• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.7A
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• pp.627-634
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• 2011

In this paper, a new frequency offset estimation method in OFDM system is suggested. To measure fractional part of frequency offset, the repetition feature of cyclic prefix and that of training sequence is adopted. Both method shows relatively large frequency offset estimation error under low SNR circumstances, but this error can be greatly reduced by joint measurement of cyclic prefix and inversely repeated training symbol such as primary advanced preamble (PA-preamble) of IEEE 802.16m IMT-Advanced WiMax system. In this paper, the performance of suggested frequency offset estimation method is verified in IEEE 802.16m IMT Advanced WiMax system, using its PA-preamble and cyclic prefixes of A-preambles.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.

• Phonetics and Speech Sciences
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• v.14 no.4
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• pp.67-75
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• 2022

This study compared voice range profiles (VRPs) of modal and falsetto register in 53 dysphonic and 53 non-dysphonic adult women with gliding vowel /a/'. The results shows that maximum fundamental frequency (F0_MAX), maximum intensity (I_MAX), F0 range (F0_RANGE), and intensity range (I_RANGE) are lower in the dysphonic group than in the non-dysphonic group. F0_MAX and F0_RANGE are significantly higher in falsetto register than modal register in both groups. I_MAX and I_RANGE are significantly higher in falsetto register in the non-dysphonic group, but those are not different between two registers in the dysphonic group. There was no statistically significant difference in minimum F0 (F0_MIN) and minimum intensity (I_MIN) between the two groups. Modal-falsetto register transition occurred at 378.86 Hz (F4#) in the dysphonic group and 557.79 Hz (C5#) in the non-dysphonic group, which was significantly lower in the dysphonic group. It can be seen that both modal and falsetto registers in dysphonic adult women are reduced compared to non-dysphoinc adult women, indicating that the vocal folds of dysphonic adult women are not easy to vibrate in high pitches. The results of this study would be the basic data for understanding the acoustic features of voice disorders.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.403-409
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• 2011

Micro speakers are used to reproduce sound in small electric and information and communications devices, such as cellular phones, PMPs, and MP3 players. The acoustical properties and sound quality, which are changed due to the decreased size of the speaker, are often adjusted varying the type and thickness of the diaphragm. The most widely used diaphragm material is thin polymer. It was previously reported by the author of this paper that the resonance frequency of a micro speaker is changed by the type and thickness of a polymer diaphragm. In this paper, the frequency response near the resonance frequency of a micro speaker was studied as functions of the type and thickness of the polymer diaphragm. While $R_{max}$ and $R_{DC}$ were affected by the type and thickness, an analysis of the electrical impedance curve revealed that $R_o(= R_{max}/R_{DC})$ and ${\Delta}f$ were not changed. Thus, $Q_{TS}$ which was function of $R_o$, ${\Delta}f$, and the resonance frequency, is only related to the resonance frequency. The increase of the resonance frequency led to a proportional rise of $Q_{TS}$. The change of the frequency response near the resonance frequency was not dependent on the type or thickness of the polymer diaphragm, but was affected by the resonance frequency.

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.1453-1458
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• 2011

This paper dealt with the measurement and analysis of electromagnetic waves generated by partial discharges in insulation oil to develop insulation diagnostic techniques for power transformer. Two types of narrow-band monopole antennas with the resonant frequency of 500 MHz and 1 GHz were designed and fabricated. We simulated defects which consist of a needle electrode with curvature radius of 10 ${\mu}m$ and a plane electrode with diameter of 60 mm in insulation oil. From the experiment, the maximum output voltage of the fabricated antennas was measured; 620 $mV_{max}$ for 500 MHz resonant frequency and 920 $mV_{max}$ for 1 GHz resonant frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.231-234
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• 1998

In this study, the wind-mill type ultrasonic motor was fabricated, and then resonant frequency and vibration velocity characteristics of the stator were measured. Brass metal was pressed with umbrella-type using metal mold, then slot of 4 kind was processed in each of thickness. Among sixteen's stators, resonant frequency on vibration velocity was decreased remarkably in stator of higher resonant point, but resonant frequency on vibration velocity wasn't almost changed at lower resonant point of stator. The thickener thickness of elastic body, vibration velocity was decreased. The more slot of elastic body, vibration velocity was increased Applied voltage was changed from 10$V_{max}$ to 100$V_{max}$. Maximum vibration velocity value was 2.0[m/s].

• Journal of Life Science
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• v.7 no.4
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• pp.355-357
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• 1997

Seed size is a important yield components in soybean (Glycine max L.). The seed size frequency distributions in the mating between two G. max parents possessing quite different seed size exhibited a continuous distribution in the F$_{2}$ and F$_{3}$ generations. A progeny seed size equal to that of either parent was not observed in either generation. The population mean seed size in each generation was less than the mid-parent, with the distribution of lines skewed toward the small seeded parent.

• Journal of Advanced Navigation Technology
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• v.18 no.2
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• pp.142-150
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• 2014

In this paper, the performance analysis results of time/frequency synchronization and cell search algorithm are presented for aeronautical mobile airport communication systems (AeroMACS). AeroMACS is based on IEEE 802.16e mobile WiMAX standard and uses the aeronautical frequency band of 5GHz with the bandwidth of 5MHz. The simulation model of AeroMACS is designed and the performance evaluation is conducted with the various airport channel models such as apron (APR), runway (RWY), taxiway (TWY), and park (PRK). The proposed synchronization unit was designed in hardware description language (HDL) and implemented on FPGA. Also, the real-time operation was verified and evaluated using FPGA test system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.823-829
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• 2004

In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.644-650
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• 2003

In this paper, we have studied characteristics of PHEMT's fabricated by two difference types of gate recess for improving performance of the device in millimeter wave applications. PHEMT's were fabricated using wide and narrow recesses. Maximum transconductance(g$_{m}$) of PHEMT's using the wide recess was 332.7 mS/mm, and that of PHEMT's using narrow recess was 504.6 mS/mm. From small signal performance measurements, cutoff frequency(f$_{T}$) and maximum stable oscillation frequency(f$_{max}$) of PHEMT's using wide recess were 113 GHz and 172 GHz, respectively. f$_{T}$ and f$_{max}$ of PHEMT using narrow recess were 101 GHz and 142 GHz, respectively. The measured data of the fabricated PHEMTs' were carefully studied and analyzed.d.tudied and analyzed.