• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.40-43
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• 2018

Various Ni-doped carbon (C : Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C : Ni films were investigated. The UBM C : Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C : Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.366-366
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• 2008

Amorphous carbon (a-C) is an interesting materials and its characteristics can be varied by tuning it $sp^3$ fractions. The $sp^3$ fraction in a-C films depends on the kinetic energy of the deposited carbon ions. In this work, a-C films was synthesized on Si(100) and glass substrates at room temperature by closed-field unbalanced magnetron (CFUBM) sputtering with the increase of graphite target power density. The structural and physical properties of films were investigated by using Raman spectroscopy, X-ray photoelectron spectrometer (XPS), nano- indentation, atomic force microscope (AFM) and contact-angle measurement. We obtained the good tribological properties, such as high hardness up to 26 GPa., friction coefficient lower than 0.1 and the smooth surface (rms roughness: 0.12 nm). The increase of the physical properties with the increase of target power density are related to the increase of nano-clusters in the carbon network. Also, these results might be due to the increase of the subplantation and resputtering by the increase of ions density in the plasma.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.11-14
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• 2004

An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.87-90
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• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.34-42
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• 2001

The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.490-497
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• 1996

RF마그네트론 스파터링에 의한 $sSnO_2$ 박막을 증착한 결과 작동조건에 따라 표면에서 막손상이 발생하였는데, 이는 target에서 생성된 높은 에너지의 고속입자가 기판에서 직접 충돌로 일어나며, 마그네트론의 자계분포와도 관계된다. 또한 기판의 위치에 따라 박막의 전기적, 구조적 특성이 급격히 변하는데 본 논문은 중심자석의 세기와 RF power, 가스압력, 그리고 기판온도 등의 스파터링 작동조건을 변화시키면서 박막의 비손상을 검토하였고, 물성특성을 평가하였다. 실험결과로 부터 기판의 외축부에서 제작된 박막은 전반적으로 막손상이 없었고, 특히 target의 중심자석을 Cobalt로 설치하고 15 mTorr의 가스압력과 50 W의 RF power로 한 경우 가장 우수한 특성을 가진 박막을 얻을 수 있었다. 추가로 막손상을 방지하고자, 환원형의 masking glass를 target위에 설치하였는데, 고에너지 입자의 직접 충돌을 확실히 차단할 수 있었으며, 비저항율도 target의 부식부위 (erosion)에 대응하는 부분에서 100배 정도로 개선하였다.

• The Korea Journal of Herbology
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• v.30 no.4
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• pp.45-49
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• 2015

Objectives : Through this study, it would be confirmed that specific expression for efficacy of medicinal material has multiple meanings. And through the methodology to determine the multi meaning, it could be contributed to lighten ambiguous expressions for efficacy of medicinal material.Methods : The premise is that the efficacy and treatment target data are related to each other. Word cloud has been used analyzing the efficacy and treatment target data for medicinal materials. Then classic and modern documents were analyzed by the search.Results : Even though searching all related references as well as comparing the efficacy and treatment target data were done, some medicinal materials having 'Salchung[殺蟲]' as an efficacy are not expected to treat the disease associated with the parasite. Through the analysis of classic and modern documents, it was found that 'Salchung[殺蟲]' is not used only as a means of anthelmintic efficacy. But through the above analysis method some medicinal materials having 'Guchung[驅蟲]' as an efficacy are expected to treat the disease associated with the parasite, and 'Guchung[驅蟲]' seems to be almost used as a means of anthelmintic efficacy.Conclusions : If a certain expression for efficacy of medicinal material is used as a single meaning obviously, ambiguous expressions need to be clear. And if a certain expression for efficacy of medicinal material seems to have multiple meanings, the additional informations are to be supplemented for exact wording.

• Journal of Dairy Science and Biotechnology
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• v.25 no.2
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• pp.5-10
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• 2007

Ultrasonication was employed to prepare solid lipid nanoparticles (SLN) for smart probiotic nanoparticles as a nanofood. The model probiotic material, lactocin from Lactobacillus plantarum (CBT-LP2), was incorporated into SLN. The CBT-LP2 loaded SLN (CBT-LP2-SLN) were spherical in the photograph of scanning electron microscope (SEM). The particle size measured by laser diffraction (LD) was found to be $97.3{\pm}8.2nm$. Zeta potential analyzer suggested the zeta potential of LP-SLN was $-29.36{\pm}3.68$ mV in distilled water. The entrapment efficiency (EE%) was determined with the sephadex gel chromatogram and high-performance liquid chromatogram (HPLC), and up to 90.59% of nanofood was incorporated. Stability evaluation showed relatively long-term stability with only slight particle growth (P>0.05) after storage at room temperature for 4 weeks. Therefore, ultrasonication is demonstrated to be a simple, available and effective method to prepare high quality SLN loaded probiotic material.