• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.289-300
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• 2002

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.88-93
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• 1999

This paper describes the electron transport characteristics in $SiH_4$ gas calculated for the range of E/n:0.5~300(Td) and Pressure:0.5, 1, 2.5(Torr) by the Monte carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the reported results. The motion has been calculated to give swarm parameters for the electron drift velocity, longitudinal and transverse diffusion coefficients, the electron ionization coefficients, characteristics energy and the electron energy distribution function. The electron energy distributions function has been analysed in $SiH_4$ at E/N: 30, 50(Td)for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Monte carlo simulation and Boltzmann equation have been compared with experimental data by ohmori ad Pollock.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.375-376
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• 2005

탄소나노튜브는 캔틸레버처럼 주어진 압력에 의해 elastic curve를 형성하게 되는데, 이러한 성질은 탄소나노튜브가 가지고 있는 young's modulus와 구조적인 형태에서 기인한다. 따라서 탄소나노튜브의 변위와 인가된 analyte의 농도에 따른 압력 사이의 관계를 이용해 가스센서로의 적용이 가능하다. 이 번 연구에서는 시뮬레이션을 통해 길이가 30nm 이고 반경이 1.5nm로 모델링 된 단일 벽 탄소나노튜브가 3000ppm와 1000ppm ethanol의 농도에 의해 형성된 elastic curve의 최대변위를 구하고, 농도와 단일 벽 탄소나노튜브의 elastic curve의 최대변위가 비례함을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.507-508
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• 2006

$SF_6$ gas is widely used in industrial of insulation field. In this paper, $N_2$ is mixed to improve pure $SF_6$ gas characteristics. Electron transport coefficients in $SF_6-N_2$ mixture gases are simulated in range of E/N values from 70 to 400 [Td] at 300K and 1 Torr by using Boltzmann equation method. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. The result of Boltzmann equation and Monte Carlo Simulation has been compared with experimental data by Ohmori, Lucas and Carter. The swarm parameter from the swarm study are expected to sever as a critical test of current theories of low energy scattering by atoms and molecules.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.969-976
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• 2007

In this thesis, an anchoring energy in the upper and lower substrates of TFT-LCD cell has been modeled and applied in the numerical calculation of the molecular orientation of the TN-LCD. The molecular orientation of liquid crystals defined as tilt and twist angles was simulated using the Newton-Raphson method and the Gaussian integration method. From the results, the tilt and twist angles for the strong anchoring energy were proven to be coincide with those of the conventional results. on the other hand, for the weak anchoring energy, azimuth angles of the molecules were changed abruptly from $0^{\circ}\;to\;90^{\circ}$ near the middle area of the cell due to the balance of the anchoring energy and the elastic energy of the liquid crystals.

• 산업공학
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• 제6권1호
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• pp.99-112
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• 1993

This study deals with analysis of material from in Tube manufacturing line. This line is a multi product flow ship type production line, which consists of 5 steps of work station. Some work stations involve in unnecessary moving activities of workers and much work in-process storage due to the non-systematic material flow with respect to the different lot size production of multi-items. To improve productivity for this line, one alternative is considered such as grouping two work stations by using GT and JIT concepts. Also, feasibility analysis for this alternative is performed using and simulation model built by SIMAN IV simulation language.

• Steel and Composite Structures
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• 제11권2호
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• pp.115-130
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• 2011

Considering the randomness of material parameters in the laminated composite plate, a scheme of stochastic finite element method to analyze the displacement response variability is suggested. In the formulation we adopted the concept of the weighted integral where the random variable is defined as integration of stochastic field function multiplied by a deterministic function over a finite element. In general the elastic modulus of composite materials has distinct value along an individual axis. Accordingly, we need to assume 5 material parameters as random. The correlations between these random parameters are modeled by means of correlation functions, and the degree of correlation is defined in terms of correlation coefficients. For the verification of the proposed scheme, we employ an independent analysis of Monte Carlo simulation with which statistical results can be obtained. Comparison is made between the proposed scheme and Monte Carlo simulation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• 접착 및 계면
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• 제7권4호
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• pp.18-23
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• 2006

The influence of the notch length on the stress distribution of mid-bondline and adherend was investigated using elasto-plastic finite element method. The results from the simulation showed that peak stress of mid-bondline decreased markedly as adherend with notch in the middle of lap zone, and the stress in the middle of joint with low stress originally increased evidently. All the peak stresses decreased firstly and increased again as the length of notch increased. The relative higher peak stress appeared at the point near the notch of adherend where might be failed previously during the loading procedure.

• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.641-645
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• 2017

In this study, an epoxy insulation barrier for high voltage GIS was developed using epoxy and a filler with a Young's modulus of 11 GPa. The material was investigated using a simulation of the principal stress, displacement, and safety factors while optimizing the profile shape. The simulation showed that thelarger Young's modulus of the $Al_2O_3$ filler compared to the $SiO_2$ in the epoxy insulation can contribute to an increase in resistance to mechanical fracturing for theoptimized profile barrier in high voltage GIS. In addition, the safety factor was improved by 10%. It can be concluded that the mechanical fracturing properties of the insulation barrier can be enhanced by increasing the content of the elastic filler, $Al_2O_3$, for high voltage GIS applications.