• Title/Summary/Keyword: Measuring Dielectric Constant

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Electrical Properties and Fabrication of Ultra-thin Films using p-HP Polymer (p-HP 고분자 LB초박막의 제작과 전기적 특성)

  • Yu, Seung-Yeop;Jeong, Sang-Beom;Park, Jae-Cheol;Gwon, Yeong-Su
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.7
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    • pp.287-291
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    • 2002
  • We fabricated the crosslinked films using p-hexadecoxyphenol (p-HP), which is amphiphilic and can form polyion complexes with formaldehyde at the air-water interface. The behavior of polyion complexation at the air-water interface and the surface structure of LB films was investigated by Brewster angle microscope(BAM) and scanning Maxwell-stress microscope (SMM), respectively. Also, the electrical properties for crosslinking in phenol-formaldehyde LB films were investigated by measuring conductivity and dielectric constant. The conductivities of p-HP LB films are as follows: heat-treatment of 1% formaldehyde subphase(3.76$\times$10$^{-15}$ ~4.76$\times$10$^{-1}$5[S/cm])$\times$10$^{-14}$ ~1.74$\times$10$^{-14}$ [S/cm]). Also, relative dielectric constants of p-HP LB films were reduced from 6.76~7.84 (pure water) to 2.97~3.25 (heat-treatment of 1% formaldehyde subphase))

Microwave Dielectric Characteristics of Ba(Mg1/3Nb2/3)O3-La(Mg2/3Nb1/3)O3 Ceramics with Crystal Structure (결정 구조에 따른 Ba(Mg1/3Nb2/3)O3-La(Mg2/3Nb1/3)O3세라믹스의 마이크로파 유전 특성)

  • Paik, Jong-Hoo;Lim, Eun-Kyeong;Lee, Mi-Jae;Jee, Mi-Jung;Choi, Byung-Hyun;Kim, Sei-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.30-37
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    • 2005
  • The microwave dielectric properties and their related structural characteristics in solid solutions of (1-$\chi$) Ba($Mg_{1/3}$Nb$_{2/3}$) $O_3$-$\chi$La(Mg$_{2/3}$Nb$_{1}$3) $O_3$(BLMN) have been investigated by measuring the dielectric constant($\varepsilon$r), Q value and temperature coefficient of resonant frequency($\tau$f) and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant($\varepsilon$$_{r}$) showed maximum value at the composition which corresponds to the phase boundary between 1 : 2 ordered and 1 : 1 ordered structure. The increase in $\varepsilon$$_{r}$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency($\tau$$_{f}$) was investigated in terms of oxygen octahedra tilting.dra tilting.

A Study on the Dielectric Properties of Ferroelectric Materials (강유전체의 유전율 특성에 관한 연구)

  • Cho, Ik-Hyun;Park, Young;Jeong, Kyu-Won;Jung, Se-Min;Yi, Jun-Sin;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.287-290
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    • 1998
  • It was investigated that the dielectric properties of ferroelectric materials using PZT-5A and PZT thin films. PZT-5A was 20mm diameters, 0.71mm, 0.51mm and 0.41mm thickness respectively and having c-axis preferred orientation. Electrodes(Al) were deposited by evaporation method. PZT thin film was deposited on Pt/SiO$_2$/Si substrate by RF magnetron sputtering method, and annealed at 750$^{\circ}C$ with RTA. Dielectric constants were measured automatically by computer measuring system. Dielectric constants were changed rapidly from 817 to 888 in 0.41mm thickness PZT-5A, 823 to 890 in 0.51mm and 822 to 839 in 0.71mm as the electric field grown. In the case of PZT thin film, dielectric constants were changed from 724 to 1173 in 4500${\AA}$ thickness, 721 to 1204 in 5500${\AA}$ thickness and 811 to 1407 in 7000${\AA}$ thickness.

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Fabrication and Electrical Properties of Cyano Acrylate Terpolymer Film (시아노계 아크릴레이트 3량체막의 제작과 전기적 특성)

  • 서정열;김진운;이범종;권영수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.467-469
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    • 2001
  • KAM200 which can be used electroluminescence binder is cyano material. In this study, we have fabricated KAM200 thin film by Spin-Coating method. And we have studied the electical properties of KAM200 thin films. In the I-V characteristics, the current decreases as the voltage overflow definite voltage immediately. And that definite voltage depend on thickness of KAM200 material. In the case of thickness is 1.9[$\mu\textrm{m}$], definite voltage is 7[V]. And that's electrical field 3.86[MV/m]. The dielectric properties of KAM200 thin film is investigated by measuring dielectric dispersion and absorption. KAM200's Relative dielectric constant is 10.25, and it has high permittivity compared with different materials.

