• Title/Summary/Keyword: Material simulation

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COMPUTER AIDED SCHECULING MODEL OF MATERIALS HANDSLING IN CHEMICAL ANALYSIS FLOOR

  • Fujino, Yoshikazu;Motomatu, Hiroyoshi;Kurono, Shigeru
    • 제어로봇시스템학회:학술대회논문집
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    • 1995.10a
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    • pp.31-34
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    • 1995
  • The automated chemical analysis shop floor are developed for the environmental pollution problems in our chemical analysis center. This shop floor have the several equipments include weight, pour, dry, heater, boiler, mixture, spectroscopy etc. And the material handling components are made up by the stored stack, conveyore, turntables, robot etc. Computer simulation has been an important tool for these complete design problem. We have designed the arangement of chemical equipments and material flow systems by using the simulator "AutoModII". "AutoMoII" is one of the advanced simulator, CAD-like drawing tools with a powerful, engineering oriented language to model control logic and material flow. The result is the modeling of the chemical analysis system in accurate, three dimensional detail. We could designed the set able layout and scheduling system by using the AutoMoII simulator. AutoMoII simulator.

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Process Design of Piston-Pin for Automobile by the Flow Control (유동제어를 통한 자동차용 피스톤-펀의 공정설계)

  • 김동진;김병민;이동주
    • Transactions of Materials Processing
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    • v.10 no.2
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    • pp.151-159
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    • 2001
  • Flow defect of a piston-pin for automobile parts is investigated in this study. In combined cold extrusion of piston-pin, lapping defect, which is a kind of flow defect, appears by the dead metal zone. This appearance evidently happens in products with a thin thickness to be pierced for the dimensional accuracy and the decrease of material loss. The flow defect that occurs in piston-pin has bad effects on the strength and the fatigue life of piston-pin. Therefore, it is important to predict and prevent defects in the early stage of process design. The best method that can prevent flow defect is removing or reducing dead metal zone through material flow control. The finite element simulations are applied to analyze the flow defect. This study proposes processes for preventing flow defect by removing dead metal zone. Then the results are compared with the experimental ones for verification. These FE simulation results are in good agreement with the experimental ones.

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A Study on Kaolin Contaminant Accumulation Contents and Leakage Current Variation (카올린 오손물 누적량 및 누설전류 변화에 관한 연구)

  • Park, Jae-Jun;Song, Il-Keun;Lee, Jae-Bong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.145-146
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    • 2005
  • This study performs a simulation for an accumulation mechanism of contaminants, which were produced in an industrial belt of inland, on the surface of insulators. From the simulation, silicon insulators presented higher accumulation than that of EPDM(Ethylene Propylene Diene Terpolymer : EPDM) insulators on the same distance in the case of the Virgin polymer insulator, and this result presented the same result in the insulator applied in actual fields. In the case of the accumulation test for the Virgin insulator and insulators used in actual fields, it is evident that the Virgin insulator presented more accumulation than that of the insulator used in actual fields. The results can be caused by the generation of LMW (Low Molecular Weight) on the external material of polymer insulators, and the level of the accumulation can be changed according to the degree of the continuous generation of LMW.

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Numerical analysis on the material flow in stepped rod forming (단붙이 로드의 성형에서 소재유동에 관한 해석)

  • Go, Byung-Du;Gang, Dong-Myung;Lee, Ha-Sung
    • Design & Manufacturing
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    • v.2 no.2
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    • pp.43-47
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    • 2008
  • This paper is concerned with the analysis of material flow characteristics of stepped rod forming. The analysis in this paper concentrated on the evaluation of the design parameters for deformation patterns of tube forming, load characteristics, extruded length, and die pressure. The design factors such as punch nose radius, die corner radius, friction factor, and punch face angle are involved in the simulation. The stepped rod forming is analyzed by using a commercial finite element code. This simulation makes use of stepped rod material and punch geometry on the basis of punch geometry recommended by International Cold Forging Group. As radius ratio is large, forming load was reduced but extruded length ratio was increased.

