• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.254-255
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• 2005

In this paper, we investigated electrical characteristics of the X-ray detector of mercuric iodide (HgI2) film fabricated by PIB(Particle-in-Binder) Method on ITO substrates 17cm$\times$20cm in size with thicknesses ranging from approximately 200${\mu}m$ to 240${\mu}m$. In the present study, using I-V measurements, their electrical properties such as leakage current, X-ray sensitivity, and signal-to-noise ratio (SNR),were investigated. The results of our study can be useful in the future design and optimization of direct active-matrix flat-panel detectors (AMFPD) for various digital X-ray imaging modalities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.199-202
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• 1996

This paper describes the thermally stimulated current (TSC) measurements of arachidic acid and polyamic acid alkylamine salt(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 25$0^{\circ}C$ and the temperature was increased at a rate of 0.02 K/s linearly. It shows that peaks of TSC are observed at about 8$0^{\circ}C$ in the arachidic acid and about 8$0^{\circ}C$, 16$0^{\circ}C$ in the PAAS LB films. Results of these measurements indicate that one peak at 8$0^{\circ}C$ is resulted from alkyl group; the other peak at 16$0^{\circ}C$ is due to alkyl and C-O group of PAAS. Additional large peak at about 16$0^{\circ}C$ is due to dipole moments in the PAAS films. The DSC and TGA of PAAS, arachidic acid and octadesylamine are measured. Thermal imidization was performed at 30$0^{\circ}C$ far 1 hour by our pre study

• Proceedings of the Korean Geotechical Society Conference
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• 한국지반공학회 2002년도 봄 학술발표회 논문집
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• pp.149-156
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• 2002

Field measurements were carried out in this study to investigate the behavior of cut and cover tunnel such as the distribution and the magnitude of the earth pressure during back fill process of the ground material. Three kinds of measuring instruments, such as the earth pressure load cell, the concrete strain gauge and the reinforcing bar meter of embedded type in concrete structure were installed and measured. Earth pressure load cells, installed after construction of the tunnel lining, measure the outside forces acting on the tunnel lining with radial directions. Three load cells were installed at the crown, the right and the left shoulder of the tunnel, respectively. Three sets of reinforcing bar meter were installed in the double reinforcements of the tunnel lining and their locations were the same with the position of the earth pressure load cells. Concrete strain gauge was installed only one site of the upper compressive part at the tunnel crown. Based on the measuring results in the field, the deformation and the earth pressure acting on the tunnel lining were investigated with the back fill process of the ground material. Considerations on the validity of the measuring results were paid. For the analysis of measurements, after dividing back fill process into three steps, various factors which affect on the behavior of tunnel lining were investigated at each step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.99-100
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• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Transactions of Materials Processing
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• 제32권6호
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• pp.321-328
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• 2023

To ensure driver safety, high-strength steel pipes are utilized in the chassis and internal structures design of automobiles. ERW(electric resistance welding) pipes, fabricated through welding at joints using electrical resistance, form a Heat-Affected Zone (HAZ) during the welding process. Due to characteristics such as increased hardness and reduced ductility compared to the base material, HAZ poses challenges in finite element analysis (FEA) for pipe shapes. In this study, for FEA considering HAZ properties, mechanical properties were measured through uniaxial tensile testing and digital image correlation (DIC) techniques after specimen fabrication. These measurements were validated using reverse engineering methods. Furthermore, hardness measurements and gaussian functions were employed to ascertain the hardness distribution within the HAZ, serving as a basis for subdividing the HAZ and modeling the pipe shape. To validate the effectiveness of the HAZ modeling approach, models were interpreted incorporating only base material properties and models incorporating average-calculated HAZ properties. Comparative analysis was performed, revealing that the model subdividing the HAZ based on hardness measurements closely approximated experimental values. This validation offered a methodology for HAZ modeling in FEA.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.464-466
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• 1990

A ternary Zintl phase material of the formula $K_2Ga_2Sb_4$ has been prepared directly from reaction of the elements following a high temperature procedure. The compound consists of potassium ions and planar ribbons of $(Ga_2Sb_4^{-2})_{\infty}$ consisting of five membered $[Ga_2Sb_3]$ rings bridged by Sb atoms. The variable temperature specific resistivity measurements show the material to be an intrinsic semiconductor.

• Journal of Advanced Marine Engineering and Technology
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• 제28권6호
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• pp.962-971
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• 2004

This paper has dealt with thermo-physical properties of microencapsulated phase change material slurry as a latent heat storage material having a low melting point. The measured results of the thermo-physical properties of the test microencapsulated phase change material slurry, those are, density, specific heat, thermal conductivity and viscosity, were discussed for the temperature region of solid and liquid phases of the dispersion material (paraffin). The measurements of these properties of microencapsulated phase change material slurry have been carried out by using a specific-gravity meter, a water calorimeter, a differential scanning calorimeter(DSC), a transient hot wire method and rotating type viscometer, respectively. It was clarified that the additional properties law could be applied to the estimation of the density and specific heat of microencapsulated phase change material slurry and also the Euckens equation could be applied to the estimation of the thermal conductivity of this slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권6호
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• pp.467-471
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• 2000

The thermal annealing effect of $Zn_{0.9}Cd_{0.1}$ single quantum-well structures grown by molecular beam epitaxy is investigated. As the results of before and after rapid thermal annealed samples a red shift of E1-HH1 peak by Cd interdiffusion during thermal annealing of ZnCeSe/ZnSe sample was observed. In the case of annealed sample over $450^{\circ}C$ donor and acceptor impurities related peaks were observed which seems to be due to a diffusion of Ga and As from GaAs substrate. And also interdiffusion phenomena is idenified by the results of DCX measurements and which are consisten with the PL measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제18권2호
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• pp.109-115
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• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.195-198
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• 1996

In conducting systems based on LB films, TCNQ derivatives have been extensively studied as electron acceptor molecules. We have investigated the optical, electrical, and magnetic properties of Viologen-(TCNQ￣)$_2$LB films. In UV/visible absorption measurements, we have observed TCNQ￣ peak at 380 nm and dimer peak at 620 nm. The electron spin resonance measurements infer that Viologen-(TCNQ￣)$_2$LB film exhibits anisotropic properly. In other words, the LB film shows angular dependence. Iodine doping affects the degree of charge transfer and the conductivity of the films. The UV/visible absorption spectra of the LB film doped with I$_2$show peaks at near 400~430 nm and there is no dimer absorption peak. The in-plane electrical conductivity of the undoped film is approximately 4.2$\times$10$^{-6}$ S/cm.