• Korean Journal of Environmental Agriculture
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• v.27 no.4
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• pp.349-355
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• 2008

The causes of salt accumulation in soils of plastic film houses nearby Sumjin river estuary in Mokdo-ri($127^{\circ}46'E\;35^{\circ}1'N$), Hadong, Gyeongnam, Korea were investigated in 2006. With chemical properties soils and water analyzed and fertilization status monitored, the study showed that mean salt concentration of soil was much higher at EC $4.3\;dS\;m^{-1}$ than the Korean average (EC $2.9\;dS\;m^{-1}$) in 2000s for plastic film house's soil with exchangeable Na $0.8\;cmol^+\;kg^{-1}$ and water-soluble Cl $232\;mg\;kg^{-1}$, and then might result to salt damage in sensitive crop plants. Salt concentration of ground water used as main irrigation water source contained very high EC with corresponding value of $2.6\;dS\;m^{-1}$. Particularly, increase of EC value was directly proportional with the increased pumping of ground water used as a water-covering system in order to protect the temperature inside plastic film houses from the early winter season. High Na and Cl portion of ions in water might had contributed to the specific ion damage in the crops. Secondly, heavy inputs of chemicals and composts significantly increased the accumulated salts in soil. Conclusively, salt accumulation might had been accelerated by use of salted-groundwater irrigation and heavy fertilization rate. To minimize this problem, ensuring good quality of irrigation water is essential as well as reducing fertilization level.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.409-415
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• 2012

$TiO_2$ thin films for high energy density capacitors were prepared by r.f. magnetron sputtering at room temperature. Flexible PET (Polyethylene terephtalate) substrate was used to maintain the structure of the commercial film capacitors. The effects of deposition pressure on the crystallization and electrical properties of $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on PET substrate at room temperature was unrelated to deposition pressure and showed an amorphous structure unlike that of films on Si substrate. The grain size and surface roughness of films decreased with increasing deposition pressure due to the difference of mean free path. X-ray photoelectron spectroscopy (XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of $TiO_2$ films was significantly changed with deposition pressure. $TiO_2$ films deposited at low pressure showed high dissipation factor due to the surface microstructure. The dielectric constant and dissipation factor of films deposited at 70 mTorr were found to be 100~120 and 0.83 at 1 kHz, respectively. The temperature dependence of the capacitance of $TiO_2$ films showed the properties of class I ceramic capacitors. $TiO_2$ films deposited at 10~30 mTorr showed dielectric breakdown at applied voltage of 7 V. However, the films of 500~300 nm thickness deposited at 50 and 70 mTorr showed a leakage current of ${\sim}10^{-8}{\sim}10^{-9}$ A at 100 V.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.359-365
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• 2007

In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

• Journal of Preventive Medicine and Public Health
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• v.27 no.1 s.45
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• pp.59-73
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• 1994

The purpose of this study is to experiments the environmental conditions and the adaption of the human body in the vinyl house. The study was done in spring and winter and experimental clothes were used working clothes in the vinyl house. The results are as follows. 1. Environmental Conditions In the spring season, the indoor air temperature was $27.4{\pm}3.7^{\circ}C$ and the outdoor air temperature was $14.4{\pm}2.7^{\circ}C$. In the winter season, the indoor air temperature was $18.3{\pm}4.8^{\circ}C$ and the outdoor air temperature was $7.6{\pm}2.5^{\circ}C$ on the average. 2. Skin Temperature In the spring season, the mean skin temperatures indoor and outdoor were $33.81{\pm}0.7^{\circ}C\;and\;31.57{\pm}0.8^{\circ}C$ respectively, a difference of $2.24^{\circ}C$. In the winter season, they were $31.95{\pm}1.93^{\circ}C\;and\;29.86{\pm}0.55^{\circ}C$ respectively, a difference of $2.09^{\circ}C$. 3. Clothing Climate In the spring season, the temperature and humidity in the inner layer of clothing were $34.77{\pm}0.80^{\circ}C\;and\;70.75{\pm}1.65%$ indoor, $31.9{\pm}0.52^{\circ}C\;and\;51.9{\pm}3.70%$ outdoor respectively. In the winter season, those were $32.52{\pm}1.04^{\circ}C\;and\;64.65{\pm}3.68%$ indoor, $30.27{\pm}0.96^{\circ}C\;and\;45.07{\pm}2.68%$ outdoor respectively. 4. Physiological Factors Body temperature increased slightly and the pulse rate also rises, but blood pressure decreased a little with the rise of environmental temperature both in the spring and winter seasons. 5. Psychological Factors Thermal sensation in the spring season was expressed as 'slightly warm' or 'warm' indoor and as 'neutral' in the open air, while in the winter it was expressed as 'neutral' or 'slightly warm' outdoor the house and as 'cold' in the open air. Comfort sensation was characterized as 'uncomfortable' or 'slightly uncomfortable' indoor both in the spring and winter seasons, but in the open air it was characterized as 'comfortable' in the spring and as 'slightly uncomfortable' in the winter.

• Journal of Bio-Environment Control
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• v.12 no.2
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• pp.72-76
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• 2003

This study was conducted to estimate stimulation of plant growth of green and red leafy lettuces (Lactuca sutiva L. cv. Chungchima and Jugchima) at affected by covering method and time with protected film materials containing concentrated PO film and GA$_3$ foliar spray. Plants were covered with ‘Pasraido’ material from October 26 to November 31 (direct 1), from November 5 to November 31 (direct 2), or with a tunnel, or direct 2＋ tunnel. Mean air temperature and relative humidity under the covering were higher in direct and tunnel, direct and non-covering, in that order. The fresh weight and dry weight of red and green lettuces increased in direct and tunnel followed by direct 1, direct 2, tunnel and the control. GA$_3$ treatment promoted the growth in all covering methods, but decreased the chlorophyll contents. Fresh weight and dry weight were higher in red lettuce than in green lettuce in the control.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.188-188
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• 2012

Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.27-32
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• 2020

This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO₂), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiN_x) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

• Journal of The Korean Society of Grassland and Forage Science
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• v.41 no.3
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• pp.183-188
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• 2021

The increase in temperature due to climate warming is predicted to affect crop yields in the future. Until now, various types of OTC (open top chamber) that simulate the future climate condition have been developed and used to study the effect of temperature increase due to global warming on maize growth. However, in most OTCs, high equipment and maintenance costs were required to artificially increase the temperature. This study was carried to develop a cost-effective and simple OTC suitable for climate warming experiments for forage maize. Three octagonal OTCs with a height of 3.5 m × a diameter of 4.08 m and a partially covered top were constructed. The lower part of OTC covered film was opened at a height of 26 cm (OTC-26), 12 cm (OTC-12) from the ground surface, or not opened (0 cm, OTC-0). Mean air temperatures during the daytime on a sunny day in OTC-0, OTC-12 and OTC-26 increased to 3.23℃, 1.33℃, and 0.89℃, respectively, compared to the ambient control plot. For a pilot test, forage maize, 'Gwangpyeongok' was grown at OTCs and ambient control plots. As a result, in the late maize vegetative growth phase (July 30), the plant height was increased more than 45% higher than the ambient control plot in all OTC plots, and the stem diameter also increased in all OTC plots. These results indicate that it is possible to set the temperature inside the OTC by adjusting the opening height of the lower end of the OTC, and it can be applied to study the response of forage maize to elevated temperature. An OTC, with its advantages of energy free, low maintenance cost, and simple temperature setting, will be helpful in studying maize growth responsiveness to climate warming in the future.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.