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I-t Curve Simulation of the Low Voltage Distriubtion Line Fuse (저압배선용 전선퓨즈의 I-t곡선 시뮬레이션)

  • 박두기;이세현;박영범;구경완;김종식;한상옥
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.214-217
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    • 1996
  • In this paper. we deal wish the I-t characteristic of law voltage distribution fuse. It is used to be thermal characteristic in being produced at fuse element part. The elements are divided low temperature melting element(LTME) by high temperature melting element(HTME). Those parts make of coordination. The characteristic of fuse is decided by material and design etc. used at element. We analysis I-t characteristic curve by using the numerical method. And we compared the curve of simulation with that of experiment

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Simulation of Material Properties of Amorphous Carbon Nitride with Non-uniform Nitrogen Distribution

  • Lu, Y.F.;He, Z.F.
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.3
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    • pp.1-6
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    • 2001
  • A simulation method is proposed to study the amorphous structure of carbon nitride. The material properties of a non-uniform nitrogen distribution in an amorphous CN matrix can be studied. The cohesive energy of a group of randomly generated atoms can be minimized to find the relative positions of atoms. From the calculated configuration of atoms, many properties of amorphous carbon nitride can be calculated such as bulk modulus, P-V curve, sp$^3$/sp$^2$ ratio of carbon, and vibrational spectra. The calculation shows that the cohesive energy of non-uniform nitrogen distribution is lower than that of a uniform distribution. This may suggest that the regular structure of carbon nitride can at most be metastable. It is not easy to incorporate nitrogen atoms into a carbon matrix.

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Numerical simulation of material damage for structural steels S235JR and S355J2G3

  • Kossakowski, Pawel G.;Wcislik, Wiktor
    • Advances in Computational Design
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    • v.3 no.2
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    • pp.133-146
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    • 2018
  • The paper discusses numerical analysis of tensile notched specimens with the use of Gurson - Tvergaard - Needleman (GTN) material model. The analysis concerned S235JR and S355J2G3 steel grades, subjected to medium stress state triaxiality ratio, amounting 0.739. A complete procedure for FEM model preparation was described, paying special attention to the issue of determining material constants in the GTN model. An example of critical void volume fraction ($f_c$) experimental determination procedure was presented. Finally, the results of numerical analyses were discussed, indicating the differences between steel grades under investigation.

Electrical Characteristics of AIGaAs/GaAs HBTs with different Emitter/Base junction structures (접합구조에 따른 AIGaAs/GaAs HBT의 전기적 특성에 관한 연구)

  • 김광식;안형근;한득영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.63-66
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    • 2000
  • In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

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Effects of Cu impurity on the switching characteristics of the optically controlled bistable semiconductor switches (광제어 쌍안정 반도체 스위치에서 구리 불순물이 스위치특성에 미치는 영향)

  • 고성택
    • Electrical & Electronic Materials
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    • v.7 no.3
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    • pp.213-219
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    • 1994
  • Cu compensated Si doped GaAs (GaAs :Si:Cu has been chosen as the switch material. The GaAs material has been characterized by DLTS(Deep Level Transient Spectroscopy) technique and the obtained data were used in the computer simulation. Simulation studies are performed on several GaAs switch systems, composed of different densities of Cu, to investigate the influence of deep traps in the switch systems. The computed results demonstrates important aspect of the switch, the existence of two stable states and fast optical quenching. An important parameter optimum Cu density for the switch are also determined.

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Automated inventory and material science scoping calculations under fission and fusion conditions

  • Gilbert, Mark R.;Fleming, Michael;Sublet, Jean-Christophe
    • Nuclear Engineering and Technology
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    • v.49 no.6
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    • pp.1346-1353
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    • 2017
  • The FISPACT-II inventory simulation platform is a modern computational tool with advanced and unique capabilities. It is sufficiently flexible and efficient to make it an ideal basis around which to perform extensive simulation studies to scope a variety of responses of many materials (elements) to several different neutron irradiation scenarios. This paper briefly presents the typical outputs from these scoping studies, which have been used to compile a suite of nuclear physics materials handbooks, providing a useful and vital resource for material selection and design studies. Several different global responses are extracted from these reports, allowing for comparisons between materials and between different irradiation conditions. A new graphical output format has been developed for the FISPACT-II platform to display these "global summaries"; results for different elements are shown in a periodic table layout, allowing side-by-side comparisons. Several examples of such plots are presented and discussed.