• Title/Summary/Keyword: Materials science and engineering

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Low temperature growth of GaN on sapphire using remote plasma enhanced-ultrahigh vacuum chemical vapor deposition

  • Park, J.S.;Kim, M.H.;Lee, S.N.;Kim, K.K.;Yi, M.S.;Noh, D.Y.;Kim, H.G.;Park, S.J.
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.85-99
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    • 1998

  • A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

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Deposition of Fine Linewidth Silver Layer using a Modified Laser-induced Forward Transfer Technique

  • Cheon, Jonggyu;Nguyen, Manh-Cuong;Nguyen, An Hoang-Thuy;Choi, Sujin;Ji, Hyung-Min;Kim, Sang-Woo;Yu, Kyoung-Moon;Kim, Jin-Hyun;Cho, Seong-Yong;Choi, Rino
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1279-1282
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    • 2018

  • This paper reports the deposition of a metal line using a multilayer stack and laser-induced forward transfer (LIFT) using a low cost continuous wave blue laser with a wavelength of 450 nm. The donor structure was composed of a light-to-heat (LTH) layer, a release layer, and a transfer layer in series. Amorphous silicon as the LTH layer absorbs photon energy and converts it to heat. A release layer was melted so that a silver transfer layer would be transferred to the receiver substrate. The transferred silver layer showed reasonable physical and electrical characteristics. A low cost fine linewidth metal layer could be achieved using this modified LIFT technique and blue laser.

  • https://doi.org/10.3938/jkps.73.1279 인용 KSCI