• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.208-208
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• 2013

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
• /
• pp.209.1-209.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.214.1-214.1
• /
• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.238.1-238.1
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• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.12a
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• pp.176-176
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• 2007

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.288.1-288.1
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• 2008

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.53-53
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• 2009

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
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• pp.19.1-19.1
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• 2007

• Archives of Metallurgy and Materials
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• v.67 no.4
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• pp.1469-1473
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• 2022

Tungsten diselenide (WSe₂) is one of the promising transition metal dichalcogenides (TMDs) for nanoelectronics and optoelectronics. To enhance and tune the electronic performance of TMDs, chemical functionalization via covalent and van der Waals approaches has been suggested. In the present report, the electric and structural transition of WSe₂ oxidized by exposure to O₃ is investigated using scanning tunneling microscopy. It is demonstrated that the exposure of WSe₂/high-ordered pyrolytic graphite sample to O₃ induces the formation of molecular adsorbates on the surface, which enables to increase in the density of states near the valence band edge, resulting from electric structural modification of domain boundaries via exposure of atomic O. According to the work function extracted by Kelvin probe force microscopy, monolayer WSe₂ with the O₃ exposure results in a gradual increase in work function as the exposure to O₃. Therefore, the present report demonstrates the potential pathway for the chemical functionalization of TMDs to enhance the electric performance of TMDs devices.