) technology has reached the end of development. For deepening the manufacturing process technology, the next generation memory technology is highly required because of the exponentially increasing leakage current of SRAM. Non-volatile memories such as STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory), PCM (Phase Change Memory) are good candidates for replacing SRAM technology in embedded memory systems. They have many advanced characteristics in the perspective of power consumption, leakage power, size (density) and latency. Nonetheless, nonvolatile memories have two major problems that hinder their use it the next-generation memory. First, the lifetime of the nonvolatile memory cell is limited by the number of write operations. Next, the write operation consumes more latency and power than the same size of the read operation.These disadvantages can be solved using the compiler. The disadvantage of non-volatile memory is in write operations. Therefore, when the compiler decides the layout of the data, it is solved by optimizing the write operation to allocate a lot of data to the SRAM. This study provides insights into how these compiler and architectural designs can be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.12-12
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• 2008

Ruthenium is one of the noble metals having good thermal and chemical stability, low resistivity, and relatively high work function(4.71eV). Because of these good physical, chemical, and electrical properties, Ru thin films have been extensively studied for various applications in semiconductor devices such as gate electrode for FET, capacitor electrodes for dynamic random access memories(DRAMs) with high-k dielectrics such as $Ta_2O_5$ and (Ba,Sr)$TiO_3$, and capacitor electrode for ferroelectric random access memories(FRAMs) with Pb(Zr,Ti)$O_3$. Additionally, Ru thin films have been studied for copper(Cu) seed layers for Cu electrochemical plating(ECP) in metallization process because of its good adhesion to and immiscibility with Cu. We investigated Ru thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru thin films were grown by ALD(Lucida D100, NCD Co.) using RuDi as precursor and $O_2$ gas as a reactant at 200~$350^{\circ}C$.