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Structural, Morphological and Electrical Properties of TiO2 Thin Films Deposited by ALD Method

  • Seung-Yeon Oh;Jae-Min Shin;Gyeong-Hun Na;Min-Seok Kwon;Sang-Jeen Hong;Bumsuk Jung
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.2
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    • pp.87-95
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    • 2023
  • TiO2 thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO2 thin films grown by the ALD deposition method were studied. The grown TiO2 thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO2 thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO2 as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

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The Dielectric Properties of the Cr added BiNbO$_4$Ceramics (Cr이 첨가된 BiNbO$_4$유전체 세라믹스의 유전 특성)

  • 심규진;박정흠;윤광희;윤현상;박용욱;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1995.11a
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    • pp.14-17
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    • 1995
  • In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

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Synthesis and Physical Properties of Sm Doped Pb Free 3 Phase-Glasses (Sm 농도에 따른 무연 3상 유리계의 합성과 물리적 성질)

  • Park, Jong-Ho
    • Korean Journal of Materials Research
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    • v.22 no.7
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    • pp.368-373
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    • 2012
  • Glasses were prepared with compositions of $(13-x)BaO-80B2_O_3-7Li_2O{\cdot}xSm_2O_3$, BBLSx(x=0.5, 0.4, 0.3) by melting the starting materials of boron oxide(99.9%), lithium oxide(99.9%), barium carbon oxide(99.9%), and samarium oxide(99.9%) and then quenching the melt at $1350^{\circ}C$. This led to good-quality BBLSx(x=0.4, 0.3) and poor-quality BBLSx(x=0.5) glasses. The physical and structural properties of the BBLSx glasses were studied by means x-ray diffraction, scanning electron microscopy(SEM), differential scanning calorimetry(DSC), and dielectric spectroscopy. From the x-ray diffraction and SEM results, the quality of the BBLSx glasses significantly depends on the $Sm_2O_3$ concentration. The x-ray diffraction pattern showed that the crystallites in the BBLSx glasses after heat treatment at $700^{\circ}C$ may be $LiBaB_9O_{15}$. From the DSC results, the glass transition temperatures($T_g$), crystallization temperatures($T_c$), and the maximum temperatures of the crystallized($T_p$) BBLSx glasses all changed with the $Sm_2O_3$ concentration. According to the dielectric spectroscopy results, the values of the real dielectric constant and Tan ${\delta}$ of the BBLSx glasses depended on the $Sm_2O_3$ concentration. The values of the real dielectric constant and Tan ${\delta}$ were also shown to depend on the measuring temperature, possibly due to the ion migration in the bulk of the BBLSx glasses.

Analysis of Test Results for Small Dipstick-Gage-Type Engine-Oil-Deterioration-Detection Sensor (딥스틱게이지형 소형 엔진오일열화감지센서의 시험결과 분석)

  • Chun, Sang Myung
    • Tribology and Lubricants
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    • v.30 no.3
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    • pp.156-167
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    • 2014
  • This paper presents the test results of small dipstick-gage-type engine-oil-deterioration-detection sensor. The measured sensor signal characteristics for the capacitance and temperature are analyzed. The engine oil deterioration condition correlates with the electrical property of the dielectric constant that comprised with physical properties such as TAN (Total Acid Number), TBN (Total Base Number) and viscosity. Several problems encontered during the test of the sensor system are improved. The results of vehicle tests show that the capacitance signal is stable after the engine stops. Therefore, the sensor should start measuring the parameters for monitoring the engine oil condition after the engine stops. The engine is considered to be in a stopped state if the difference between the maximum and minimum values of the oil capacitance measured every 1 min is below 0.02 pF. The key test results in this paper will help in the development of an engine oil change warning algorithm.

Deposition and Properties of Pt/ST/Pt Thin Film Structure (Pt/ST/Pt 소자 구조의 박막증착 및 특성)

  • Kim, Jin-Sa;Cho, Choon-Nam;Oh, Yong-Cheul;Shin, Cheol-Gi;Song, Min-Jong;So, Byeong-Mun;Choi, Woon-Shick;Kim, Chung-Hyeok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.472-473
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    • 2007
  • The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

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