• Current Optics and Photonics
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• 제1권3호
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• pp.239-246
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• 2017

A compact plasmonic switching scheme, based on the phase change of a thin-film chalcogenide material ($Ge_2Sb_2Te_5$), is proposed and numerically investigated at optical-communication wavelengths. Surface plasmon polariton modal analysis is conducted for various thicknesses of dielectric and phase-change material layers, and the optimized condition is induced by finding the region of interest that shows a high extinction ratio of surface plasmon polariton modes before and after the phase transition. Full electromagnetic simulations show that multiple reflections inside the active region may conditionally increase the overall efficiency of the on/off ratio at a specific length of the active region. However, it is shown that the optimized geometrical condition, which shows generally large on/off ratio for any length of active region, can be distinguished by observing the multiple-reflection characteristic inside the active region. The proposed scheme shows an on/off switching ratio greater than 30 dB for a length of a few micrometers, which can be potentially applied to integrated active plasmonic systems.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2005년도 동계학술발표대회 논문집
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• pp.193-198
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• 2005

The present experiments have been performed for obtaining the melting heat transfer characteristics of micro-encapsulated solid-liquid phase change material and water mixed slurry flow in a circular tube heated with constant wall heat flux. The phase change material having a low melting point was selected for a domestic cooling system in the present study. The governing parameters were found to be latent heat material concentration, heat flux, and the slurry velocity. The experimental results revealed that the increase of tube wall temperature of latent microcapsule slurry was lower than that of water caused by the heat absorption of fusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• 한국구조물진단유지관리공학회 논문집
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• 제20권4호
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• pp.44-50
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• 2016

본 연구에서는 상변화물질(PCM)을 반강성 포장체를 구성하는 초속경시멘트 페이스트 주입재에 적용하기 위한 연구를 수행하였다. 반강성포장용 주입재의 아크릴레이트를 PCM으로 치환에 따른 총 6종류의 주입재 배합에 대하여 경화 전 후 특성을 실험을 통해 평가하였다. 아크릴레이트를 PCM으로 치환하여 유동성을 평가한 결과 본 연구에서 목표로한 유하시간 10~13초를 모두 만족시킬 수 있는 것으로 나타났다. 응결시간의 경우 PCM으로 치환하더라도 초속경 시멘트의 성능을 확보할 수 있는 것으로 나타났고, PCM 치환 60%이상의 경우 초결시간이 다른 배합에 비해 1~2분 빨리 발생되었다. 압축강도 및 부착강도의 경우 Plain 배합과 유사한 강도특성을 나타내었고, 본 연구에서 목표로 하는 압축강도 36MPa, 부착강도 2MPa를 모두 만족시켰다. PCM으로 치환한 배합은 아크릴레이트만을 사용한 배합에 비해 우수한 염소이온침투저항성을 나타내었으나, OPC수준에는 미흡하였다. 반강성포장용 주입재에 대한 물리 역학적 성능평가 결과, 이 연구의 범위내에서는 PCM 대체율 20% 수준이 효과적인 것으로 판단된다.

• Design & Manufacturing
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• 제15권3호
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• pp.13-18
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• 2021

In plate forming technology, cylindrical drawing process is widely used in industry due to technological development. In this study, we used stainless steel 3042B and stainless steel 304J1, which are the most commonly used materials in the production of cold and hot water tanks for water purifiers, among cylindrical drawing products. Under the same conditions, the thickness of the sidewall of the product formed by drawn experiment was studied. As a result of the experiment, the bottom thickness of stainless steel 304J1 was considered to be thick. It is judged that the defect rate can be reduced by changing the breaking phenomenon of the floor surface of the cold and hot water bottles to the material of stainless steel 304j1. Stainless steel 304 2B material shows a sharp change in thickness from punch corner R to sidewall position, while stainless steel 304J1 material showed a uniform change from punch corner R to sidewall position. Stainless steel 304J1 material is considered to improve the clamping of the product in the process of extracting the product after hand drawing. The appearance of stainless steel 3042B products is considered to produce more wrinkles in the flange, which exerts greater tensile force on the sidewall during molding, resulting in uneven sidewall thickness.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.223-226
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• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• 한국염색가공학회지
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• 제19권1호
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• pp.37-44
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• 2007

In this study, for textile use, the octadecane of phase change materials(PCM) was encapsulated in several micro-diameter shell which prevents leakage of the material during its liquid phase. Microencapsulated PCM(PM) was prepared with the different weight ratio of core material to wall material and by interfacial polymerization methods using polyurea as shell material. Phase stability for O/W emulsion of PCM and PVA aq. (PE) was evaluated by Turbiscan Lab. The capsule formation win identified using FT-IR. Physical properties of microcapsules including diameter, particle distribution, morphology were investigated. Thermal transport properties of suede treated with PM(SPM) were determined by KES-F7 system.

• Journal of Advanced Marine Engineering and Technology
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• 제33권1호
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• pp.131-137
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• 2009

In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

• ETRI Journal
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• 제39권3호
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• pp.390-397
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• 2017

In this paper, we propose a scheme for designing a tunable pixel layer based on a $Ge_2Sb_2Te_5$ (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry-Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first-to-zeroth-order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength-selective type by tuning the dielectric thickness, and we discuss a multi-phase example with a double-stack structure.

• Design & Manufacturing
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• 제14권3호
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• pp.17-22
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• 2020

As devices such as smartphones, tablet PC, and wearable devices have been miniaturized, the connectors that go into the devices are also designed to be very small. The connector combines the plug and the receptacle to transfer electricity. As devices are miniaturized, the contact shape is formed by partially thinning the thickness of the raw material of the terminal in order to lower the coupling height of the plug and receptacle. The product used in this study is a receptacle terminal used for 0.4mm pitch board to board connector among fine pitch connectors. When the material thickness is reduced by forging the receptacle terminal, the width change of the pin is checked. To reduce the thickness of the material by forging, pre-notching is applied in the first step, forging in the second step, and notching in the third step. After forming the width dimension of the pin to 0.28 mm in the pre-notching process, in the forging process, the material thickness 0.08 mm and 0.02 mm (25%) were forged and the thickness was changed to 0.06 mm and the width change amount of the pin was measured. The facility produced 10,000 pieces at 400 SPM using a Yamada Dobby (MXM-40L) press, and thirty pins were measured and the average value was shown. After forging by using C5210-H (HP) and NKT322-EH, which are frequently used in connectors, analyze the amount of change in each material. The effect of punching oil on forging is investigated by appling FM-200M, which is highly viscous, and FL-212, fast drying oil. This study aims to minimize mold modification by predicting the amount of material change after forging.